Toshiba X35 Pb-F Power Mosfet Transistor Dp(Os) Moq=2000 Pd=60W F=1Mhz Rohs Compliant: Yes - TK6P60W,RVQ
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 10AH1300 | 2000 | 2000 | 1 @ $0.99 | |
| Digi-Key | 3847327 | 1 | 1 | 2000 @ $0.89 | |
| Win Source | TK6P60W,RVQ | 1 | 3100 | 1 | |
| Hotenda | H1824407 | 1 | 1 | ||
| Mouser | 757-TK6P60WRVQ | 1190 | 1 @ $1.82, 10 @ $1.47, 50 @ $1.47, 100 @ $1.18, 1000 @ $0.85, 10000 @ $0.71 | ||
| Digi-Key | TK6P60WRVQTR-ND | 2000 | 2000 @ $0.80 |
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Catalog
| Category | Industrial & Scientific |
|---|---|
| MPN | TK6P60W,RVQ |
| Manufacturer | Toshiba |
MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC (10 pieces)
Brand: Toshiba
Catalog
| Feature | Manufacturer: Toshiba Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 6.2 A Rds On - Drain-Source Resistance: 680 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2.7 V to 3.7 V Qg - Gate Charge: 12 nC Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | TK6P60W,RVQ |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Toshiba |
MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC (100 pieces)
Brand: Toshiba
Catalog
| Feature | Manufacturer: Toshiba Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 6.2 A Rds On - Drain-Source Resistance: 680 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2.7 V to 3.7 V Qg - Gate Charge: 12 nC Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | TK6P60W,RVQ |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Toshiba |
MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC (5 pieces)
Brand: Toshiba
Catalog
| Feature | Manufacturer: Toshiba Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 6.2 A Rds On - Drain-Source Resistance: 680 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2.7 V to 3.7 V Qg - Gate Charge: 12 nC Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | TK6P60W,RVQ |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Toshiba |
MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC (50 pieces)
Brand: Toshiba
Catalog
| Feature | Manufacturer: Toshiba Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 6.2 A Rds On - Drain-Source Resistance: 680 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2.7 V to 3.7 V Qg - Gate Charge: 12 nC Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | TK6P60W,RVQ |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Toshiba |
MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC (1 piece)
Brand: Toshiba
Catalog
| Feature | Manufacturer: Toshiba Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 6.2 A Rds On - Drain-Source Resistance: 680 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2.7 V to 3.7 V Qg - Gate Charge: 12 nC Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | TK6P60W,RVQ |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Toshiba |