Vishay N-Channel 30-V (D-S) Mosfet Rohs Compliant: Yes - SIR402DP-T1-GE3
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 09P2630 | 3000 | 3000 | 2000 @ $0.93, 4000 @ $0.84, 6000 @ $0.81, 10000 @ $0.78 | |
 Radwell | SIR402DP-T1-GE3 | 3000 | 3000 | ||
| 1Source | SIR402DP-T1-GE3 | 1 | 1 | ||
| Digi-Key | 1978965 | 1 | 1 | 3000 @ $1.16 | |
 swatee.com | SIR402DP-T1-GE3 | 1 | 1931 | 1 | 1 @ $4.63 |
| Win Source | SIR402DP-T1-GE3 | 220 | 95215 | 220 | 220 @ $0.23, 555 @ $0.18, 1 @ $0.16 |
| Hotenda | H1809987 | 1 | 1 | 1 @ $0.82 | |
| Future Electronics | 2550036 | 3000 | 3000 | 3000 @ $0.78 |
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MOSFET 30V 35A 36W 6.0mohm @ 10V (10 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 35 A Rds On - Drain-Source Resistance: 6.4 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 4.2 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | SIR402DP-T1-GE3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET 30V 35A 36W 6.0mohm @ 10V (100 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 35 A Rds On - Drain-Source Resistance: 6.4 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 4.2 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | SIR402DP-T1-GE3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET 30V 35A 36W 6.0mohm @ 10V (5 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 35 A Rds On - Drain-Source Resistance: 6.4 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 4.2 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | SIR402DP-T1-GE3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET 30V 35A 36W 6.0mohm @ 10V (50 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 35 A Rds On - Drain-Source Resistance: 6.4 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 4.2 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | SIR402DP-T1-GE3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET 30V 35A 36W 6.0mohm @ 10V (500 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 35 A Rds On - Drain-Source Resistance: 6.4 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 4.2 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | SIR402DP-T1-GE3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET 30V 35A 36W 6.0mohm @ 10V (1 piece)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 35 A Rds On - Drain-Source Resistance: 6.4 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 4.2 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | SIR402DP-T1-GE3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |