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Toshiba X35 Pb-F Power Mosfet Transistor Dp(Os) Moq=2000 Pd=60W F=1Mhz Rohs Compliant: Yes - TK6P60W,RVQ

Attributes

Brand name, Manufacturer nameTOSHIBA
ManufacturerTOSHIBA Toshiba
CategoryL1Semiconductors - Discretes
CategoryL2FETs
CategoryL3Single MOSFETs
Extra Product NameToshiba X35 Pb-F Power Mosfet Transistor Dp(Os) Moq=2000 Pd=60W F=1Mhz Rohs Compliant: Yes - TK6P60W,RVQ
jsonUrlDataSemiconductors - Discretes > FETs > Single MOSFETs
moq, multiple2000
MPN, Part Number, PartNumberTK6P60W,RVQ
qtyInStock0
SKU10AH1300
tierMinQty11
tierPrice10.993
urlhttps://www.newark.com/10AH1300?CMP=AFC-DATAALCHEMY
AsinB00HKI3OT4 B00LWOM0K6 B00LWOM4I4 B00LWOM7P4 B00LWOMAF6 B00M2DTHZM
Brand, Label, Man, Publisher, StudioToshiba
Case, PackageQuantity1 10 100 5 50
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 757-TK6P60WRVQ X1 MS 757-TK6P60WRVQ X10 MS 757-TK6P60WRVQ X100 MS 757-TK6P60WRVQ X5 MS 757-TK6P60WRVQ X50
FeatureManufacturer: Toshiba Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 6.2 A Rds On - Drain-Source Resistance: 680 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2.7 V to 3.7 V Qg - Gate Charge: 12 nC Maximum Operating Temperature: + 150 C
ProductGroupBISS
ProductTypeNameELECTRONIC_COMPONENT
Size1 Piece 10 Piece 100 Piece 5 Piece 50 Piece
TitleMOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC (1 piece) MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC (10 pieces) MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC (100 pieces) MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC (5 pieces) MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC (50 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Newark10AH1300200020001 @ $0.99
Digi-Key3847327112000 @ $0.89
Win SourceTK6P60W,RVQ131001
HotendaH182440711
Mouser757-TK6P60WRVQ11901 @ $1.82, 10 @ $1.47, 50 @ $1.47, 100 @ $1.18, 1000 @ $0.85, 10000 @ $0.71
Digi-KeyTK6P60WRVQTR-ND20002000 @ $0.80

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MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC (10 pieces)
Brand: Toshiba
Catalog
FeatureManufacturer: Toshiba Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 6.2 A Rds On - Drain-Source Resistance: 680 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2.7 V to 3.7 V Qg - Gate Charge: 12 nC Maximum Operating Temperature: + 150 C
CategoryIndustrial & Scientific
MPNTK6P60W,RVQ
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerToshiba
View on Amazon (paid link)
MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC (100 pieces)
Brand: Toshiba
Catalog
FeatureManufacturer: Toshiba Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 6.2 A Rds On - Drain-Source Resistance: 680 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2.7 V to 3.7 V Qg - Gate Charge: 12 nC Maximum Operating Temperature: + 150 C
CategoryIndustrial & Scientific
MPNTK6P60W,RVQ
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerToshiba
View on Amazon (paid link)
MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC (5 pieces)
Brand: Toshiba
Catalog
FeatureManufacturer: Toshiba Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 6.2 A Rds On - Drain-Source Resistance: 680 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2.7 V to 3.7 V Qg - Gate Charge: 12 nC Maximum Operating Temperature: + 150 C
CategoryIndustrial & Scientific
MPNTK6P60W,RVQ
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerToshiba
View on Amazon (paid link)
MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC (50 pieces)
Brand: Toshiba
Catalog
FeatureManufacturer: Toshiba Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 6.2 A Rds On - Drain-Source Resistance: 680 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2.7 V to 3.7 V Qg - Gate Charge: 12 nC Maximum Operating Temperature: + 150 C
CategoryIndustrial & Scientific
MPNTK6P60W,RVQ
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerToshiba
View on Amazon (paid link)
MOSFET N-Ch 9.7A 100W FET 600V 700pF 20nC (1 piece)
Brand: Toshiba
Catalog
FeatureManufacturer: Toshiba Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 6.2 A Rds On - Drain-Source Resistance: 680 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2.7 V to 3.7 V Qg - Gate Charge: 12 nC Maximum Operating Temperature: + 150 C
CategoryIndustrial & Scientific
MPNTK6P60W,RVQ
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerToshiba
View on Amazon (paid link)