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Ixys Semiconductor Mosfet, N, Isoplus247 - IXFR36N60P

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Attributes

Brand name, Manufacturer nameIXYS SEMICONDUCTOR
ManufacturerIXYS SEMICONDUCTOR IXYS
CategoryL1Semiconductors - Discretes
CategoryL2FETs
CategoryL3Single MOSFETs
Extra Product NameIxys Semiconductor Mosfet, N, Isoplus247 - IXFR36N60P
jsonUrlDataSemiconductors - Discretes > FETs > Single MOSFETs
moq, multiple, tierMinQty1, Case, PackageQuantity1
MPN, Part Number, PartNumberIXFR36N60P
qtyInStock112
SKU24M3022
tierMinQty210
tierMinQty325
tierMinQty460
tierMinQty5120
tierMinQty6270
tierMinQty7510
tierPrice115.23
tierPrice213.42
tierPrice313.24
tierPrice413.05
tierPrice512.33
tierPrice611.61
tierPrice711.24
urlhttps://www.newark.com/24M3022?CMP=AFC-DATAALCHEMY
Product Group, ProductGroupBISS
AsinB00MEJDAFW
Brand, Label, Man, Publisher, StudioIXYS
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 747-IXFR36N60P
FeatureManufacturer: IXYS Product Category: Power MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: +/- 30 V Id - Continuous Drain Current: 20 A Rds On - Drain-Source Resistance: 200 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 208 W Mounting Style: SMD/SMT Package / Case: ISOPLUS 247-3
ProductTypeNameELECTRONIC_COMPONENT
TitleMOSFET 600V 20A

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SellerSKUMOQIn stockMultiplePrices
Newark24M3022111211 @ $15.23, 10 @ $13.42, 25 @ $13.24, 60 @ $13.05, 120 @ $12.33, 270 @ $11.61, 510 @ $11.24
Little DiodeIXFR36N60P111 @ $29.71
TMEIXFR36N60P111 @ $14.91, 3 @ $13.42, 10 @ $11.82, 30 @ $10.65
Digi-Key116576810003010001 @ $13.56, 10 @ $12.46, 100 @ $10.52, 500 @ $9.36, 1000 @ $8.80
RadwellIXFR36N60P111 @ $20.00
Win SourceIXFR36N60P11051
HotendaH1814617130411 @ $11.60, 10 @ $10.44, 25 @ $9.51, 100 @ $8.58, 250 @ $7.89, 500 @ $7.19
Future Electronics8025368606060 @ $8.92, 60 @ $7.67

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MOSFET 600V 20A
Brand: IXYS
Catalog
FeatureManufacturer: IXYS Product Category: Power MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: +/- 30 V Id - Continuous Drain Current: 20 A Rds On - Drain-Source Resistance: 200 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 208 W Mounting Style: SMD/SMT Package / Case: ISOPLUS 247-3
CategoryIndustrial & Scientific
MPNIXFR36N60P
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerIXYS
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