STMICROELECTRONICS . STP13NM60ND
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 06X3711 | 1 | 1 | ||
| TME | STP13NM60ND | 1 | 1 | 1 @ $2.24, 5 @ $2.02, 25 @ $1.79, 100 @ $1.60, 500 @ $1.50 | |
| RS Delivers | 791-7801P | 1 | 1 | ||
| Digi-Key | 4250825 | 1000 | 109 | 1000 | 1 @ $4.17, 10 @ $3.74, 100 @ $3.07, 500 @ $2.61, 1000 @ $2.50 |
 iodParts | STP13NM60ND | 1 | 1 | ||
| Hotenda | H1821393 | 1 | 377 | 1 | 1 @ $3.79, 10 @ $3.40, 100 @ $2.79, 500 @ $2.37 |
| Future Electronics | 7051921 | 170 | 170 | 170 | 170 @ $1.88 |
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MOSFET N-CH 600V 0.32Ohm 11A FDMesh II (10 pieces)
Brand: STMicroelectronics
Catalog
| Feature | Manufacturer: STMicroelectronics RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 650 V Gate-Source Breakdown Voltage: +/- 25 V Continuous Drain Current: 11 A Drain-Source On Resistance: 380 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package / Case: TO-220-3 Packaging: Tube Fall Time: 15.4 ns Gate Charge Qg: 24.5 nC |
|---|---|
| Category | Industrial & Scientific |
| MPN | STP13NM60ND |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | STMicroelectronics |
MOSFET N-CH 600V 0.32Ohm 11A FDMesh II (100 pieces)
Brand: STMicroelectronics
Catalog
| Feature | Manufacturer: STMicroelectronics RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 650 V Gate-Source Breakdown Voltage: +/- 25 V Continuous Drain Current: 11 A Drain-Source On Resistance: 380 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package / Case: TO-220-3 Packaging: Tube Fall Time: 15.4 ns Gate Charge Qg: 24.5 nC |
|---|---|
| Category | Industrial & Scientific |
| MPN | STP13NM60ND |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | STMicroelectronics |
MOSFET N-CH 600V 0.32Ohm 11A FDMesh II (5 pieces)
Brand: STMicroelectronics
Catalog
| Feature | Manufacturer: STMicroelectronics RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 650 V Gate-Source Breakdown Voltage: +/- 25 V Continuous Drain Current: 11 A Drain-Source On Resistance: 380 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package / Case: TO-220-3 Packaging: Tube Fall Time: 15.4 ns Gate Charge Qg: 24.5 nC |
|---|---|
| Category | Industrial & Scientific |
| MPN | STP13NM60ND |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | STMicroelectronics |
MOSFET N-CH 600V 0.32Ohm 11A FDMesh II (50 pieces)
Brand: STMicroelectronics
Catalog
| Feature | Manufacturer: STMicroelectronics RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 650 V Gate-Source Breakdown Voltage: +/- 25 V Continuous Drain Current: 11 A Drain-Source On Resistance: 380 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package / Case: TO-220-3 Packaging: Tube Fall Time: 15.4 ns Gate Charge Qg: 24.5 nC |
|---|---|
| Category | Industrial & Scientific |
| MPN | STP13NM60ND |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | STMicroelectronics |
MOSFET N-CH 600V 0.32Ohm 11A FDMesh II (1 piece)
Brand: STMicroelectronics
Catalog
| Feature | Manufacturer: STMicroelectronics RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 650 V Gate-Source Breakdown Voltage: +/- 25 V Continuous Drain Current: 11 A Drain-Source On Resistance: 380 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package / Case: TO-220-3 Packaging: Tube Fall Time: 15.4 ns Gate Charge Qg: 24.5 nC |
|---|---|
| Category | Industrial & Scientific |
| MPN | STP13NM60ND |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | STMicroelectronics |
MOSFET N-CH 600V 0.32Ohm 11A FDMesh II
Brand: STMicroelectronics
Catalog
| Feature | Manufacturer: STMicroelectronics RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 650 V Gate-Source Breakdown Voltage: +/- 25 V Continuous Drain Current: 11 A Drain-Source On Resistance: 380 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package / Case: TO-220-3 Packaging: Tube Fall Time: 15.4 ns Gate Charge Qg: 24.5 nC |
|---|---|
| Category | Industrial & Scientific |
| MPN | STP13NM60ND |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | STMicroelectronics |
ST MICROELECTRONICS STP13NM60ND N-Channel 600 V 380 mOhm Flange Mount FDmesh II Plus Power Mosfet - TO-220-3 - 1000 item(s)
Brand: STMicroelectronics
N-Channel 600 V 380 mOhm Flange Mount FDmesh II Plus Power Mosfet - TO-220-3 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
- ChannelType: N-Channel
- VoltageDraintoSource: 600 V
- Drain-sourceOnResistance-Max: 380 mΩ
- QgGateCharge: 24.5 nC
- RatedPowerDissipation(P): 109 W
Listing
| Product group | BISS |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Model | STP13NM60ND |
| Part number | STP13NM60ND |
| Items per pack | 1000 |
| Label | ST MICROELECTRONICS |
| Manufacturer | ST MICROELECTRONICS |