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MAGX-001214-500L00 MACOM Technology Solutions | Discrete Semiconductor Products | DigiKey

Attributes

Brand name, Manufacturer name, Attribute01MACOM Technology Solutions
ManufacturerMACOM Technology Solutions MACOM
Attribute00Discrete Semiconductor Products
Attribute02, Attribute10, Attribute14, Attribute15-
Attribute03Bulk
Attribute04Obsolete
Attribute05HEMT
Attribute061.2GHz ~ 1.4GHz
Attribute0719.22dB
Attribute0850 V
Attribute0918.1A
Attribute11400 mA
Attribute12500W
Attribute1365 V
AttributeKey00Category
AttributeKey01Mfr
AttributeKey02Series
AttributeKey03Package
AttributeKey04Product Status
AttributeKey05Technology
AttributeKey06Frequency
AttributeKey07Gain
AttributeKey08Voltage - Test
AttributeKey09Current Rating (Amps)
AttributeKey10Noise Figure
AttributeKey11Current - Test
AttributeKey12Power - Output
AttributeKey13Voltage - Rated
AttributeKey14Package / Case
AttributeKey15Supplier Device Package
Extra Product NameMAGX-001214-500L00 MACOM Technology Solutions | Discrete Semiconductor Products | DigiKey
atoms, moq, multiple, NumberOfItems, PackageQuantity1
extraShipping, qtyInStock0
MPN, Part Number, PartNumberMAGX-001214-500L00
SKU4429592
snippetRF Mosfet 50 V 400 mA 1.2GHz ~ 1.4GHz 19.22dB 500W
Product Group, ProductGroupBISS
AsinB0137IFJ5M
Brand, Label, Man, Publisher, StudioMACOM
Case500
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161
Feature<b>Price For:</b> Each <b>Manufacturer</b>: MACOM <b>Product Category</b>: RF JFET Transistors <b>RoHS</b>: <b>Transistor Type</b>: HEMT <b>Technology</b>: GaN SiC <b>Frequency</b>: 1.2 GHz to 1.4 GHz <b>Gain</b>: 19.2 dB <b>Transistor Polarity</b>: N-Channel <b>Vds - Drain-Source Breakdown Voltage</b>: 175 V <b>Vgs - Gate-Source Breakdown Voltage</b>: - 8 V <b>Id - Continuous Drain Current</b>: 18.1 A <b>Output Power</b>: 500 W
ProductTypeNameELECTRONIC_COMPONENT
TitleRF JFET Transistors 1.2-1.4GHz 50V GaN 500W Pk Gain 19.2dB

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Digi-Key442959211
Digi-Key1465-1088-ND15
HotendaH191227711
Chip One Stop JapanMACO-00048721251 @ $1170.00, 5 @ $1150.00

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RF JFET Transistors 1.2-1.4GHz 50V GaN 500W Pk Gain 19.2dB
Brand: MACOM
Catalog
Feature<b>Price For:</b> Each <b>Manufacturer</b>: MACOM <b>Product Category</b>: RF JFET Transistors <b>RoHS</b>: <b>Transistor Type</b>: HEMT <b>Technology</b>: GaN SiC <b>Frequency</b>: 1.2 GHz to 1.4 GHz <b>Gain</b>: 19.2 dB <b>Transistor Polarity</b>: N-Channel <b>Vds - Drain-Source Breakdown Voltage</b>: 175 V <b>Vgs - Gate-Source Breakdown Voltage</b>: - 8 V <b>Id - Continuous Drain Current</b>: 18.1 A <b>Output Power</b>: 500 W
CategoryIndustrial & Scientific
MPNMAGX-001214-500L00
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerMACOM
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