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Stmicroelectronics Igbt - STGWA19NC60HD

STMICROELECTRONICS . STGWA19NC60HD

Attributes

Brand name, Manufacturer nameSTMICROELECTRONICS
ManufacturerSTMICROELECTRONICS STMicroelectronics
CategoryL1Semiconductors - Discretes
CategoryL2More Semiconductors - Discretes
Extra Product NameStmicroelectronics Igbt - STGWA19NC60HD
jsonUrlDataSemiconductors - Discretes > More Semiconductors - Discretes
moq, multiple600
MPN, Part Number, PartNumberSTGWA19NC60HD
qtyInStock, tierPrice10
SKU39T7113
tierMinQty11
urlhttps://www.newark.com/39T7113?CMP=AFC-DATAALCHEMY
Product Group, ProductGroupBISS
AsinB00LUERVI4 B00LUERWHO B00LUERXLY B00LUERYPO B00M1GJYGM
Brand, Label, Man, Publisher, StudioSTMicroelectronics
Case, PackageQuantity1 10 100 5 50
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 511-STGWA19NC60HD X1 MS 511-STGWA19NC60HD X10 MS 511-STGWA19NC60HD X100 MS 511-STGWA19NC60HD X5 MS 511-STGWA19NC60HD X50
FeatureManufacturer: STMicroelectronics Product Category: IGBT Transistors RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 1.8 V Maximum Gate Emitter Voltage: +/- 20 V Continuous Collector Current at 25 C: 52 A Gate-Emitter Leakage Current: +/- 100 nA Power Dissipation: 208 W Maximum Operating Temperature: + 150 C Package / Case: TO-247
ProductTypeNameELECTRONIC_COMPONENT
TitleIGBT Transistors 19A 600V Very Fast IGBT Ultrafast Diode (1 piece) IGBT Transistors 19A 600V Very Fast IGBT Ultrafast Diode (10 pieces) IGBT Transistors 19A 600V Very Fast IGBT Ultrafast Diode (100 pieces) IGBT Transistors 19A 600V Very Fast IGBT Ultrafast Diode (5 pieces) IGBT Transistors 19A 600V Very Fast IGBT Ultrafast Diode (50 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Newark39T71136006001 @ $0.00
st.comSTGWA19NC60HD111 @ $3.03, 10 @ $2.55
jotrin.comJT25-STGWA19NC60HD178881
Digi-Key2612143111 @ $3.73, 10 @ $3.35, 100 @ $2.75, 500 @ $2.34, 1000 @ $2.32
iodPartsSTGWA19NC60HD1721
Win SourceSTGWA19NC60HD1125001
HotendaH184847818511 @ $2.78, 10 @ $2.50, 100 @ $2.05, 500 @ $1.74
Future Electronics4021340600600600 @ $2.57, 50 @ $1.96, 100 @ $1.87, 250 @ $1.75, 500 @ $1.67

Related on Amazon

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IGBT Transistors 19A 600V Very Fast IGBT Ultrafast Diode (10 pieces)
Brand: STMicroelectronics
Catalog
FeatureManufacturer: STMicroelectronics Product Category: IGBT Transistors RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 1.8 V Maximum Gate Emitter Voltage: +/- 20 V Continuous Collector Current at 25 C: 52 A Gate-Emitter Leakage Current: +/- 100 nA Power Dissipation: 208 W Maximum Operating Temperature: + 150 C Package / Case: TO-247
CategoryIndustrial & Scientific
MPNSTGWA19NC60HD
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerSTMicroelectronics
View on Amazon (paid link)
IGBT Transistors 19A 600V Very Fast IGBT Ultrafast Diode (100 pieces)
Brand: STMicroelectronics
Catalog
FeatureManufacturer: STMicroelectronics Product Category: IGBT Transistors RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 1.8 V Maximum Gate Emitter Voltage: +/- 20 V Continuous Collector Current at 25 C: 52 A Gate-Emitter Leakage Current: +/- 100 nA Power Dissipation: 208 W Maximum Operating Temperature: + 150 C Package / Case: TO-247
CategoryIndustrial & Scientific
MPNSTGWA19NC60HD
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerSTMicroelectronics
View on Amazon (paid link)
IGBT Transistors 19A 600V Very Fast IGBT Ultrafast Diode (5 pieces)
Brand: STMicroelectronics
Catalog
FeatureManufacturer: STMicroelectronics Product Category: IGBT Transistors RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 1.8 V Maximum Gate Emitter Voltage: +/- 20 V Continuous Collector Current at 25 C: 52 A Gate-Emitter Leakage Current: +/- 100 nA Power Dissipation: 208 W Maximum Operating Temperature: + 150 C Package / Case: TO-247
CategoryIndustrial & Scientific
MPNSTGWA19NC60HD
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerSTMicroelectronics
View on Amazon (paid link)
IGBT Transistors 19A 600V Very Fast IGBT Ultrafast Diode (50 pieces)
Brand: STMicroelectronics
Catalog
FeatureManufacturer: STMicroelectronics Product Category: IGBT Transistors RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 1.8 V Maximum Gate Emitter Voltage: +/- 20 V Continuous Collector Current at 25 C: 52 A Gate-Emitter Leakage Current: +/- 100 nA Power Dissipation: 208 W Maximum Operating Temperature: + 150 C Package / Case: TO-247
CategoryIndustrial & Scientific
MPNSTGWA19NC60HD
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerSTMicroelectronics
View on Amazon (paid link)
IGBT Transistors 19A 600V Very Fast IGBT Ultrafast Diode (1 piece)
Brand: STMicroelectronics
Catalog
FeatureManufacturer: STMicroelectronics Product Category: IGBT Transistors RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 1.8 V Maximum Gate Emitter Voltage: +/- 20 V Continuous Collector Current at 25 C: 52 A Gate-Emitter Leakage Current: +/- 100 nA Power Dissipation: 208 W Maximum Operating Temperature: + 150 C Package / Case: TO-247
CategoryIndustrial & Scientific
MPNSTGWA19NC60HD
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerSTMicroelectronics
View on Amazon (paid link)