As an Amazon Associate, we earn from qualifying purchases.

NE3510M04-T2-A CEL | Discrete Semiconductor Products | DigiKey

CEL . NE3510M04-T2-A

Attributes

Brand name, Manufacturer name, Manufacturer, Attribute01, Brand, Label, Man, Publisher, StudioCEL
Attribute00Discrete Semiconductor Products
Attribute02, Attribute12-
Attribute03Tape & Reel (TR)
Attribute04Obsolete
Attribute05HFET
Attribute064GHz
Attribute0716dB
Attribute082 V
Attribute0997mA
Attribute100.45dB
Attribute1115 mA
Attribute134 V
Attribute14SOT-343F
Attribute15M04
Attribute16NE3510
AttributeKey00Category
AttributeKey01Mfr
AttributeKey02Series
AttributeKey03Package
AttributeKey04Part Status
AttributeKey05Transistor Type
AttributeKey06Frequency
AttributeKey07Gain
AttributeKey08Voltage - Test
AttributeKey09Current Rating (Amps)
AttributeKey10Noise Figure
AttributeKey11Current - Test
AttributeKey12Power - Output
AttributeKey13Voltage - Rated
AttributeKey14Package / Case
AttributeKey15Supplier Device Package
AttributeKey16Base Product Number
Extra Product NameNE3510M04-T2-A CEL | Discrete Semiconductor Products | DigiKey
atoms, moq, multiple1
extraShipping, qtyInStock0
MPN, Part Number, PartNumberNE3510M04-T2-A
SKU2352513
Product Group, ProductGroupBISS
AsinB00LVIRLDE B00LVIRMTC B00LVIROI6 B00LVIRQDE B00LVIRSC8 B00M1JUN4G
Case, PackageQuantity1 10 100 5 50 500
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 551-NE3510M04-T2-A X1 MS 551-NE3510M04-T2-A X10 MS 551-NE3510M04-T2-A X100 MS 551-NE3510M04-T2-A X5 MS 551-NE3510M04-T2-A X50 MS 551-NE3510M04-T2-A X500
FeatureManufacturer: CEL Product Category: Small Signal GaAs FETs RoHS: Type: GaAs HEMT Forward Transconductance - Min: 70 mS Vds - Drain-Source Breakdown Voltage: 4 V Vgs - Gate-Source Breakdown Voltage: - 3 V Id - Continuous Drain Current: 97 mA Frequency: 4 GHz Gain: 16 dB Pd - Power Dissipation: 125 mW Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: FTSMM-4 (M04)
ProductTypeNameELECTRONIC_COMPONENT
Size500
TitleTransistors RF JFET L-S Band Lo No Amp (1 piece) Transistors RF JFET L-S Band Lo No Amp (10 pieces) Transistors RF JFET L-S Band Lo No Amp (100 pieces) Transistors RF JFET L-S Band Lo No Amp (5 pieces) Transistors RF JFET L-S Band Lo No Amp (50 pieces) Transistors RF JFET L-S Band Lo No Amp (500 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Digi-Key235251311
swatee.comNE3510M04-T2-A172311 @ $2.85

Related on Amazon

As an Amazon Associate, we earn from qualifying purchases. (paid link) CERTAIN CONTENT THAT APPEARS ON THIS SITE COMES FROM AMAZON. THIS CONTENT IS PROVIDED 'AS IS' AND IS SUBJECT TO CHANGE OR REMOVAL AT ANY TIME.

Transistors RF JFET L-S Band Lo No Amp (10 pieces)
Brand: CEL
Catalog
FeatureManufacturer: CEL Product Category: Small Signal GaAs FETs RoHS: Type: GaAs HEMT Forward Transconductance - Min: 70 mS Vds - Drain-Source Breakdown Voltage: 4 V Vgs - Gate-Source Breakdown Voltage: - 3 V Id - Continuous Drain Current: 97 mA Frequency: 4 GHz Gain: 16 dB Pd - Power Dissipation: 125 mW Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: FTSMM-4 (M04)
CategoryIndustrial & Scientific
MPNNE3510M04-T2-A
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerCEL
View on Amazon (paid link)
Transistors RF JFET L-S Band Lo No Amp (100 pieces)
Brand: CEL
Catalog
FeatureManufacturer: CEL Product Category: Small Signal GaAs FETs RoHS: Type: GaAs HEMT Forward Transconductance - Min: 70 mS Vds - Drain-Source Breakdown Voltage: 4 V Vgs - Gate-Source Breakdown Voltage: - 3 V Id - Continuous Drain Current: 97 mA Frequency: 4 GHz Gain: 16 dB Pd - Power Dissipation: 125 mW Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: FTSMM-4 (M04)
CategoryIndustrial & Scientific
MPNNE3510M04-T2-A
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerCEL
View on Amazon (paid link)
Transistors RF JFET L-S Band Lo No Amp (5 pieces)
Brand: CEL
Catalog
FeatureManufacturer: CEL Product Category: Small Signal GaAs FETs RoHS: Type: GaAs HEMT Forward Transconductance - Min: 70 mS Vds - Drain-Source Breakdown Voltage: 4 V Vgs - Gate-Source Breakdown Voltage: - 3 V Id - Continuous Drain Current: 97 mA Frequency: 4 GHz Gain: 16 dB Pd - Power Dissipation: 125 mW Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: FTSMM-4 (M04)
CategoryIndustrial & Scientific
MPNNE3510M04-T2-A
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerCEL
View on Amazon (paid link)
Transistors RF JFET L-S Band Lo No Amp (50 pieces)
Brand: CEL
Catalog
FeatureManufacturer: CEL Product Category: Small Signal GaAs FETs RoHS: Type: GaAs HEMT Forward Transconductance - Min: 70 mS Vds - Drain-Source Breakdown Voltage: 4 V Vgs - Gate-Source Breakdown Voltage: - 3 V Id - Continuous Drain Current: 97 mA Frequency: 4 GHz Gain: 16 dB Pd - Power Dissipation: 125 mW Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: FTSMM-4 (M04)
CategoryIndustrial & Scientific
MPNNE3510M04-T2-A
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerCEL
View on Amazon (paid link)
Transistors RF JFET L-S Band Lo No Amp (500 pieces)
Brand: CEL
Catalog
FeatureManufacturer: CEL Product Category: Small Signal GaAs FETs RoHS: Type: GaAs HEMT Forward Transconductance - Min: 70 mS Vds - Drain-Source Breakdown Voltage: 4 V Vgs - Gate-Source Breakdown Voltage: - 3 V Id - Continuous Drain Current: 97 mA Frequency: 4 GHz Gain: 16 dB Pd - Power Dissipation: 125 mW Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: FTSMM-4 (M04)
CategoryIndustrial & Scientific
MPNNE3510M04-T2-A
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerCEL
View on Amazon (paid link)
Transistors RF JFET L-S Band Lo No Amp (1 piece)
Brand: CEL
Catalog
FeatureManufacturer: CEL Product Category: Small Signal GaAs FETs RoHS: Type: GaAs HEMT Forward Transconductance - Min: 70 mS Vds - Drain-Source Breakdown Voltage: 4 V Vgs - Gate-Source Breakdown Voltage: - 3 V Id - Continuous Drain Current: 97 mA Frequency: 4 GHz Gain: 16 dB Pd - Power Dissipation: 125 mW Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: FTSMM-4 (M04)
CategoryIndustrial & Scientific
MPNNE3510M04-T2-A
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerCEL
View on Amazon (paid link)