Stmicroelectronics Power Mosfet, N Channel, 5 A, 600 V, 0.84 Ohm, 10 V, 3 V Rohs Compliant: Yes - STF7NM60N
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Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
![]() Newark | 94T3406 | 1 | 761 | 1 | 1 @ $2.06, 10 @ $1.85, 100 @ $1.59, 500 @ $1.38, 1000 @ $1.18, 2500 @ $0.95, 10000 @ $0.90 |
| JT25-STF7NM60N | 1 | 54600 | 1 | ||
| STF7NM60N | 1 | -2 | 1 | 1 @ $2.05, 10 @ $1.78, 25 @ $1.74, 100 @ $1.51, 250 @ $1.48, 500 @ $1.39 | |
| STF7NM60N | 1 | 1 | |||
![]() Digi-Key | 2294984 | 1 | 849 | 1 | 1 @ $3.43, 10 @ $3.08, 100 @ $2.52, 500 @ $2.15, 1000 @ $1.81, 2000 @ $1.72, 5000 @ $1.65 |
| RS Delivers | 761-2843 | 1 | 20 | 1 | 1 @ $1.46 |
| Win Source | STF7NM60N | 1 | 18028 | 1 | |
| Hotenda | H1828213 | 1 | 19 | 1 | 1 @ $2.48, 10 @ $2.23, 100 @ $1.79, 500 @ $1.47 |
| Future Electronics | 2033886 | 1 | 1 | 1 @ $2.47, 50 @ $2.27, 300 @ $1.93 |
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MOSFET N-Ch 600 V 4.7 A MDmesh 2nd Gen (10 pieces)
Brand: STMicroelectronics
Catalog
| Feature | Manufacturer: STMicroelectronics Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 600 V Continuous Drain Current: 5 A Drain-Source On Resistance: 900 mOhms Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package / Case: TO-220FP Packaging: Tube Gate Charge Qg: 12 nC Power Dissipation: 20 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | STF7NM60N |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | STMicroelectronics |
MOSFET N-Ch 600 V 4.7 A MDmesh 2nd Gen (100 pieces)
Brand: STMicroelectronics
Catalog
| Feature | Manufacturer: STMicroelectronics Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 600 V Continuous Drain Current: 5 A Drain-Source On Resistance: 900 mOhms Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package / Case: TO-220FP Packaging: Tube Gate Charge Qg: 12 nC Power Dissipation: 20 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | STF7NM60N |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | STMicroelectronics |
MOSFET N-Ch 600 V 4.7 A MDmesh 2nd Gen (5 pieces)
Brand: STMicroelectronics
Catalog
| Feature | Manufacturer: STMicroelectronics Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 600 V Continuous Drain Current: 5 A Drain-Source On Resistance: 900 mOhms Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package / Case: TO-220FP Packaging: Tube Gate Charge Qg: 12 nC Power Dissipation: 20 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | STF7NM60N |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | STMicroelectronics |
MOSFET N-Ch 600 V 4.7 A MDmesh 2nd Gen (50 pieces)
Brand: STMicroelectronics
Catalog
| Feature | Manufacturer: STMicroelectronics Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 600 V Continuous Drain Current: 5 A Drain-Source On Resistance: 900 mOhms Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package / Case: TO-220FP Packaging: Tube Gate Charge Qg: 12 nC Power Dissipation: 20 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | STF7NM60N |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | STMicroelectronics |
MOSFET N-Ch 600 V 4.7 A MDmesh 2nd Gen (500 pieces)
Brand: STMicroelectronics
Catalog
| Feature | Manufacturer: STMicroelectronics Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 600 V Continuous Drain Current: 5 A Drain-Source On Resistance: 900 mOhms Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package / Case: TO-220FP Packaging: Tube Gate Charge Qg: 12 nC Power Dissipation: 20 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | STF7NM60N |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | STMicroelectronics |
MOSFET N-Ch 600 V 4.7 A MDmesh 2nd Gen (1 piece)
Listing
| Product group | BISS |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Part number | STF7NM60N |
| Label | STMicroelectronics |
| Manufacturer | STMicroelectronics |
Catalog
| Category | Industrial & Scientific |
|---|---|
| MPN | STF7NM60N |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | STMicroelectronics |
MOSFET N-Ch 600 V 4.7 A MDmesh 2nd Gen
Brand: STMicroelectronics
Catalog
| Feature | Manufacturer: STMicroelectronics Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 600 V Continuous Drain Current: 5 A Drain-Source On Resistance: 900 mOhms Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package / Case: TO-220FP Packaging: Tube Gate Charge Qg: 12 nC Power Dissipation: 20 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | STF7NM60N |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | STMicroelectronics |
ST MICROELECTRONICS STF7NM60N N-Channel 600 V 0.9 ? MDmesh Power MOSFET - TO-220FP - 5 item(s)
Brand: STMicroelectronics
N-Channel 600 V 0.9 ? MDmesh Power MOSFET - TO-220FP ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
- ChannelType: N-Channel
- VoltageDraintoSource: 600 V
- Drain-sourceOnResistance-Max: 900 mΩ
- QgGateCharge: 14 nC
- RatedPowerDissipation(P): 20 W
Listing
| Product group | BISS |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Model | STF7NM60N |
| Part number | STF7NM60N |
| Items per pack | 5 |
| Label | ST MICROELECTRONICS |
| Manufacturer | ST MICROELECTRONICS |
Catalog
| Feature | ChannelType: N-Channel |
|---|---|
| Category | Industrial & Scientific |
| MPN | STF7NM60N |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | ST MICROELECTRONICS |
