VISHAY . SI7115DN-T1-E3

EU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.21.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Quad Drain Triple Source Process Technology: TrenchFET Channel Mode: Enhancement Channel Type: P Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 150 Maximum Gate Source Voltage (V): ±20 Maximum Continuous Drain Current (A): 8.9 Maximum Drain Source Resistance (mOhm): 295@10V Typical Gate Charge @ Vgs (nC): 23.2@6V|27.5@10V Typical Gate Charge @ 10V (nC): 27.5 Typical Input Capacitance @ Vds (pF): 1190@50V Maximum Power Dissipation (mW): 3700 Typical Fall Time (ns): 35|34 Typical Rise Time (ns): 28|95 Typical Turn-Off Delay Time (ns): 52|38 Typical Turn-On Delay Time (ns): 20|11 Minimum Operating Temperature (°C): -50 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Supplier Package: PowerPAK 1212 Pin Count: 8 Standard Package Name: PowerPAK 1212 Mounting: Surface Mount Package Height: 1.07(Max) Package Length: 3.05 Package Width: 3.05 PCB changed: 8 Lead Shape: No Lead