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APT42F50B MICROSEMI/APT Transistors - Jotrin Electronics

MICROSEMI/APT . APT42F50B

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Attributes

Brand name, Manufacturer nameMICROSEMI/APT
ManufacturerMICROSEMI/APT Microsemi
Attribute003P
Attribute01Transistors - FETs, MOSFETs - Single
Attribute02Lead free / RoHS Compliant
Attribute03, qtyInStock16
AttributeKey00Package/Case
AttributeKey01Product Categories
AttributeKey02RoHs Status
AttributeKey03In-stock
Extra Product NameAPT42F50B MICROSEMI/APT Transistors - Jotrin Electronics
keywordsAPT42F50B,MICROSEMI/APT,3P,Transistors - FETs, MOSFETs - Single,APT42F50B Datasheet PDF
moq, multiple, Case, NumberOfItems1
MPN, Part Number, PartNumberAPT42F50B
SKUJT25-APT42F50B
snippetBuy APT42F50B MICROSEMI/APT , Learn more about APT42F50B Power FREDFET; Package: TO-247 [B]; ID (A): 43; RDS(on) (Ohms): 0.13; BVDSS (V): 500;, View the manufacturer, and stock, and datasheet pdf for the APT42F50B at Jotrin Electronics.
Product Group, ProductGroup, ProductTypeNameBISS
AsinB0137IE94O
Brand, Label, Man, Publisher, StudioMicrosemi
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
Feature<b>Price For:</b> Each <b>Manufacturer</b>: Microsemi <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 42 A <b>Vds - Drain-Source Breakdown Voltage</b>: 500 V <b>Rds On - Drain-Source Resistance</b>: 110 mOhms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 30 V <b>Vgs th - Gate-Source Threshold Voltage</b>: 4 V <b>Qg - Gate Charge</b>: 170 nC <b>Maximum Operating Temperature</b>: + 150 C
TitleMOSFET Power FREDFET - MOS8

Distributor offers

SellerSKUMOQIn stockMultiplePrices
jotrin.comJT25-APT42F50B1161
Win SourceAPT42F50B1121
HotendaH1814622114011 @ $12.12, 10 @ $10.91, 50 @ $9.94, 100 @ $8.97, 250 @ $8.24, 500 @ $7.51

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MOSFET Power FREDFET - MOS8
Brand: Microsemi
Catalog
Feature<b>Price For:</b> Each <b>Manufacturer</b>: Microsemi <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 42 A <b>Vds - Drain-Source Breakdown Voltage</b>: 500 V <b>Rds On - Drain-Source Resistance</b>: 110 mOhms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 30 V <b>Vgs th - Gate-Source Threshold Voltage</b>: 4 V <b>Qg - Gate Charge</b>: 170 nC <b>Maximum Operating Temperature</b>: + 150 C
CategoryIndustrial & Scientific
MPNAPT42F50B
Product groupBISS
Product typeBISS
ManufacturerMicrosemi
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