Vishay N-Channel 20-V (D-S) Mosfet - SIR800DP-T1-GE3
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 86R3805 | 3000 | 3000 | 2000 @ $0.81, 4000 @ $0.73, 6000 @ $0.70, 10000 @ $0.68 | |
| Newark | 23T8478 | 1 | 1 | ||
| JT25-SIR800DP-T1-GE3 | 1 | 36000 | 1 | ||
| TME | SIR800DP-T1-GE3 | 3000 | 3000 | 3000 @ $1.35 | |
![]() Radwell | SIR800DP-T1-GE3 | 3000 | 3000 | ||
| Digi-Key | 2442449 | 1 | 1 | 1 @ $1.97, 10 @ $1.77, 100 @ $1.42, 500 @ $1.17, 1000 @ $1.00 | |
![]() swatee.com | SIR800DP-T1-GE3 | 1 | 618 | 1 | 1 @ $3.60 |
| Win Source | SIR800DP-T1-GE3 | 1 | 856 | 1 | |
| Hotenda | H1809857 | 1 | 3000 | 1 | 1 @ $0.71 |
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Vishay SIR800DP-T1-GE3, Trans MOSFET N-CH 20V 35.4A 8-Pin PowerPAK SO EP T/R (25 Items)
Brand: Vishay
EU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Quad Drain Triple Source Process Technology: TrenchFET Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 20 Maximum Gate Source Voltage (V): ±12 Maximum Gate Threshold Voltage (V): 1.5 Maximum Continuous Drain Current (A): 35.4 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 1 Maximum Drain Source Resistance (mOhm): 2.3@10V Typical Gate Charge @ Vgs (nC): 89@10V|41@4.5V Typical Gate Charge @ 10V (nC): 89 Typical Input Capacitance @ Vds (pF): 5125@10V Maximum Power Dissipation (mW): 5200 Typical Fall Time (ns): 27 Typical Rise Time (ns): 15 Typical Turn-Off Delay Time (ns): 70 Typical Turn-On Delay Time (ns): 27 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Supplier Package: PowerPAK SO EP Pin Count: 8 Mounting: Surface Mount Package Height: 1.07(Max) Package Length: 4.9 Package Width: 5.89 PCB changed: 8 Lead Shape: No Lead

