NEXPERIA . BUK9Y29-40E,115
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 45W7288 | 1 | 1 | ||
| RS Delivers | 153-2815 | 1 | 1 | 1 @ $0.38 | |
| Digi-Key | 4486658 | 1 | 1 | 1 @ $0.75, 10 @ $0.66, 100 @ $0.50, 500 @ $0.40 | |
| Amazon | B077BCXR1W | 1 | 1 | ||
| Radwell | BUK9Y29-40E,115 | 5 | 5 | 1 @ $0.33 | |
| Hotenda | H1811813 | 1 | 39000 | 1 | 1 @ $0.21 |
| Digi-Key | 568-10977-1-ND | 1 | 1 | 1 @ $0.54, 10 @ $0.47, 100 @ $0.35, 500 @ $0.27 |
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MOSFET N-channel 40 V 29 mo FET (10 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 40 V Vgs - Gate-Source Breakdown Voltage: +/- 10 V Id - Continuous Drain Current: 25 A Rds On - Drain-Source Resistance: 25.8 mOhms Configuration: Triple Common Source Vgs th - Gate-Source Threshold Voltage: 1.7 V Qg - Gate Charge: 5 nC Maximum Operating Temperature: + 175 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | BUK9Y29-40E,115 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET N-channel 40 V 29 mo FET (100 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 40 V Vgs - Gate-Source Breakdown Voltage: +/- 10 V Id - Continuous Drain Current: 25 A Rds On - Drain-Source Resistance: 25.8 mOhms Configuration: Triple Common Source Vgs th - Gate-Source Threshold Voltage: 1.7 V Qg - Gate Charge: 5 nC Maximum Operating Temperature: + 175 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | BUK9Y29-40E,115 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET N-channel 40 V 29 mo FET (5 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 40 V Vgs - Gate-Source Breakdown Voltage: +/- 10 V Id - Continuous Drain Current: 25 A Rds On - Drain-Source Resistance: 25.8 mOhms Configuration: Triple Common Source Vgs th - Gate-Source Threshold Voltage: 1.7 V Qg - Gate Charge: 5 nC Maximum Operating Temperature: + 175 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | BUK9Y29-40E,115 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET N-channel 40 V 29 mo FET (50 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 40 V Vgs - Gate-Source Breakdown Voltage: +/- 10 V Id - Continuous Drain Current: 25 A Rds On - Drain-Source Resistance: 25.8 mOhms Configuration: Triple Common Source Vgs th - Gate-Source Threshold Voltage: 1.7 V Qg - Gate Charge: 5 nC Maximum Operating Temperature: + 175 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | BUK9Y29-40E,115 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET N-channel 40 V 29 mo FET (1 piece)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 40 V Vgs - Gate-Source Breakdown Voltage: +/- 10 V Id - Continuous Drain Current: 25 A Rds On - Drain-Source Resistance: 25.8 mOhms Configuration: Triple Common Source Vgs th - Gate-Source Threshold Voltage: 1.7 V Qg - Gate Charge: 5 nC Maximum Operating Temperature: + 175 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | BUK9Y29-40E,115 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
NEXPERIA BUK9Y29-40E,115 N-Channel 40 V 29 mOhm Surface Mount Logic Level Mosfet - LFPAK56 - 1500 item(s)
Brand: NEXPERIA
N-Channel 40 V 29 mOhm Surface Mount Logic Level Mosfet - LFPAK56 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
- ChannelType: N-Channel
- VoltageDraintoSource: 40 V
- Drain-sourceOnResistance-Max: 25 m?
- QgGateCharge: 5 nC
- RatedPowerDissipation(P): 37 W
Listing
| Binding | Electronics |
|---|---|
| Product group | BISS |
| Product type | CONSUMER_ELECTRONICS |
| Model | BUK9Y29-40E,115 |
| Part number | BUK9Y29-40E,115 |
| Items per pack | 1500 |
| Label | NEXPERIA |
| Manufacturer | NEXPERIA |
Catalog
| Feature | ChannelType: N-Channel |
|---|---|
| Category | Industrial & Scientific |
| MPN | BUK9Y29-40E,115 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NEXPERIA |