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Onsemi Igbt, Single, 600V, 10A, To-263Ab - FGB5N60UNDF

ONSEMI . FGB5N60UNDF

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Attributes

Brand name, Manufacturer nameONSEMI
ManufacturerONSEMI Fairchild Semiconductor
CategoryL1Semiconductors - Discretes
CategoryL2IGBTs
CategoryL3Single IGBTs
Extra Product NameOnsemi Igbt, Single, 600V, 10A, To-263Ab - FGB5N60UNDF
jsonUrlDataSemiconductors - Discretes > IGBTs > Single IGBTs
moq, multiple, tierMinQty11
MPN, Part Number, PartNumberFGB5N60UNDF
qtyInStock0
SKU57AC1890
tierMinQty210
tierMinQty3100
tierPrice11.28
tierPrice21.14
tierPrice31.05
urlhttps://www.newark.com/57AC1890?CMP=AFC-DATAALCHEMY
Product Group, ProductGroupBISS
AsinB00LUF2L24 B00LUF2LQK B00LUF2MGE B00LUF2N0Y B00LUF2NO0 B00M1GVFFK
Brand, Label, Man, Publisher, StudioFairchild Semiconductor
Case, PackageQuantity1 10 100 5 50 500
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 512-FGB5N60UNDF X1 MS 512-FGB5N60UNDF X10 MS 512-FGB5N60UNDF X100 MS 512-FGB5N60UNDF X5 MS 512-FGB5N60UNDF X50 MS 512-FGB5N60UNDF X500
FeatureManufacturer: Fairchild Semiconductor RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 2.4 V Maximum Gate Emitter Voltage: +/- 20 V Continuous Collector Current at 25 C: 10 A Gate-Emitter Leakage Current: +/- 10 nA Power Dissipation: 73.5 W Maximum Operating Temperature: + 150 C Package / Case: TO-263AB (D2 PAK) Packaging: Tube
ProductTypeNameELECTRONIC_COMPONENT
Size500
TitleIGBT Transistors 600V 5A NPT IGBT (1 piece) IGBT Transistors 600V 5A NPT IGBT (10 pieces) IGBT Transistors 600V 5A NPT IGBT (100 pieces) IGBT Transistors 600V 5A NPT IGBT (5 pieces) IGBT Transistors 600V 5A NPT IGBT (50 pieces) IGBT Transistors 600V 5A NPT IGBT (500 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Newark57AC1890111 @ $1.28, 10 @ $1.14, 100 @ $1.05
Digi-Key316335017301325 @ $0.92, 424 @ $1.18
Digi-Key1345232711352 @ $0.85
Digi-Key2156-FGB5N60UNDF-OS-ND11
RS Delivers864-881511
Win SourceFGB5N60UNDF165681
HotendaH1849203174111 @ $1.80, 10 @ $1.61, 100 @ $1.30, 500 @ $1.07

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IGBT Transistors 600V 5A NPT IGBT (10 pieces)
Brand: Fairchild Semiconductor
Catalog
FeatureManufacturer: Fairchild Semiconductor RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 2.4 V Maximum Gate Emitter Voltage: +/- 20 V Continuous Collector Current at 25 C: 10 A Gate-Emitter Leakage Current: +/- 10 nA Power Dissipation: 73.5 W Maximum Operating Temperature: + 150 C Package / Case: TO-263AB (D2 PAK) Packaging: Tube
CategoryIndustrial & Scientific
MPNFGB5N60UNDF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerFairchild Semiconductor
View on Amazon (paid link)
IGBT Transistors 600V 5A NPT IGBT (100 pieces)
Brand: Fairchild Semiconductor
Catalog
FeatureManufacturer: Fairchild Semiconductor RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 2.4 V Maximum Gate Emitter Voltage: +/- 20 V Continuous Collector Current at 25 C: 10 A Gate-Emitter Leakage Current: +/- 10 nA Power Dissipation: 73.5 W Maximum Operating Temperature: + 150 C Package / Case: TO-263AB (D2 PAK) Packaging: Tube
CategoryIndustrial & Scientific
MPNFGB5N60UNDF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerFairchild Semiconductor
View on Amazon (paid link)
IGBT Transistors 600V 5A NPT IGBT (5 pieces)
Brand: Fairchild Semiconductor
Catalog
FeatureManufacturer: Fairchild Semiconductor RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 2.4 V Maximum Gate Emitter Voltage: +/- 20 V Continuous Collector Current at 25 C: 10 A Gate-Emitter Leakage Current: +/- 10 nA Power Dissipation: 73.5 W Maximum Operating Temperature: + 150 C Package / Case: TO-263AB (D2 PAK) Packaging: Tube
CategoryIndustrial & Scientific
MPNFGB5N60UNDF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerFairchild Semiconductor
View on Amazon (paid link)
IGBT Transistors 600V 5A NPT IGBT (50 pieces)
Brand: Fairchild Semiconductor
Catalog
FeatureManufacturer: Fairchild Semiconductor RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 2.4 V Maximum Gate Emitter Voltage: +/- 20 V Continuous Collector Current at 25 C: 10 A Gate-Emitter Leakage Current: +/- 10 nA Power Dissipation: 73.5 W Maximum Operating Temperature: + 150 C Package / Case: TO-263AB (D2 PAK) Packaging: Tube
CategoryIndustrial & Scientific
MPNFGB5N60UNDF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerFairchild Semiconductor
View on Amazon (paid link)
IGBT Transistors 600V 5A NPT IGBT (500 pieces)
Brand: Fairchild Semiconductor
Catalog
FeatureManufacturer: Fairchild Semiconductor RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 2.4 V Maximum Gate Emitter Voltage: +/- 20 V Continuous Collector Current at 25 C: 10 A Gate-Emitter Leakage Current: +/- 10 nA Power Dissipation: 73.5 W Maximum Operating Temperature: + 150 C Package / Case: TO-263AB (D2 PAK) Packaging: Tube
CategoryIndustrial & Scientific
MPNFGB5N60UNDF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerFairchild Semiconductor
View on Amazon (paid link)
IGBT Transistors 600V 5A NPT IGBT (1 piece)
Brand: Fairchild Semiconductor
Catalog
FeatureManufacturer: Fairchild Semiconductor RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 2.4 V Maximum Gate Emitter Voltage: +/- 20 V Continuous Collector Current at 25 C: 10 A Gate-Emitter Leakage Current: +/- 10 nA Power Dissipation: 73.5 W Maximum Operating Temperature: + 150 C Package / Case: TO-263AB (D2 PAK) Packaging: Tube
CategoryIndustrial & Scientific
MPNFGB5N60UNDF
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerFairchild Semiconductor
View on Amazon (paid link)