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STG3P2M10N60B ST Transistors - Jotrin Electronics

STMicroelectronics, Inc . STG3P2M10N60B

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Attributes

Brand name, Manufacturer nameSTMicroelectronics, Inc
ManufacturerSTMicroelectronics, Inc STMicroelectronics
Attribute00SEMITOP 2-8
Attribute01IGBT Modules
Attribute02Rohs
Attribute03Obsoleted
Attribute04, moq, multiple, qtyInStock, Case, PackageQuantity1
Attribute05175°C
Attribute06+/- 20V
Attribute075V
Attribute08Through-Hole
Attribute09TO-247
Attribute10Tube
AttributeKey00Package/Case
AttributeKey01Product Categories
AttributeKey02RoHs Status
AttributeKey03Life Cycle
AttributeKey04In-stock
AttributeKey05Maximum Junction Temperature
AttributeKey06Gate Emitter Voltage (Vge)
AttributeKey07Threshold Voltage (Vge(th))
AttributeKey08Mounting Type
AttributeKey09Package / Case
AttributeKey10Packaging
Extra Product NameSTG3P2M10N60B ST Transistors - Jotrin Electronics
keywordsSTG3P2M10N60B,ST,SEMITOP 2-8,IGBT Modules,STG3P2M10N60B Datasheet PDF
MPN, Part Number, PartNumberSTG3P2M10N60B
SKUJT25-STG3P2M10N60B
snippetBuy STG3P2M10N60B ST , Learn more about STG3P2M10N60B 1 phase bridge rectifier + 3 phase inverter IGBT - SEMITOP®2 module,IGBT Modules 1Phase Bridg Rctifir 3 phase invertr IGBT, View the manufacturer, and stock, and datasheet pdf for the STG3P2M10N60B at Jotrin Electronics.
Product Group, ProductGroupBISS
AsinB00HKZNWBC
Brand, Label, Man, Publisher, StudioSTMicroelectronics
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 511-STG3P2M10N60B
FeatureManufacturer: STMicroelectronics Product Category: IGBT Transistors RoHS: Configuration: Hex Collector- Emitter Voltage VCEO Max: 600 V Maximum Gate Emitter Voltage: +/- 20 V Continuous Collector Current at 25 C: 19 A Maximum Operating Temperature: + 150 C Package / Case: SEMITOP 2-8 Packaging: Bulk Minimum Operating Temperature: - 40 C Mounting Style: SMD/SMT
ProductTypeNameELECTRONIC_COMPONENT
TitleIGBT Transistors 1Phase Bridg Rctifir 3 phase invertr IGBT

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SellerSKUMOQIn stockMultiplePrices
jotrin.comJT25-STG3P2M10N60B111
4 Star ElectronicsSTG3P2M10N60B11
Digi-Key112067311
swatee.comSTG3P2M10N60B1111 @ $59.72
HotendaH184593511
Future ElectronicsSTG3P2M10N60B11 @ $29.62, 2 @ $28.81, 10 @ $28.00, 20 @ $26.92

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IGBT Transistors 1Phase Bridg Rctifir 3 phase invertr IGBT
Brand: STMicroelectronics
Catalog
FeatureManufacturer: STMicroelectronics Product Category: IGBT Transistors RoHS: Configuration: Hex Collector- Emitter Voltage VCEO Max: 600 V Maximum Gate Emitter Voltage: +/- 20 V Continuous Collector Current at 25 C: 19 A Maximum Operating Temperature: + 150 C Package / Case: SEMITOP 2-8 Packaging: Bulk Minimum Operating Temperature: - 40 C Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNSTG3P2M10N60B
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerSTMicroelectronics
View on Amazon (paid link)