DIODES INCORPORATED DMN10H220L-13 | Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 800mW; SOT23
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Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| DMN10H220L-13 | 1 | 1 | |||
| Digi-Key | 8545751 | 1 | 1 | 10000 @ $0.16 | |
| iodParts | DMN10H220L-13 | 10000 | 370000 | 10000 | 10000 @ $0.12 |
| Hotenda | H1829561 | 1 | 1 | ||
| Future Electronics | 6075332 | 10000 | 10000 | 10000 @ $0.08 |
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DIODES DMN10H220L-13 Single N-Channel 100 V 250 mOhm 4.1 nC 1.3 W Silicon SMT Mosfet - SOT-23 - 100 item(s)
Brand: DIODES
Single N-Channel 100 V 250 mOhm 4.1 nC 1.3 W Silicon SMT Mosfet - SOT-23 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Listing
| Product group | BISS |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Model | DMN10H220L-13 |
| Part number | DMN10H220L-13 |
| Items per pack | 100 |
| Label | DIODES |
| Manufacturer | DIODES |
DIODES DMN10H220L-13 Single N-Channel 100 V 250 mOhm 4.1 nC 1.3 W Silicon SMT Mosfet - SOT-23 - 10000 item(s)
Brand: DIODES
Single N-Channel 100 V 250 mOhm 4.1 nC 1.3 W Silicon SMT Mosfet - SOT-23 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
- ChannelType: N-Ch
- LowInputCapacitance: 401 pF
- Noofchannels: 1
- VoltageDraintoSource: 100 V
- Drain-sourceOnResistance-Max: 250 m?RatedPowerDissipation(P): 1.3 W; QgGateCharge: 4.1 nC; GateSourceVoltageMax: 16 V; DrainCurrent-Max(ID): 1.6 A; Turn-onTime-Nom(ton): 6.8 ns; Turn-offTime-Nom(toff): 7.9 ns; RiseTIme: 8.2 ns; FallTime: 3
Listing
| Product group | BISS |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Model | DMN10H220L-13 |
| Part number | DMN10H220L-13 |
| Items per pack | 10000 |
| Label | DIODES |
| Manufacturer | DIODES |