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IXFN300N10P IXYS Transistors - Jotrin Electronics

IXYS Corporation . IXFN300N10P

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Attributes

Brand name, Manufacturer nameIXYS Corporation
ManufacturerIXYS Corporation IXYS
Attribute00SOT-227
Attribute01MOSFET
Attribute02Rohs
Attribute03, qtyInStock1000
Attribute04Active
Attribute05Tube
Attribute06Chassis
Attribute07SOT-227-4
AttributeKey00Package/Case
AttributeKey01Product Categories
AttributeKey02RoHs Status
AttributeKey03In-stock
AttributeKey04Product Lifecycle Status
AttributeKey05Packaging
AttributeKey06Mounting Style
AttributeKey07Case/Package
Extra Product NameIXFN300N10P IXYS Transistors - Jotrin Electronics
keywordsIXFN300N10P,IXYS,SOT-227,MOSFET,IXFN300N10P Datasheet PDF
moq, multiple, Case, PackageQuantity1
MPN, Part Number, PartNumberIXFN300N10P
SKUJT25-IXFN300N10P
snippetBuy IXFN300N10P IXYS , Learn more about IXFN300N10P MOSFET Polar Power MOSFET HiPerFET, View the manufacturer, and stock, and datasheet pdf for the IXFN300N10P at Jotrin Electronics.
Product Group, ProductGroupBISS
AsinB00MEJSCX2
Brand, Label, Man, Publisher, StudioIXYS
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 747-IXFN300N10P
FeatureManufacturer: IXYS Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 295 A Rds On - Drain-Source Resistance: 5.5 mOhms Vgs th - Gate-Source Threshold Voltage: 5 V Qg - Gate Charge: 279 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 1.07 kW
ProductTypeNameELECTRONIC_COMPONENT
TitleMOSFET Polar Power MOSFET HiPerFET

Distributor offers

SellerSKUMOQIn stockMultiplePrices
jotrin.comJT25-IXFN300N10P110001
TMEIXFN300N10P111 @ $50.66, 3 @ $44.77, 10 @ $40.27
Digi-Key2184785100101001 @ $45.94, 10 @ $42.86, 100 @ $37.21
i-componentsIXFN300N10P1027441010 @ $11.65
Win SourceIXFN300N10P1571
HotendaH180300911

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MOSFET Polar Power MOSFET HiPerFET
Brand: IXYS
Catalog
FeatureManufacturer: IXYS Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 295 A Rds On - Drain-Source Resistance: 5.5 mOhms Vgs th - Gate-Source Threshold Voltage: 5 V Qg - Gate Charge: 279 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 1.07 kW
CategoryIndustrial & Scientific
MPNIXFN300N10P
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerIXYS
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