Vishay N-Channel 20-V (D-S) Mosfet Rohs Compliant: Yes - SIR404DP-T1-GE3

EU RoHS: Compliant with Exemption ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 SVHC: Yes SVHC Exceeds Threshold: Yes Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Quad Drain Triple Source Process Technology: TrenchFET Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 20 Maximum Gate Source Voltage (V): ±12 Operating Junction Temperature (°C): -55 to 150 Maximum Continuous Drain Current (A): 60 Maximum Drain Source Resistance (mOhm): 1.6@10V Typical Gate Charge @ Vgs (nC): 36.5@2.5V|47.5@3.3V|64.5@4.5V Typical Input Capacitance @ Vds (pF): 8130@10V Maximum Power Dissipation (mW): 6250 Typical Fall Time (ns): 26 Typical Rise Time (ns): 20 Typical Turn-Off Delay Time (ns): 123 Typical Turn-On Delay Time (ns): 35 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Supplier Package: PowerPAK SO Pin Count: 8 Mounting: Surface Mount Package Height: 1.04 Package Length: 4.9 Package Width: 5.89 PCB changed: 8 Lead Shape: No Lead