MICROCHIP . TN0106N3-G
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 99Y2664 | 1 | 1 | ||
| TN0106N3-G | 1 | 306 | 1 | 1 @ $1.15, 5 @ $1.02, 25 @ $0.84, 100 @ $0.77 | |
| 4902370 | 1 | 5386 | 1 | 1 @ $1.06, 25 @ $0.89, 100 @ $0.80 | |
| Allied Electronics | 70452037 | 1284 | 642 | ||
| RS Delivers | 177-9689 | 1 | 1 | 1 @ $0.81 | |
| Future Electronics | 4049319 | 2000 | 2000 | 2000 @ $0.47, 2000 @ $0.40, 3000 @ $0.39, 5000 @ $0.39, 10000 @ $0.38 | |
| Hotenda | H1813364 | 1 | 3022 | 1 | 1 @ $0.74, 25 @ $0.62, 100 @ $0.56 |
| Onlinecomponents.com | TN0106N3-G | 1 | 3164 | 1 | 1 @ $0.80, 200 @ $0.39, 250 @ $0.38, 500 @ $0.37, 1000 @ $0.37, 2500 @ $0.36 |
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Microchip Technology TN0106N3-G N-Channel 60 V 2 A 3 ? 1 W Through Hole Enhancement Mode MosFet TO-92-1000 Item(s)
Brand: MICROCHIP TECHNOLOGY
N-Channel 60 V 2 A 3 ? 1 W Through Hole Enhancement Mode MosFet TO-92 For more info refer to the specification sheet located in the 'Downloads' section below the image
Details
- ChannelType: N-Channel; VoltageDraintoSource: 60 V; Drain-sourceOnResistance-Max: 3 ?;
- RatedPowerDissipation(P): 1 W;
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Model | TN0106N3-G |
| Part number | TN0106N3-G |
| Items per pack | 1000 |
| Label | MICROCHIP TECHNOLOGY |
| Manufacturer | MICROCHIP TECHNOLOGY |
TN0106N3-G, Trans MOSFET N-CH Si 60V 0.35A 3-Pin TO-92 Bag (50 Items)
Brand: MICROCHIP TECHNOLOGY
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Model | TN0106N3-G |
| Part number | TN0106N3-G |
| Items per pack | 50 |
| Label | Microchip Technology |
| Manufacturer | Microchip Technology |
OEM Microchip Technology TN0106N3-G, Trans MOSFET N-CH Si 60V 0.35A 3-Pin TO-92 Bag (100 Items)
Brand: MICROCHIP TECHNOLOGY
EU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Material: Si Configuration: Single Process Technology: DMOS Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 60 Maximum Gate Source Voltage (V): ±20 Maximum Gate Threshold Voltage (V): 2 Maximum Continuous Drain Current (A): 0.35 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 10 Maximum Drain Source Resistance (MOhm): 3000@10V Typical Input Capacitance @ Vds (pF): 50@25V Maximum Power Dissipation (mW): 1000 Typical Fall Time (ns): 3 Typical Rise Time (ns): 3 Typical Turn-Off Delay Time (ns): 6 Typical Turn-On Delay Time (ns): 2 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Bag Supplier Package: TO-92 Pin Count: 3 Standard Package Name: TO-92 Mounting: Through Hole Package Height: 5.33(Max) Package Length: 5.21(Max) Package Width: 4.19(Max) PCB changed: 3