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Infineon Mosfet, N-Ch, 600V, 11.3A, Smd-5 - IPL60R360P6SATMA1

INFINEON . IPL60R360P6SATMA1

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Attributes

Brand name, Manufacturer nameINFINEON
ManufacturerINFINEON Infineon Infineon Technologies
CategoryL1Semiconductors - Discretes
CategoryL2FETs
CategoryL3Single MOSFETs
Extra Product NameInfineon Mosfet, N-Ch, 600V, 11.3A, Smd-5 - IPL60R360P6SATMA1
jsonUrlDataSemiconductors - Discretes > FETs > Single MOSFETs
moq, multiple5
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tierPrice11.94
tierPrice21.61
tierPrice31.51
tierPrice41.39
tierPrice51.29
tierPrice61.19
tierPrice71.09
tierPrice80.921
urlhttps://www.newark.com/13AC9063?CMP=AFC-DATAALCHEMY
Product Group, ProductTypeNameBISS
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AdultProduct, Autographed, Memorabilia, TradeInEligibleFalse
AsinB0137KHETE B0137KNEP2 B0137KNNNU B0137KPJIC B087YJ9DNS
BrandInfineon Infineon Technologies
Case, NumberOfItems, PackageQuantity1 10 100 50
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
ClassificationId306919011
DisplayNameMOSFET
Feature<b>Price For:</b> Pack of 1 <b>Manufacturer</b>: Infineon <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 11.3 A <b>Vds - Drain-Source Breakdown Voltage</b>: 600 V <b>Rds On - Drain-Source Resistance</b>: 360 mOhms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 30 V <b>Vgs th - Gate-Source Threshold Voltage</b>: 4 V <b>Qg - Gate Charge</b>: 22 nC <b>Maximum Operating Temperature</b>: + 150 C <b>Price For:</b> Pack of 10 <b>Manufacturer</b>: Infineon <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 11.3 A <b>Vds - Drain-Source Breakdown Voltage</b>: 600 V <b>Rds On - Drain-Source Resistance</b>: 360 mOhms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 30 V <b>Vgs th - Gate-Source Threshold Voltage</b>: 4 V <b>Qg - Gate Charge</b>: 22 nC <b>Maximum Operating Temperature</b>: + 150 C <b>Price For:</b> Pack of 100 <b>Manufacturer</b>: Infineon <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 11.3 A <b>Vds - Drain-Source Breakdown Voltage</b>: 600 V <b>Rds On - Drain-Source Resistance</b>: 360 mOhms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 30 V <b>Vgs th - Gate-Source Threshold Voltage</b>: 4 V <b>Qg - Gate Charge</b>: 22 nC <b>Maximum Operating Temperature</b>: + 150 C <b>Price For:</b> Pack of 50 <b>Manufacturer</b>: Infineon <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 11.3 A <b>Vds - Drain-Source Breakdown Voltage</b>: 600 V <b>Rds On - Drain-Source Resistance</b>: 360 mOhms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 30 V <b>Vgs th - Gate-Source Threshold Voltage</b>: 4 V <b>Qg - Gate Charge</b>: 22 nC <b>Maximum Operating Temperature</b>: + 150 C
FetchTime1581814710 1581814711 1704469760
Height306 46 75
ItemClassificationBASE_PRODUCT
ItemName, Item_nameIPL60R360P6SATMA1, Trans MOSFET N-CH 600V 11.3A 8-Pin Thin-PAK EP T/R (25 Items)
Item_type_keywordmosfet-transistors
Label, Man, Publisher, StudioInfineon Technologies
Linkhttps://m.media-amazon.com/images/I/518oMmF1mSL._SL75_.jpg https://m.media-amazon.com/images/I/518oMmF1mSL.jpg
Marketplace_idATVPDKIKX0DER
ProductGroupBISS BISS Basic
ProductTypeELECTRONIC_COMPONENT
Product_site_launch_date2020-04-30T22:57:06.046Z
Size1 Piece 1 pack 10 Piece 10 pack 100 Piece 100 pack 50 Piece 50 pack
TitleMOSFET N-Ch 600V 11.3A ThinPAK 5x6 (1 piece) MOSFET N-Ch 600V 11.3A ThinPAK 5x6 (10 pieces) MOSFET N-Ch 600V 11.3A ThinPAK 5x6 (100 pieces) MOSFET N-Ch 600V 11.3A ThinPAK 5x6 (50 pieces)
URLhttp://ecx.images-amazon.com/images/I/11Ce5mEt1nL._SL75_.jpg
Unitspixels pounds
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WebsiteDisplayGroupbiss_basic_display_on_website
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Weight0.000625
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Distributor offers

SellerSKUMOQIn stockMultiplePrices
Newark13AC9063551 @ $1.94, 10 @ $1.61, 25 @ $1.51, 50 @ $1.39, 100 @ $1.29, 250 @ $1.19, 500 @ $1.09, 1000 @ $0.92
TMEIPL60R360P6SATMA111
RS Delivers220-7434111 @ $1.13
Digi-Key5405171111 @ $2.44, 10 @ $2.19, 100 @ $1.76, 500 @ $1.45, 1000 @ $1.38
ArrowIPL60R360P6SATMA11541311 @ $1.64, 10 @ $1.33, 100 @ $1.08, 1000 @ $0.81, 10000 @ $0.77
Win SourceIPL60R360P6SATMA11179971
HotendaH42990551345811 @ $1.66, 10 @ $1.49, 100 @ $1.20, 500 @ $0.98
Future Electronics9060202500050005000 @ $0.70

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MOSFET N-Ch 600V 11.3A ThinPAK 5x6 (1 piece)
Brand: Infineon Technologies
Listing
Product groupBISS Basic
Product typeBISS
Part numberIPL60R360P6SATMA1
Catalog
Feature<b>Price For:</b> Pack of 1 <b>Manufacturer</b>: Infineon <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 11.3 A <b>Vds - Drain-Source Breakdown Voltage</b>: 600 V <b>Rds On - Drain-Source Resistance</b>: 360 mOhms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 30 V <b>Vgs th - Gate-Source Threshold Voltage</b>: 4 V <b>Qg - Gate Charge</b>: 22 nC <b>Maximum Operating Temperature</b>: + 150 C
CategoryIndustrial & Scientific
MPNIPL60R360P6SATMA1
Product groupBISS
Product typeBISS
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET N-Ch 600V 11.3A ThinPAK 5x6 (10 pieces)
Brand: Infineon Technologies
Listing
Product groupBISS Basic
Product typeBISS
Part numberIPL60R360P6SATMA1
Catalog
Feature<b>Price For:</b> Pack of 10 <b>Manufacturer</b>: Infineon <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 11.3 A <b>Vds - Drain-Source Breakdown Voltage</b>: 600 V <b>Rds On - Drain-Source Resistance</b>: 360 mOhms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 30 V <b>Vgs th - Gate-Source Threshold Voltage</b>: 4 V <b>Qg - Gate Charge</b>: 22 nC <b>Maximum Operating Temperature</b>: + 150 C
CategoryIndustrial & Scientific
MPNIPL60R360P6SATMA1
Product groupBISS
Product typeBISS
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET N-Ch 600V 11.3A ThinPAK 5x6 (100 pieces)
Brand: Infineon Technologies
Listing
Product groupBISS Basic
Product typeBISS
Part numberIPL60R360P6SATMA1
Catalog
Feature<b>Price For:</b> Pack of 100 <b>Manufacturer</b>: Infineon <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 11.3 A <b>Vds - Drain-Source Breakdown Voltage</b>: 600 V <b>Rds On - Drain-Source Resistance</b>: 360 mOhms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 30 V <b>Vgs th - Gate-Source Threshold Voltage</b>: 4 V <b>Qg - Gate Charge</b>: 22 nC <b>Maximum Operating Temperature</b>: + 150 C
CategoryIndustrial & Scientific
MPNIPL60R360P6SATMA1
Product groupBISS
Product typeBISS
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET N-Ch 600V 11.3A ThinPAK 5x6 (50 pieces)
Brand: Infineon Technologies
Listing
Product groupBISS Basic
Product typeBISS
Part numberIPL60R360P6SATMA1
Catalog
Feature<b>Price For:</b> Pack of 50 <b>Manufacturer</b>: Infineon <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 11.3 A <b>Vds - Drain-Source Breakdown Voltage</b>: 600 V <b>Rds On - Drain-Source Resistance</b>: 360 mOhms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 30 V <b>Vgs th - Gate-Source Threshold Voltage</b>: 4 V <b>Qg - Gate Charge</b>: 22 nC <b>Maximum Operating Temperature</b>: + 150 C
CategoryIndustrial & Scientific
MPNIPL60R360P6SATMA1
Product groupBISS
Product typeBISS
ManufacturerInfineon Technologies
View on Amazon (paid link)