VISHAY . SIHP12N60E-E3
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 99W9494 | 1 | 1 | ||
![]() Galco | SIHP12N60E-E3-VISH | 1000 | 1000 | 1 @ $1.18 | |
| Digi-Key | 2799081 | 1 | 1 | 1 @ $3.23, 10 @ $2.91, 100 @ $2.33, 500 @ $1.92, 1000 @ $1.59, 2000 @ $1.48, 5000 @ $1.43 | |
| Future Electronics | 4016746 | 1000 | 1000 | ||
| Win Source | SIHP12N60E-E3 | 1 | 66 | 1 | |
| Hotenda | H1823570 | 1 | 1 |
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MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS
Catalog
| Category | Industrial & Scientific |
|---|---|
| MPN | SIHP12N60E-E3 |
| Manufacturer | Vishay / Siliconix |
MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS (10 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 12 A Rds On - Drain-Source Resistance: 380 mOhms Configuration: Single Qg - Gate Charge: 29 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 147 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | SIHP12N60E-E3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS (100 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 12 A Rds On - Drain-Source Resistance: 380 mOhms Configuration: Single Qg - Gate Charge: 29 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 147 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | SIHP12N60E-E3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS (5 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 12 A Rds On - Drain-Source Resistance: 380 mOhms Configuration: Single Qg - Gate Charge: 29 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 147 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | SIHP12N60E-E3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS (50 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 12 A Rds On - Drain-Source Resistance: 380 mOhms Configuration: Single Qg - Gate Charge: 29 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 147 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | SIHP12N60E-E3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS (500 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 12 A Rds On - Drain-Source Resistance: 380 mOhms Configuration: Single Qg - Gate Charge: 29 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 147 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | SIHP12N60E-E3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS (1 piece)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 12 A Rds On - Drain-Source Resistance: 380 mOhms Configuration: Single Qg - Gate Charge: 29 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 147 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | SIHP12N60E-E3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
