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IXFN106N20 IXYS Transistors - Jotrin Electronics

IXYS Corporation . IXFN106N20

Gallery

Attributes

Brand name, Manufacturer name, ManufacturerIXYS Corporation
Attribute00, Attribute08SOT-227B
Attribute01MOSFET
Attribute02Green
Attribute03, qtyInStock2500
Attribute040.02 Ohms
Attribute05Single Dual Source
Attribute06+ 150 C
Attribute07SMD/SMT
Attribute09Tube
Attribute1030 ns
Attribute1160 s
Attribute12- 55 C
Attribute13520 W
Attribute1480 ns
Attribute1510
Attribute1675 ns
AttributeKey00Package/Case
AttributeKey01Product Categories
AttributeKey02RoHs Status
AttributeKey03In-stock
AttributeKey04Resistance Drain Source RDS (on)
AttributeKey05Configuration
AttributeKey06Maximum Operating Temperature
AttributeKey07Mounting Style
AttributeKey08Package / Case
AttributeKey09Packaging
AttributeKey10Fall Time
AttributeKey11Forward Transconductance gFS (Max / Min)
AttributeKey12Minimum Operating Temperature
AttributeKey13Power Dissipation
AttributeKey14Rise Time
AttributeKey15Factory Pack Quantity
AttributeKey16Typical Turn Off Delay Time
Extra Product NameIXFN106N20 IXYS Transistors - Jotrin Electronics
keywordsIXFN106N20,IXYS,SOT-227B,MOSFET,IXFN106N20 Datasheet PDF
moq, multiple1
MPNIXFN106N20
SKUJT25-IXFN106N20
snippetBuy IXFN106N20 IXYS , Learn more about IXFN106N20 N-Channel Enhancement Mode HiPerFET Power MOSFET (maximum drain-source breakdown voltage of 200V, resistance 20m? HiPerFET N-channel enhancement mode power MOSFET) ,MOSFET 200V 106A, View the manufacturer, and stock, and datasheet pdf for the IXFN106N20 at Jotrin Electronics.

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