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Onsemi Fs2Pigbt To263 40A 600V / Reel - FGB40N60SM

ONSEMI . FGB40N60SM

Attributes

Brand name, Manufacturer nameONSEMI
ManufacturerONSEMI Fairchild Semiconductor
CategoryL1Semiconductors - Discretes
CategoryL2More Semiconductors - Discretes
Extra Product NameOnsemi Fs2Pigbt To263 40A 600V / Reel - FGB40N60SM
jsonUrlDataSemiconductors - Discretes > More Semiconductors - Discretes
moq, multiple800
MPN, Part Number, PartNumberFGB40N60SM
qtyInStock, tierPrice10
SKU95T0026
tierMinQty11
urlhttps://www.newark.com/95T0026?CMP=AFC-DATAALCHEMY
Product GroupBISS
ASINB00M1GV2ZS
AsinB00LUF2GA6 B00LUF2GW4 B00LUF2HJQ B00LUF2I2C B00LUF2J3A B00M1GV2ZS
Brand, Label, Man, Publisher, StudioFairchild Semiconductor
Case, PackageQuantity1 10 100 5 50 500
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 512-FGB40N60SM X1 MS 512-FGB40N60SM X10 MS 512-FGB40N60SM X100 MS 512-FGB40N60SM X5 MS 512-FGB40N60SM X50 MS 512-FGB40N60SM X500
FeatureManufacturer: Fairchild Semiconductor RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 2.3 V Maximum Gate Emitter Voltage: +/- 20 V Continuous Collector Current at 25 C: 80 A Gate-Emitter Leakage Current: +/- 400 nA Power Dissipation: 349 W Maximum Operating Temperature: + 175 C Package / Case: TO-263AB (D2 PAK) Packaging: Reel
FetchTime1626062355
Height56
OldTitleIGBT Transistors 600V 40A FIELD STOP PLANAR IGBT GEN2 (1 piece)
ProductGroupBISS BISS Basic
ProductTypeNameBISS ELECTRONIC_COMPONENT
Size500
TitleIGBT Transistors 600V 40A FIELD STOP PLANAR IGBT GEN2 IGBT Transistors 600V 40A FIELD STOP PLANAR IGBT GEN2 (10 pieces) IGBT Transistors 600V 40A FIELD STOP PLANAR IGBT GEN2 (100 pieces) IGBT Transistors 600V 40A FIELD STOP PLANAR IGBT GEN2 (5 pieces) IGBT Transistors 600V 40A FIELD STOP PLANAR IGBT GEN2 (50 pieces) IGBT Transistors 600V 40A FIELD STOP PLANAR IGBT GEN2 (500 pieces)
TitleSourcelistings feed
URLhttps://m.media-amazon.com/images/I/11WRIFkgENL._SL75_.jpg
Unitspixels pounds
Weight0.000625
Width75

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Newark95T00268008001 @ $0.00
RS Delivers864-8811P11
Digi-Key390809211
Digi-Key134909091182 @ $1.82
AmazonSCB00M1GV2ZS11
Win SourceFGB40N60SM1357881
HotendaH18487361100811 @ $3.55, 10 @ $3.19, 100 @ $2.61
Future Electronics3105796111 @ $3.10, 30 @ $2.91, 300 @ $2.36
ArrowFGB40N60SM1231 @ $3.59, 10 @ $3.00, 25 @ $2.91, 100 @ $2.82
Mouser512-FGB40N60SM5501 @ $3.63, 10 @ $2.92, 50 @ $2.92, 100 @ $2.66, 1000 @ $1.81, 10000 @ $1.58
Rochester ElectronicsFGB40N60SM2571 @ $2.72, 25 @ $2.52, 100 @ $2.42, 500 @ $2.32, 1000 @ $2.21
AvnetFGB40N60SM800800 @ $1.93, 1600 @ $1.84, 3200 @ $1.76, 4800 @ $1.69, 8000 @ $1.66
RS Components8648811286
STLAA.comFGB40N60SM960
Ewing ComponentsFGB40N60SM7834
Abacus TechnologiesFGB40N60SM986

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IGBT Transistors 600V 40A FIELD STOP PLANAR IGBT GEN2 (10 pieces)
Brand: Fairchild Semiconductor
Catalog
FeatureManufacturer: Fairchild Semiconductor RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 2.3 V Maximum Gate Emitter Voltage: +/- 20 V Continuous Collector Current at 25 C: 80 A Gate-Emitter Leakage Current: +/- 400 nA Power Dissipation: 349 W Maximum Operating Temperature: + 175 C Package / Case: TO-263AB (D2 PAK) Packaging: Reel
CategoryIndustrial & Scientific
MPNFGB40N60SM
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerFairchild Semiconductor
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IGBT Transistors 600V 40A FIELD STOP PLANAR IGBT GEN2 (100 pieces)
Brand: Fairchild Semiconductor
Catalog
FeatureManufacturer: Fairchild Semiconductor RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 2.3 V Maximum Gate Emitter Voltage: +/- 20 V Continuous Collector Current at 25 C: 80 A Gate-Emitter Leakage Current: +/- 400 nA Power Dissipation: 349 W Maximum Operating Temperature: + 175 C Package / Case: TO-263AB (D2 PAK) Packaging: Reel
CategoryIndustrial & Scientific
MPNFGB40N60SM
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerFairchild Semiconductor
View on Amazon (paid link)
IGBT Transistors 600V 40A FIELD STOP PLANAR IGBT GEN2 (5 pieces)
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Catalog
FeatureManufacturer: Fairchild Semiconductor RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 2.3 V Maximum Gate Emitter Voltage: +/- 20 V Continuous Collector Current at 25 C: 80 A Gate-Emitter Leakage Current: +/- 400 nA Power Dissipation: 349 W Maximum Operating Temperature: + 175 C Package / Case: TO-263AB (D2 PAK) Packaging: Reel
CategoryIndustrial & Scientific
MPNFGB40N60SM
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerFairchild Semiconductor
View on Amazon (paid link)
IGBT Transistors 600V 40A FIELD STOP PLANAR IGBT GEN2 (50 pieces)
Brand: Fairchild Semiconductor
Catalog
FeatureManufacturer: Fairchild Semiconductor RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 2.3 V Maximum Gate Emitter Voltage: +/- 20 V Continuous Collector Current at 25 C: 80 A Gate-Emitter Leakage Current: +/- 400 nA Power Dissipation: 349 W Maximum Operating Temperature: + 175 C Package / Case: TO-263AB (D2 PAK) Packaging: Reel
CategoryIndustrial & Scientific
MPNFGB40N60SM
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerFairchild Semiconductor
View on Amazon (paid link)
IGBT Transistors 600V 40A FIELD STOP PLANAR IGBT GEN2 (500 pieces)
Brand: Fairchild Semiconductor
Catalog
FeatureManufacturer: Fairchild Semiconductor RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 2.3 V Maximum Gate Emitter Voltage: +/- 20 V Continuous Collector Current at 25 C: 80 A Gate-Emitter Leakage Current: +/- 400 nA Power Dissipation: 349 W Maximum Operating Temperature: + 175 C Package / Case: TO-263AB (D2 PAK) Packaging: Reel
CategoryIndustrial & Scientific
MPNFGB40N60SM
Product groupBISS
Product typeBISS
ManufacturerFairchild Semiconductor
View on Amazon (paid link)
IGBT Transistors 600V 40A FIELD STOP PLANAR IGBT GEN2
Brand: Fairchild Semiconductor
Listing
Product groupBISS Basic
Product typeELECTRONIC_COMPONENT
Part numberFGB40N60SM
LabelFairchild Semiconductor
ManufacturerFairchild Semiconductor
Catalog
FeatureManufacturer: Fairchild Semiconductor RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 2.3 V Maximum Gate Emitter Voltage: +/- 20 V Continuous Collector Current at 25 C: 80 A Gate-Emitter Leakage Current: +/- 400 nA Power Dissipation: 349 W Maximum Operating Temperature: + 175 C Package / Case: TO-263AB (D2 PAK) Packaging: Reel
CategoryIndustrial & Scientific
MPNFGB40N60SM
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerFairchild Semiconductor
View on Amazon (paid link)