STMICROELECTRONICS . STGW50H60DF
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 87T3772 | 1 | 1 | ||
| JT25-STGW50H60DF | 1 | 100 | 1 | ||
 Digi-Key | 2864842 | 1 | 1 | ||
 swatee.com | STGW50H60DF | 1 | 297 | 1 | 1 @ $6.48 |
| Hotenda | H1848365 | 1 | 1 |
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IGBT Transistors 50A 600V FST IGBT Ultrafast Diode
Brand: STMicroelectronics
Catalog
| Feature | Manufacturer: STMicroelectronics Product Category: IGBT Transistors RoHS: Collector-Emitter Saturation Voltage: 1.8 V Maximum Gate Emitter Voltage: +/- 20 V Continuous Collector Current at 25 C: 100 A Gate-Emitter Leakage Current: 250 nA Power Dissipation: 360 W Maximum Operating Temperature: + 150 C Package / Case: TO-247 Packaging: Tube Minimum Operating Temperature: - 55 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | STGW50H60DF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | STMicroelectronics |
STGW50H60DF, Trans IGBT Chip N-CH 600V 100A 360000mW 3-Pin(3+Tab) TO-247 Tube (10 Items)
Brand: STMicroelectronics
STGW50H60DF, Trans IGBT Chip N-CH 600V 100A 360000mW 3-Pin(3+Tab) TO-247 Tube (10 items)