VISHAY . SI9933CDY-T1-E3

DUAL P CHANNEL MOSFET, -20V, SOIC; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.048ohm; Rds(on) Test Voltage Vgs:12V; Threshold Voltage Vgs:1.4V RoHS Compliant: Yes

VISHAY SILICONIX SI9933CDY-T1-E3 DUAL P CHANNEL MOSFET, -20V, SOIC

Si9933CDY Series Dual P-Channel 20 V 58 mOhm Surface Mount Power Mosfet - SOIC-8 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****

EU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Dual Dual Drain Process Technology: TrenchFET Channel Mode: Enhancement Channel Type: P Number of Elements per Chip: 2 Maximum Drain Source Voltage (V): 20 Maximum Gate Source Voltage (V): ±12 Maximum Gate Threshold Voltage (V): 1.5 Maximum Continuous Drain Current (A): 4 Maximum Drain Source Resistance (mOhm): 58@4V Typical Gate Charge @ Vgs (nC): 17@10V|8@4.5V Typical Gate Charge @ 10V (nC): 17 Typical Gate to Drain Charge (nC): 1.7 Typical Gate to Source Charge (nC): 2.5 Typical Reverse Recovery Charge (nC): 10 Typical Input Capacitance @ Vds (pF): 665@10V Typical Output Capacitance (pF): 220 Maximum Power Dissipation (mW): 2000 Typical Fall Time (ns): 13 Typical Rise Time (ns): 50 Typical Turn-Off Delay Time (ns): 29 Typical Turn-On Delay Time (ns): 21 Minimum Operating Temperature (°C): -50 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Supplier Package: SOIC N Pin Count: 8 Standard Package Name: SOP Mounting: Surface Mount Package Height: 1.55(Max) Package Length: 5(Max) Package Width: 4(Max) PCB changed: 8 Lead Shape: Gull-wing