Onsemi Sf2 600V 380Mohm E Dpak / Reel Rohs Compliant: Yes - FCD380N60E
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 63W2839 | 2500 | 2500 | 1 @ $1.32, 3000 @ $1.25, 6000 @ $1.18, 12000 @ $1.06, 18000 @ $1.03, 30000 @ $0.98 | |
| TME | FCD380N60E | 1 | 1 | ||
| Digi-Key | 3847321 | 1 | 1 | 1 @ $3.06, 10 @ $2.75, 100 @ $2.21, 500 @ $1.81, 1000 @ $1.50, 2500 @ $1.40, 5000 @ $1.35 | |
| Future Electronics | 4037015 | 2500 | 2500 | ||
| Digi-Key | 3847310 | 1 | 1529 | 1 | 1 @ $1.82, 10 @ $1.63, 25 @ $1.54, 100 @ $1.20, 500 @ $1.02, 1000 @ $0.86 |
| 774-1137 | 1 | 1 | |||
| Hotenda | H1810547 | 1 | 2500 | 1 | 1 @ $0.84 |
![]() Radwell | FCD380N60E | 2500 | -2 | 2500 | 1 @ $1.11 |
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MOSFET 600V N-Channel MOSFET (10 pieces)
Brand: Fairchild Semiconductor
Catalog
| Feature | Manufacturer: Fairchild Semiconductor RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 650 V Gate-Source Breakdown Voltage: 30 V Continuous Drain Current: 10.2 A Drain-Source On Resistance: 380 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: D-PAK Packaging: Reel Fall Time: 10 ns Forward Transconductance - Min: 10 S |
|---|---|
| Category | Industrial & Scientific |
| MPN | FCD380N60E |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Fairchild Semiconductor |
MOSFET 600V N-Channel MOSFET (100 pieces)
Brand: Fairchild Semiconductor
Catalog
| Feature | Manufacturer: Fairchild Semiconductor RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 650 V Gate-Source Breakdown Voltage: 30 V Continuous Drain Current: 10.2 A Drain-Source On Resistance: 380 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: D-PAK Packaging: Reel Fall Time: 10 ns Forward Transconductance - Min: 10 S |
|---|---|
| Category | Industrial & Scientific |
| MPN | FCD380N60E |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Fairchild Semiconductor |
MOSFET 600V N-Channel MOSFET (5 pieces)
Brand: Fairchild Semiconductor
Catalog
| Feature | Manufacturer: Fairchild Semiconductor RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 650 V Gate-Source Breakdown Voltage: 30 V Continuous Drain Current: 10.2 A Drain-Source On Resistance: 380 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: D-PAK Packaging: Reel Fall Time: 10 ns Forward Transconductance - Min: 10 S |
|---|---|
| Category | Industrial & Scientific |
| MPN | FCD380N60E |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Fairchild Semiconductor |
MOSFET 600V N-Channel MOSFET (50 pieces)
Brand: Fairchild Semiconductor
Catalog
| Feature | Manufacturer: Fairchild Semiconductor RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 650 V Gate-Source Breakdown Voltage: 30 V Continuous Drain Current: 10.2 A Drain-Source On Resistance: 380 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: D-PAK Packaging: Reel Fall Time: 10 ns Forward Transconductance - Min: 10 S |
|---|---|
| Category | Industrial & Scientific |
| MPN | FCD380N60E |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Fairchild Semiconductor |
MOSFET 600V N-Channel MOSFET (500 pieces)
Brand: Fairchild Semiconductor
Catalog
| Feature | Manufacturer: Fairchild Semiconductor RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 650 V Gate-Source Breakdown Voltage: 30 V Continuous Drain Current: 10.2 A Drain-Source On Resistance: 380 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: D-PAK Packaging: Reel Fall Time: 10 ns Forward Transconductance - Min: 10 S |
|---|---|
| Category | Industrial & Scientific |
| MPN | FCD380N60E |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Fairchild Semiconductor |
MOSFET 600V N-Channel MOSFET (1 piece)
Brand: Fairchild Semiconductor
Catalog
| Feature | Manufacturer: Fairchild Semiconductor RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 650 V Gate-Source Breakdown Voltage: 30 V Continuous Drain Current: 10.2 A Drain-Source On Resistance: 380 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: D-PAK Packaging: Reel Fall Time: 10 ns Forward Transconductance - Min: 10 S |
|---|---|
| Category | Industrial & Scientific |
| MPN | FCD380N60E |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Fairchild Semiconductor |
FAIRCHILD (ON SEMICONDUCTOR) FCD380N60E N-Channel 600 V 380 m? Surface Mount SuperFET II Easy Drive Mosfet -TO-252 - 2500 item(s)
Brand: FAIRCHILD (ON SEMICONDUCTOR)
N-Channel 600 V 380 m? Surface Mount SuperFET II Easy Drive Mosfet -TO-252 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
- ChannelType: N-Channel
- VoltageDraintoSource: 600 V
- Drain-sourceOnResistance-Max: 380 mΩ
- QgGateCharge: 34 nC
- RatedPowerDissipation(P): 106 W
Listing
| Product group | BISS |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Model | FCD380N60E |
| Part number | FCD380N60E |
| Items per pack | 2500 |
| Label | FAIRCHILD (ON SEMICONDUCTOR) |
| Manufacturer | FAIRCHILD (ON SEMICONDUCTOR) |
Catalog
| Feature | ChannelType: N-Channel |
|---|---|
| Category | Industrial & Scientific |
| MPN | FCD380N60E |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | FAIRCHILD (ON SEMICONDUCTOR) |
FCD380N60E, Trans MOSFET N-CH 600V 10.2A 3-Pin(2+Tab) DPAK T/R (25 Items)
Brand: ON Semiconductor
FCD380N60E, Trans MOSFET N-CH 600V 10.2A 3-Pin(2+Tab) DPAK T/R (25 items)
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Model | FCD380N60E |
| Part number | FCD380N60E |
| Items per pack | 25 |
| Label | ON Semiconductor |
| Manufacturer | ON Semiconductor |
