cel . NE3503M04-A
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Digi-Key | 1135144 | 1 | 1 | ||
 Digi-Key | NE3503M04-A-ND | 100 | 1 | 100 @ $1.75 |
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Transistors RF JFET Low Noise HJ FET (10 pieces)
Brand: CEL
Catalog
| Feature | Manufacturer: CEL Product Category: Small Signal GaAs FETs RoHS: Type: GaAs HEMT Forward Transconductance - Min: 55 mS Vds - Drain-Source Breakdown Voltage: 4 V Vgs - Gate-Source Breakdown Voltage: - 3 V Id - Continuous Drain Current: 70 mA Frequency: 12 GHz Gain: 12 dB Pd - Power Dissipation: 125 mW Maximum Operating Temperature: + 125 C Mounting Style: SMD/SMT Package / Case: FTSMM-4 (M04) |
|---|---|
| Category | Industrial & Scientific |
| MPN | NE3503M04-A |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | CEL |
Transistors RF JFET Low Noise HJ FET (100 pieces)
Brand: CEL
Catalog
| Feature | Manufacturer: CEL Product Category: Small Signal GaAs FETs RoHS: Type: GaAs HEMT Forward Transconductance - Min: 55 mS Vds - Drain-Source Breakdown Voltage: 4 V Vgs - Gate-Source Breakdown Voltage: - 3 V Id - Continuous Drain Current: 70 mA Frequency: 12 GHz Gain: 12 dB Pd - Power Dissipation: 125 mW Maximum Operating Temperature: + 125 C Mounting Style: SMD/SMT Package / Case: FTSMM-4 (M04) |
|---|---|
| Category | Industrial & Scientific |
| MPN | NE3503M04-A |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | CEL |
Transistors RF JFET Low Noise HJ FET (5 pieces)
Brand: CEL
Catalog
| Feature | Manufacturer: CEL Product Category: Small Signal GaAs FETs RoHS: Type: GaAs HEMT Forward Transconductance - Min: 55 mS Vds - Drain-Source Breakdown Voltage: 4 V Vgs - Gate-Source Breakdown Voltage: - 3 V Id - Continuous Drain Current: 70 mA Frequency: 12 GHz Gain: 12 dB Pd - Power Dissipation: 125 mW Maximum Operating Temperature: + 125 C Mounting Style: SMD/SMT Package / Case: FTSMM-4 (M04) |
|---|---|
| Category | Industrial & Scientific |
| MPN | NE3503M04-A |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | CEL |
Transistors RF JFET Low Noise HJ FET (50 pieces)
Brand: CEL
Catalog
| Feature | Manufacturer: CEL Product Category: Small Signal GaAs FETs RoHS: Type: GaAs HEMT Forward Transconductance - Min: 55 mS Vds - Drain-Source Breakdown Voltage: 4 V Vgs - Gate-Source Breakdown Voltage: - 3 V Id - Continuous Drain Current: 70 mA Frequency: 12 GHz Gain: 12 dB Pd - Power Dissipation: 125 mW Maximum Operating Temperature: + 125 C Mounting Style: SMD/SMT Package / Case: FTSMM-4 (M04) |
|---|---|
| Category | Industrial & Scientific |
| MPN | NE3503M04-A |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | CEL |
Transistors RF JFET Low Noise HJ FET (1 piece)
Brand: CEL
Catalog
| Feature | Manufacturer: CEL Product Category: Small Signal GaAs FETs RoHS: Type: GaAs HEMT Forward Transconductance - Min: 55 mS Vds - Drain-Source Breakdown Voltage: 4 V Vgs - Gate-Source Breakdown Voltage: - 3 V Id - Continuous Drain Current: 70 mA Frequency: 12 GHz Gain: 12 dB Pd - Power Dissipation: 125 mW Maximum Operating Temperature: + 125 C Mounting Style: SMD/SMT Package / Case: FTSMM-4 (M04) |
|---|---|
| Category | Industrial & Scientific |
| MPN | NE3503M04-A |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | CEL |