Vishay P-Channel 30-V (D-S) Mosfet - SI2347DS-T1-GE3
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 99W9603 | 3000 | 3000 | 1 @ $0.10, 5000 @ $0.10, 10000 @ $0.09, 20000 @ $0.08, 30000 @ $0.07, 50000 @ $0.07 | |
 jotrin.com | JT25-SI2347DS-T1-GE3 | 1 | 3000 | 1 | |
| SI2347DS-T1-GE3 | 5 | 2115 | 5 | 5 @ $0.23, 25 @ $0.20, 100 @ $0.18, 500 @ $0.16, 3000 @ $0.15 | |
| RS Delivers | 180-7273 | 1 | 6000 | 1 | 1 @ $0.24 |
| Allied Electronics | 70459513 | 3000 | 3000 | ||
| Digi-Key | 5805462 | 1 | 1 | 1 @ $0.52, 10 @ $0.39, 100 @ $0.24, 500 @ $0.16, 1000 @ $0.13, 3000 @ $0.11, 6000 @ $0.11 | |
| Hotenda | H1826000 | 1 | 1 | 1 @ $0.09 | |
| Future Electronics | 3079301 | 3000 | 273 | 3000 | 3000 @ $0.09, 6000 @ $0.08 |
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SILICONIX (VISHAY) SI2347DS-T1-GE3 P-Channel 30 V 42 mOhm 22 nC Surface Mount Power Mosfet - SOT-23-3 - 3000 item(s)
Brand: SILICONIX (VISHAY)
P-Channel 30 V 42 mOhm 22 nC Surface Mount Power Mosfet - SOT-23-3 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
- ChannelType: P-Ch
- Noofchannels: 1
- VoltageDraintoSource: 30 V
- Drain-sourceOnResistance-Max: 42 mΩ
- RatedPowerDissipation(P): 1.2 WQgGateCharge: 14.5 nC; GateSourceVoltageMax: 20 V; DrainCurrent-Max(ID): 3.8 A; Turn-onTime-Nom(ton): 6 ns; Turn-offTime-Nom(toff): 19 ns; RiseTIme: 6 ns; FallTime: 9 ns; OperatingTempRange: -55 to +150 °C;
Listing
| Product group | BISS |
|---|---|
| Product type | BISS |
| Model | SI2347DS-T1-GE3 |
| Part number | SI2347DS-T1-GE3 |
| Items per pack | 3000 |
| Label | SILICONIX (VISHAY) |
| Manufacturer | SILICONIX (VISHAY) |
Catalog
| Feature | ChannelType: P-Ch |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI2347DS-T1-GE3 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | SILICONIX (VISHAY) |
SILICONIX (VISHAY) SI2347DS-T1-GE3 P-Channel 30 V 42 mOhm 22 nC Surface Mount Power Mosfet - SOT-23-3 - 25 item(s)
Brand: SILICONIX (VISHAY)
P-Channel 30 V 42 mOhm 22 nC Surface Mount Power Mosfet - SOT-23-3 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Model | SI2347DS-T1-GE3 |
| Part number | SI2347DS-T1-GE3 |
| Items per pack | 25 |
| Label | SILICONIX (VISHAY) |
| Manufacturer | SILICONIX (VISHAY) |
Catalog
| Category | Industrial & Scientific |
|---|---|
| MPN | SI2347DS-T1-GE3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | SILICONIX (VISHAY) |
SI2347DS-T1-GE3, Trans MOSFET P-CH 30V 3.8A 3-Pin SOT-23 T/R (250 Items)
Brand: Vishay
EU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Process Technology: TrenchFET Channel Mode: Enhancement Channel Type: P Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 30 Maximum Gate Source Voltage (V): ±20 Maximum Gate Threshold Voltage (V): 2.5 Operating Junction Temperature (°C): -55 to 150 Maximum Continuous Drain Current (A): 3.8 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 1 Maximum Drain Source Resistance (mOhm): 42@10V Typical Gate Charge @ Vgs (nC): 14.5@10V|6.9@4.5V Typical Gate Charge @ 10V (nC): 14.5 Typical Gate to Drain Charge (nC): 2.1 Typical Gate to Source Charge (nC): 2.3 Typical Reverse Recovery Charge (nC): 5 Typical Input Capacitance @ Vds (pF): 705@15V Typical Reverse Transfer Capacitance @ Vds (pF): 73 Minimum Gate Threshold Voltage (V): 1 Typical Output Capacitance (pF): 93 Maximum Power Dissipation (mW): 1200 Typical Fall Time (ns): 7|9 Typical Rise Time (ns): 6|9 Typical Turn-Off Delay Time (ns): 19|18 Typical Turn-On Delay Time (ns): 6|10 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Maximum Power Dissipation on PCB @ TC=25°C (W): 1.2 Maximum Pulsed Drain Current @ TC=25°C (A): 20 Maximum Junction Ambient Thermal Resistance on PCB (°C/W): 175 Typical Diode Forward Voltage (V): 0.8 Typical Gate Plateau Voltage (V): 2.7 Typical Reverse Recovery Time (ns): 13 Maximum Diode Forward Voltage (V): 1.2 Minimum Gate Resistance (Ohm): 1.7 Maximum Gate Resistance (Ohm): 17 Maximum Positive Gate Source Voltage (V): 20 Maximum Continuous Drain Current on PCB @ TC=25°C (A): 3.8 Supplier Package: SOT-23 Pin Count: 3 Standard Package Name: SOT Mounting: Surface Mount Package Height: 1.02(Max) Package Length: 3.04(Max) Package Width: 1.4(Max) PCB changed: 3 Lead Shape: Gull-wing
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Model | SI2347DS-T1-GE3 |
| Part number | SI2347DS-T1-GE3 |
| Items per pack | 250 |
| Label | Vishay |
| Manufacturer | Vishay |