Vishay P-Channel 20-V (D-S) Mosfet Rohs Compliant: Yes - SI8817DB-T2-E1
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 99W9645 | 3000 | 3000 | 1 @ $0.18, 5000 @ $0.18, 10000 @ $0.16, 20000 @ $0.15, 30000 @ $0.14, 50000 @ $0.14 | |
| Digi-Key | 3679998 | 1 | 1 | 1 @ $0.47, 10 @ $0.40, 100 @ $0.30, 500 @ $0.24, 1000 @ $0.18, 3000 @ $0.17 | |
| Digi-Key | 3679974 | 1000 | 300 | 1000 | 1 @ $0.49, 10 @ $0.42, 100 @ $0.32, 500 @ $0.25, 1000 @ $0.19 |
| iodParts | SI8817DB-T2-E1 | 1 | 30000 | 1 | |
| Hotenda | H1811404 | 1 | 3000 | 1 | 1 @ $0.15 |
| Future Electronics | 7028410 | 3000 | 3000 | 3000 @ $0.18, 6000 @ $0.15 |
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MOSFET -20V 76mOhm@4.5V 2.9A P-Ch G-III (10 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: P-Channel MOSFETs RoHS: Transistor Polarity: P-Channel Vds - Drain-Source Breakdown Voltage: - 20 V Vgs - Gate-Source Breakdown Voltage: 8 V Id - Continuous Drain Current: - 2.9 A Rds On - Drain-Source Resistance: 76 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: - 1 V Qg - Gate Charge: 7.5 nC Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI8817DB-T2-E1 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET -20V 76mOhm@4.5V 2.9A P-Ch G-III (100 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: P-Channel MOSFETs RoHS: Transistor Polarity: P-Channel Vds - Drain-Source Breakdown Voltage: - 20 V Vgs - Gate-Source Breakdown Voltage: 8 V Id - Continuous Drain Current: - 2.9 A Rds On - Drain-Source Resistance: 76 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: - 1 V Qg - Gate Charge: 7.5 nC Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI8817DB-T2-E1 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET -20V 76mOhm@4.5V 2.9A P-Ch G-III (5 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: P-Channel MOSFETs RoHS: Transistor Polarity: P-Channel Vds - Drain-Source Breakdown Voltage: - 20 V Vgs - Gate-Source Breakdown Voltage: 8 V Id - Continuous Drain Current: - 2.9 A Rds On - Drain-Source Resistance: 76 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: - 1 V Qg - Gate Charge: 7.5 nC Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI8817DB-T2-E1 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET -20V 76mOhm@4.5V 2.9A P-Ch G-III (50 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: P-Channel MOSFETs RoHS: Transistor Polarity: P-Channel Vds - Drain-Source Breakdown Voltage: - 20 V Vgs - Gate-Source Breakdown Voltage: 8 V Id - Continuous Drain Current: - 2.9 A Rds On - Drain-Source Resistance: 76 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: - 1 V Qg - Gate Charge: 7.5 nC Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI8817DB-T2-E1 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET -20V 76mOhm@4.5V 2.9A P-Ch G-III (1 piece)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: P-Channel MOSFETs RoHS: Transistor Polarity: P-Channel Vds - Drain-Source Breakdown Voltage: - 20 V Vgs - Gate-Source Breakdown Voltage: 8 V Id - Continuous Drain Current: - 2.9 A Rds On - Drain-Source Resistance: 76 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: - 1 V Qg - Gate Charge: 7.5 nC Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI8817DB-T2-E1 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
SI8817DB-T2-E1, Trans MOSFET P-CH 20V 2.9A 4-Pin Micro Foot T/R (250 Items)
Brand: Vishay
EU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.21.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Dual Source Process Technology: TrenchFET Channel Mode: Enhancement Channel Type: P Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 20 Maximum Gate Source Voltage (V): ±8 Maximum Gate Threshold Voltage (V): 1 Maximum Continuous Drain Current (A): 2.9 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 1 Maximum Drain Source Resistance (mOhm): 76@4.5V Typical Gate Charge @ Vgs (nC): 12.5@8V|7.5@4.5V Typical Input Capacitance @ Vds (pF): 615@10V Maximum Power Dissipation (mW): 900 Typical Fall Time (ns): 22|23 Typical Rise Time (ns): 20|10 Typical Turn-Off Delay Time (ns): 52|60 Typical Turn-On Delay Time (ns): 20|6 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Supplier Package: Micro Foot Pin Count: 4 Standard Package Name: BGA Mounting: Surface Mount Package Height: 0.2 Package Length: 0.8 Package Width: 0.8 PCB changed: 4 Lead Shape: Ball
SI8817DB-T2-E1, Trans MOSFET P-CH 20V 2.9A 4-Pin Micro Foot T/R (250 Items)
Brand: Vishay
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Model | SI8817DB-T2-E1 |
| Part number | SI8817DB-T2-E1 |
| Items per pack | 250 |
| Label | Vishay |
| Manufacturer | Vishay |