Nexperia Mosfet, N-Ch, 30V, 100A, Lfpak56 Rohs Compliant: Yes - PSMN2R6-30YLC,115
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Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
![]() Newark | 74AH1196 | 1 | 428 | 1 | 1 @ $0.74, 10 @ $0.61, 25 @ $0.58, 50 @ $0.55, 100 @ $0.51, 250 @ $0.49, 500 @ $0.47, 1000 @ $0.47 |
| TME | PSMN2R6-30YLC.115 | 1 | 1 | 1 @ $1.15, 5 @ $1.05, 25 @ $0.92, 100 @ $0.83, 500 @ $0.77 | |
| Digi-Key | 2675463 | 1 | 353 | 1 | 1 @ $1.29, 10 @ $1.15, 100 @ $0.90, 500 @ $0.74, 1500 @ $0.59, 3000 @ $0.55 |
| Digi-Key | 10480887 | 971 | 971 | 971 @ $0.26 | |
![]() swatee.com | PSMN2R6-30YLC,115 | 1 | 1046 | 1 | 1 @ $1.67 |
| iodParts | PSMN2R6-30YLC,115 | 1 | 2019 | 1 | |
| Win Source | PSMN2R6-30YLC,115 | 1 | 9342 | 1 | |
| Hotenda | H1816048 | 1 | 1 | 1 @ $0.37 |
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MOSFET N-Ch 30V 2.8mOhms (10 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 100 A Rds On - Drain-Source Resistance: 2.8 mOhms Vgs th - Gate-Source Threshold Voltage: 1.54 V Qg - Gate Charge: 39 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 106 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | PSMN2R6-30YLC,115 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET N-Ch 30V 2.8mOhms (100 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 100 A Rds On - Drain-Source Resistance: 2.8 mOhms Vgs th - Gate-Source Threshold Voltage: 1.54 V Qg - Gate Charge: 39 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 106 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | PSMN2R6-30YLC,115 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET N-Ch 30V 2.8mOhms (5 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 100 A Rds On - Drain-Source Resistance: 2.8 mOhms Vgs th - Gate-Source Threshold Voltage: 1.54 V Qg - Gate Charge: 39 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 106 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | PSMN2R6-30YLC,115 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET N-Ch 30V 2.8mOhms (50 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 100 A Rds On - Drain-Source Resistance: 2.8 mOhms Vgs th - Gate-Source Threshold Voltage: 1.54 V Qg - Gate Charge: 39 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 106 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | PSMN2R6-30YLC,115 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET N-Ch 30V 2.8mOhms (1 piece)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 100 A Rds On - Drain-Source Resistance: 2.8 mOhms Vgs th - Gate-Source Threshold Voltage: 1.54 V Qg - Gate Charge: 39 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 106 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | PSMN2R6-30YLC,115 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
