VISHAY . SI4010DY-T1-GE3
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Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 67X6859 | 1 | 1 | ||
| Digi-Key | 6834486 | 1 | 1 |
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MOSFET N-Channel 30V (100 pieces)
Brand: Vishay Semiconductors
Catalog
| Feature | <b>Price For:</b> Pack of 100 <b>Manufacturer</b>: Vishay <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 31.3 A <b>Vds - Drain-Source Breakdown Voltage</b>: 30 V <b>Rds On - Drain-Source Resistance</b>: 3.4 mOhms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: - 16 V, + 20 V <b>Vgs th - Gate-Source Threshold Voltage</b>: 1 V <b>Qg - Gate Charge</b>: 51 nC <b>Maximum Operating Temperature</b>: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI4010DY-T1-GE3 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Vishay Semiconductors |
MOSFET N-Channel 30V (5 pieces)
Brand: Vishay Semiconductors
Catalog
| Feature | <b>Price For:</b> Pack of 5 <b>Manufacturer</b>: Vishay <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 31.3 A <b>Vds - Drain-Source Breakdown Voltage</b>: 30 V <b>Rds On - Drain-Source Resistance</b>: 3.4 mOhms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: - 16 V, + 20 V <b>Vgs th - Gate-Source Threshold Voltage</b>: 1 V <b>Qg - Gate Charge</b>: 51 nC <b>Maximum Operating Temperature</b>: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI4010DY-T1-GE3 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Vishay Semiconductors |
MOSFET N-Channel 30V (50 pieces)
Brand: Vishay Semiconductors
Catalog
| Feature | <b>Price For:</b> Pack of 50 <b>Manufacturer</b>: Vishay <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 31.3 A <b>Vds - Drain-Source Breakdown Voltage</b>: 30 V <b>Rds On - Drain-Source Resistance</b>: 3.4 mOhms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: - 16 V, + 20 V <b>Vgs th - Gate-Source Threshold Voltage</b>: 1 V <b>Qg - Gate Charge</b>: 51 nC <b>Maximum Operating Temperature</b>: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI4010DY-T1-GE3 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Vishay Semiconductors |
MOSFET N-Channel 30V (1 piece)
Brand: Vishay Semiconductors
Catalog
| Feature | <b>Price For:</b> Pack of 1 <b>Manufacturer</b>: Vishay <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 31.3 A <b>Vds - Drain-Source Breakdown Voltage</b>: 30 V <b>Rds On - Drain-Source Resistance</b>: 3.4 mOhms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: - 16 V, + 20 V <b>Vgs th - Gate-Source Threshold Voltage</b>: 1 V <b>Qg - Gate Charge</b>: 51 nC <b>Maximum Operating Temperature</b>: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI4010DY-T1-GE3 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Vishay Semiconductors |
MOSFET N-Channel 30V (10 pieces)
Brand: Vishay Semiconductors
Catalog
| Feature | <b>Price For:</b> Pack of 10 <b>Manufacturer</b>: Vishay <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Id - Continuous Drain Current</b>: 31.3 A <b>Vds - Drain-Source Breakdown Voltage</b>: 30 V <b>Rds On - Drain-Source Resistance</b>: 3.4 mOhms <b>Transistor Polarity</b>: N-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: - 16 V, + 20 V <b>Vgs th - Gate-Source Threshold Voltage</b>: 1 V <b>Qg - Gate Charge</b>: 51 nC <b>Maximum Operating Temperature</b>: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI4010DY-T1-GE3 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Vishay Semiconductors |