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DIODES INCORPORATED DMN10H220L-13 | Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 800mW; SOT23

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Attributes

Brand name, Manufacturer name, Attribute00DIODES INCORPORATED
ManufacturerDIODES INCORPORATED DIODES
Attribute01N-MOSFET
Attribute02unipolar
Attribute03100V
Attribute041.3A
Attribute058A
Attribute06800mW
Attribute07SOT23
Attribute08?16V
Attribute09250m?
Attribute10SMD
Attribute118.3nC
Attribute12reel,
Attribute13enhanced
AttributeKey00Manufacturer
AttributeKey01Type of transistor
AttributeKey02Polarisation
AttributeKey03Drain-source voltage
AttributeKey04Drain current
AttributeKey05Pulsed drain current
AttributeKey06Power dissipation
AttributeKey07Case
AttributeKey08Gate-source voltage
AttributeKey09On-state resistance
AttributeKey10Mounting
AttributeKey11Gate charge
AttributeKey12Kind of package
AttributeKey13Kind of channel
CategoryL1Semiconductors
CategoryL2Transistors
CategoryL3Unipolar transistors
CategoryL4N channel transistors
Extra Product NameDIODES INCORPORATED DMN10H220L-13 | Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 800mW; SOT23
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snippetDIODES INCORPORATED DMN10H220L-13 | Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 800mW; SOT2
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AdultProduct, Autographed, Memorabilia, TradeInEligibleFalse
Brand, Label, Publisher, StudioDIODES
Bullet_pointChannelType: N-Ch Drain-sourceOnResistance-Max: 250 m?RatedPowerDissipation(P): 1.3 W; QgGateCharge: 4.1 nC; GateSourceVoltageMax: 16 V; DrainCurrent-Max(ID): 1.6 A; Turn-onTime-Nom(ton): 6.8 ns; Turn-offTime-Nom(toff): 7.9 ns; RiseTIme: 8.2 ns; FallTime: 3 LowInputCapacitance: 401 pF Noofchannels: 1 VoltageDraintoSource: 100 V
ClassificationId306919011
DisplayNameMOSFET
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ItemName, Item_name, TitleDIODES DMN10H220L-13 Single N-Channel 100 V 250 mOhm 4.1 nC 1.3 W Silicon SMT Mosfet - SOT-23 - 100 item(s) DIODES DMN10H220L-13 Single N-Channel 100 V 250 mOhm 4.1 nC 1.3 W Silicon SMT Mosfet - SOT-23 - 10000 item(s)
Item_type_keywordmosfet-transistors
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Product_descriptionSingle N-Channel 100 V 250 mOhm 4.1 nC 1.3 W Silicon SMT Mosfet - SOT-23 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Product_site_launch_date2018-04-06T17:03:14.569Z 2018-04-18T17:12:20.654Z
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Distributor offers

SellerSKUMOQIn stockMultiplePrices
TMEDMN10H220L-1311
Digi-Key85457511110000 @ $0.16
iodPartsDMN10H220L-13100003700001000010000 @ $0.12
HotendaH182956111
Future Electronics6075332100001000010000 @ $0.08

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DIODES DMN10H220L-13 Single N-Channel 100 V 250 mOhm 4.1 nC 1.3 W Silicon SMT Mosfet - SOT-23 - 100 item(s)
Brand: DIODES
Single N-Channel 100 V 250 mOhm 4.1 nC 1.3 W Silicon SMT Mosfet - SOT-23 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Listing
Product groupBISS
Product typeELECTRONIC_COMPONENT
ModelDMN10H220L-13
Part numberDMN10H220L-13
Items per pack100
LabelDIODES
ManufacturerDIODES
View on Amazon (paid link)
DIODES DMN10H220L-13 Single N-Channel 100 V 250 mOhm 4.1 nC 1.3 W Silicon SMT Mosfet - SOT-23 - 10000 item(s)
Brand: DIODES
Single N-Channel 100 V 250 mOhm 4.1 nC 1.3 W Silicon SMT Mosfet - SOT-23 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
  • ChannelType: N-Ch
  • LowInputCapacitance: 401 pF
  • Noofchannels: 1
  • VoltageDraintoSource: 100 V
  • Drain-sourceOnResistance-Max: 250 m?RatedPowerDissipation(P): 1.3 W; QgGateCharge: 4.1 nC; GateSourceVoltageMax: 16 V; DrainCurrent-Max(ID): 1.6 A; Turn-onTime-Nom(ton): 6.8 ns; Turn-offTime-Nom(toff): 7.9 ns; RiseTIme: 8.2 ns; FallTime: 3
Listing
Product groupBISS
Product typeELECTRONIC_COMPONENT
ModelDMN10H220L-13
Part numberDMN10H220L-13
Items per pack10000
LabelDIODES
ManufacturerDIODES
View on Amazon (paid link)