VISHAY . SI9926CDY-T1-GE3
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 16P3886 | 1 | 1 | ||
| JT25-SI9926CDY-T1-GE3 | 1 | 7550 | 1 | ||
| SI9926CDY-T1-GE3 | 1 | 1 | |||
| SI9926CDY-T1-GE3 | 1 | 1 | |||
| Digi-Key | 1978863 | 1 | 1 | 1 @ $1.28, 10 @ $1.15, 100 @ $0.89, 500 @ $0.74, 1000 @ $0.58, 2500 @ $0.54, 5000 @ $0.52, 12500 @ $0.50 | |
| 1Source | SI9926CDY-T1-GE3 | 1 | 1 | ||
 Radwell | SI9926CDY-T1-GE3 | 1 | 1 | ||
 IBS Electronics | SI9926CDY-T1-GE3 | 1 | 1 | 1 @ $0.65 | |
| Digi-Key | 1979159 | 1 | 1 | 1 @ $1.10, 10 @ $0.99, 25 @ $0.94, 100 @ $0.77, 500 @ $0.64, 1000 @ $0.50 | |
| Win Source | SI9926CDY-T1-GE3 | 1 | 39820 | 1 | |
| Future Electronics | 3004748 | 2500 | 5000 | 2500 | 2500 @ $0.46 |
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SILICONIX (VISHAY) SI9926CDY-T1-GE3 Discretes mosfets Dual N-Channel 20 V 0.018 Ohm 3.1 W Surface Mount Power Mosfet - SOIC-8-25 Item(s)
Brand: SILICONIX (VISHAY)
Dual N-Channel 20 V 0.018 Ohm 3.1 W Surface Mount Power Mosfet - SOIC-8 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
- ChannelType: Dual N-Channel
- VoltageDraintoSource: 20 V
- Drain-sourceOnResistance-Max: 0.018 Ω
- QgGateCharge: 33 nC
- RatedPowerDissipation(P): 3.1 W
Listing
| Product group | BISS Basic |
|---|---|
| Product type | BISS |
| Model | SI9926CDY-T1-GE3 |
| Part number | SI9926CDY-T1-GE3 |
| Items per pack | 25 |
| Label | SILICONIX (VISHAY) |
| Manufacturer | SILICONIX (VISHAY) |
Catalog
| Feature | ChannelType: Dual N-Channel |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI9926CDY-T1-GE3 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | SILICONIX (VISHAY) |
SILICONIX (VISHAY) SI9926CDY-T1-GE3 Dual N-Channel 20 V 0.018 Ohm 3.1 W Surface Mount Power Mosfet - SOIC-8 - 2500 item(s)
Brand: SILICONIX (VISHAY)
Dual N-Channel 20 V 0.018 Ohm 3.1 W Surface Mount Power Mosfet - SOIC-8 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
- ChannelType: Dual N-Channel
- VoltageDraintoSource: 20 V
- Drain-sourceOnResistance-Max: 0.018 Ω
- QgGateCharge: 33 nC
- RatedPowerDissipation(P): 3.1 W
Listing
| Product group | BISS Basic |
|---|---|
| Product type | BISS |
| Model | SI9926CDY-T1-GE3 |
| Part number | SI9926CDY-T1-GE3 |
| Items per pack | 2500 |
| Label | SILICONIX (VISHAY) |
| Manufacturer | SILICONIX (VISHAY) |
Catalog
| Feature | ChannelType: Dual N-Channel |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI9926CDY-T1-GE3 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | SILICONIX (VISHAY) |