ON SEMICONDUCTOR . NVD5807NT4G
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 14AC4786 | 1 | 1 | ||
| Digi-Key | 13524985 | 1 | 1 | ||
 swatee.com | NVD5807NT4G | 1 | 1066 | 1 | 1 @ $1.10 |
| Hotenda | H1831740 | 1 | 1 | 1 @ $0.23 |
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MOSFET POWER MOSFET
Brand: ON Semiconductor
Catalog
| Feature | Manufacturer: ON Semiconductor Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 40 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 23 A Rds On - Drain-Source Resistance: 20 mOhms Configuration: Single Qg - Gate Charge: 12.6 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 33 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | NVD5807NT4G |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | ON Semiconductor |