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IXYS FMM110-015X2F | Transistor: N-MOSFET x2; TrenchT2?; unipolar; 150V; 53A; Idm: 300A

IXYS . FMM110-015X2F

Attributes

Brand name, Manufacturer name, Manufacturer, Attribute00, Brand, Label, Man, Publisher, StudioIXYS
Attribute01N-MOSFET x2
Attribute02TrenchT2?
Attribute03unipolar
Attribute04150V
Attribute0553A
Attribute06300A
Attribute07180W
Attribute08ISOPLUS i4-pac? x024a
Attribute09?30V
Attribute1020m?
Attribute11THT
Attribute12150nC
Attribute13tube
Attribute14enhanced
Attribute15double series
Attribute1685ns
AttributeKey00Manufacturer
AttributeKey01Type of transistor
AttributeKey02Technology
AttributeKey03Polarisation
AttributeKey04Drain-source voltage
AttributeKey05Drain current
AttributeKey06Pulsed drain current
AttributeKey07Power dissipation
AttributeKey08Case
AttributeKey09Gate-source voltage
AttributeKey10On-state resistance
AttributeKey11Mounting
AttributeKey12Gate charge
AttributeKey13Kind of package
AttributeKey14Kind of channel
AttributeKey15Semiconductor structure
AttributeKey16Reverse recovery time
CategoryL1Semiconductors
CategoryL2Transistors
CategoryL3Unipolar transistors
CategoryL4Multi channel transistors
Extra Product NameIXYS FMM110-015X2F | Transistor: N-MOSFET x2; TrenchT2?; unipolar; 150V; 53A; Idm: 300A
atoms, moq, multiple, Case, PackageQuantity1
jsonUrlDatac4c88e188eece259e5190f3fc130644b.
jsonUrlData25ab14289a81dcfa7393d
keywordsIXYS, FMM110-015X2F, Semiconductors, Transistors, Unipolar transistors, Multi channel transistors
MPN, SKU, Part Number, PartNumberFMM110-015X2F
qtyInStock0
snippetIXYS FMM110-015X2F | Transistor: N-MOSFET x2; TrenchT2?; unipolar; 150V; 53A; Idm: 300
Product Group, ProductGroupBISS
AsinB00MEJD82C
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 747-FMM110-015X2F
FeatureManufacturer: IXYS Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 150 V Vgs - Gate-Source Breakdown Voltage: +/- 30 V Id - Continuous Drain Current: 53 A Rds On - Drain-Source Resistance: 20 mOhms Vgs th - Gate-Source Threshold Voltage: 4.5 V Qg - Gate Charge: 150 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 180 W
ProductTypeNameELECTRONIC_COMPONENT
TitleMOSFET DUAL PHASE LEGCONFIG 150V 53A MOSFET

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MOSFET DUAL PHASE LEGCONFIG 150V 53A MOSFET
Brand: IXYS
Catalog
FeatureManufacturer: IXYS Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 150 V Vgs - Gate-Source Breakdown Voltage: +/- 30 V Id - Continuous Drain Current: 53 A Rds On - Drain-Source Resistance: 20 mOhms Vgs th - Gate-Source Threshold Voltage: 4.5 V Qg - Gate Charge: 150 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 180 W
CategoryIndustrial & Scientific
MPNFMM110-015X2F
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerIXYS
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