Vishay Mosfet, P Channel, -12V, -8A, Tsop-6, Full Reel - SI3477DV-T1-GE3

EU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Quad Drain Process Technology: TrenchFET Channel Mode: Enhancement Channel Type: P Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 12 Maximum Gate Source Voltage (V): ±10 Maximum Gate Threshold Voltage (V): 1 Operating Junction Temperature (°C): -55 to 150 Maximum Continuous Drain Current (A): 8 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 1 Maximum Drain Source Resistance (mOhm): 17.5@4.5V Typical Gate Charge @ Vgs (nC): 28.3@4.5V|58@10V Typical Gate Charge @ 10V (nC): 58 Typical Gate to Drain Charge (nC): 7.8 Typical Gate to Source Charge (nC): 4.2 Typical Reverse Recovery Charge (nC): 30 Typical Input Capacitance @ Vds (pF): 2600@6V Typical Reverse Transfer Capacitance @ Vds (pF): 625@6V Minimum Gate Threshold Voltage (V): 0.4 Typical Output Capacitance (pF): 620 Maximum Power Dissipation (mW): 2000 Typical Fall Time (ns): 35 Typical Rise Time (ns): 30 Typical Turn-Off Delay Time (ns): 65 Typical Turn-On Delay Time (ns): 25 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Maximum Power Dissipation on PCB @ TC=25°C (W): 2 Maximum Pulsed Drain Current @ TC=25°C (A): 40 Maximum Junction Ambient Thermal Resistance on PCB (°C/W): 110 Typical Diode Forward Voltage (V): 0.8 Typical Gate Plateau Voltage (V): 1.8 Typical Reverse Recovery Time (ns): 50 Maximum Diode Forward Voltage (V): 1.2 Minimum Gate Resistance (Ohm): 0.9 Maximum Gate Resistance (Ohm): 9 Maximum Positive Gate Source Voltage (V): 10 Maximum Continuous Drain Current on PCB @ TC=25°C (A): 8 Supplier Package: TSOP Pin Count: 6 Standard Package Name: SOP Mounting: Surface Mount Package Height: 1(Max) Package Length: 3.05 Package Width: 1.65 PCB changed: 6 Lead Shape: Gull-wing