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RN1111MFV SemiConductor - CASE: SOT623F MAKE: Toshiba

Toshiba . RN1111MFV

Attributes

Brand name, Manufacturer name, Manufacturer, Attribute00Toshiba
Attribute01SOT623F
Attribute02Transistor Silicon Pre-Biased-NPN
Attribute03Pre-Biased-NPN
Attribute040.15 W
Attribute05, Attribute0650 V
Attribute075 V
Attribute080.1 A
Attribute09150 ?C
Attribute100.7 pF
Attribute11120
Attribute12XM
Attribute1310 kOhm
Attribute14586451
AttributeKey00Manufacturer
AttributeKey01Case
AttributeKey02Type
AttributeKey03Polarity
AttributeKey04Maximum Collector Power Dissipation (Pc)
AttributeKey05Maximum Collector-Base Voltage |Vcb|
AttributeKey06Maximum Collector-Emitter Voltage |Vce|
AttributeKey07Maximum Emitter-Base Voltage |Veb|
AttributeKey08Maximum Collector Current |Ic max|
AttributeKey09Max. Operating Junction Temperature (Tj)
AttributeKey10Collector Capacitance (Cc)
AttributeKey11Forward Current Transfer Ratio (hFE), MIN
AttributeKey12SMD Transistor Code
AttributeKey13Built in Bias Resistor R1
AttributeKey14SKU
keywordsBuy RN1111MFV, RN1111MFV, RN1111MFV SemiConductor
moq, multiple1
MPN, SKURN1111MFV
originalCurrency{'currency': 'GBP'}
qtyInStock0
snippetRN1111MFV SemiConductor - CASE: SOT623F MAKE: Toshiba

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Little DiodeRN1111MFV11
Win SourceRN1111MFV13920001