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IXFH12N100Q IXYS Transistors - Jotrin Electronics

Gallery

Attributes

Brand name, Manufacturer name, ManufacturerIXYS Corporation
Attribute00TO-247
Attribute01MOSFET
Attribute02Green
Attribute03, qtyInStock208
Attribute041.05 Ohms
Attribute05Single
Attribute06+ 150 C
Attribute07Through Hole
Attribute08TO-247AD
Attribute09Tube
Attribute1015 ns
Attribute11- 55 C
Attribute12300 W
Attribute1323 ns
Attribute1450
Attribute1540 ns
AttributeKey00Package/Case
AttributeKey01Product Categories
AttributeKey02RoHs Status
AttributeKey03In-stock
AttributeKey04Resistance Drain Source RDS (on)
AttributeKey05Configuration
AttributeKey06Maximum Operating Temperature
AttributeKey07Mounting Style
AttributeKey08Package / Case
AttributeKey09Packaging
AttributeKey10Fall Time
AttributeKey11Minimum Operating Temperature
AttributeKey12Power Dissipation
AttributeKey13Rise Time
AttributeKey14Factory Pack Quantity
AttributeKey15Typical Turn Off Delay Time
Extra Product NameIXFH12N100Q IXYS Transistors - Jotrin Electronics
keywordsIXFH12N100Q,IXYS,TO-247,MOSFET,IXFH12N100Q Datasheet PDF
moq, multiple1
MPNIXFH12N100Q
SKUJT25-IXFH12N100Q
snippetBuy IXFH12N100Q IXYS , Learn more about IXFH12N100Q N-Channel Enhancement Mode HiPerFET Power MOSFET (maximum drain-source breakdown voltage 1000V, Resistance 1.05? N-channel enhancement mode HiPerFET power MOSFET) ,MOSFET 12 Amps 1000V 1.05 Ohms Rds, View the manufacturer, and stock, and datasheet pdf for the IXFH12N100Q at Jotrin Electronics.

Distributor offers

SellerSKUMOQIn stockMultiplePrices
jotrin.comJT25-IXFH12N100Q12081
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