Vishay N Channel Mosfet, 100V, 1.8A, Tsop, Full Reel - SI3430DV-T1-E3
Gallery
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
![]() Newark | 65K1923 | 3000 | 3000 | 2000 @ $0.57, 4000 @ $0.51, 6000 @ $0.49, 10000 @ $0.48 | |
| Newark | 15AC0293 | 1 | 1 | ||
![]() jotrin.com | JT25-SI3430DV-T1-E3 | 1 | 410 | 1 | |
| 3430DV-T1-E3-VIS | 1 | 920 | 1 | 1 @ $3.08, 50 @ $2.62, 100 @ $2.31, 500 @ $2.15, 1000 @ $2.00 | |
| Bristol Electronics | SI3430DV-T1-E3 | 1 | 2410 | 1 | |
| Freelance Electronics | SI3430DV-T1-E3 | 1 | 20 | 1 | 1 @ $0.31 |
| 1Source | SI3430DV-T1-E3 | 1 | 1 | ||
![]() Radwell | SI3430DV-T1-E3 | 3000 | 3000 | ||
| Digi-Key | 1764702 | 1 | 1 | 1 @ $1.51, 10 @ $1.34, 100 @ $1.05, 500 @ $0.87, 1000 @ $0.68, 3000 @ $0.68 | |
| 710-3272 | 1 | 1 | |||
| Future Electronics | 6885719 | 1 | 1 | 1 @ $0.93, 250 @ $0.67, 500 @ $0.64, 750 @ $0.62, 1500 @ $0.60 | |
| Hotenda | H1806866 | 1 | 3212 | 1 | 1 @ $0.89, 10 @ $0.80, 25 @ $0.76, 100 @ $0.62, 250 @ $0.58, 500 @ $0.51 |
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MOSFET 100V 8A 2W (10 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 2.4 A Rds On - Drain-Source Resistance: 170 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.14 W Mounting Style: SMD/SMT Package / Case: TSOP-6 |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI3430DV-T1-E3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET 100V 8A 2W (100 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 2.4 A Rds On - Drain-Source Resistance: 170 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.14 W Mounting Style: SMD/SMT Package / Case: TSOP-6 |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI3430DV-T1-E3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET 100V 8A 2W (5 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 2.4 A Rds On - Drain-Source Resistance: 170 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.14 W Mounting Style: SMD/SMT Package / Case: TSOP-6 |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI3430DV-T1-E3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET 100V 8A 2W (50 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 2.4 A Rds On - Drain-Source Resistance: 170 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.14 W Mounting Style: SMD/SMT Package / Case: TSOP-6 |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI3430DV-T1-E3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET 100V 8A 2W (500 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 2.4 A Rds On - Drain-Source Resistance: 170 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.14 W Mounting Style: SMD/SMT Package / Case: TSOP-6 |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI3430DV-T1-E3 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Vishay / Siliconix |
MOSFET 100V 8A 2W (1 piece)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 2.4 A Rds On - Drain-Source Resistance: 170 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.14 W Mounting Style: SMD/SMT Package / Case: TSOP-6 |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI3430DV-T1-E3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
SILICONIX (VISHAY) SI3430DV-T1-E3 Single N-Channel 100 V 0.17 Ohms Surface Mount Power Mosfet - TSOP-6 - 3000 item(s)
Brand: SILICONIX (VISHAY)
Single N-Channel 100 V 0.17 Ohms Surface Mount Power Mosfet - TSOP-6 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
- ChannelType: N-Channel; VoltageDraintoSource: 100 V; Drain-sourceOnResistance-Max: 0.17 ?;
- QgGateCharge: 6.6 nC; RatedPowerDissipation(P): 1.14 W;
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Model | SI3430DV-T1-E3 |
| Part number | SI3430DV-T1-E3 |
| Items per pack | 3000 |
| Label | SILICONIX (VISHAY) |
| Manufacturer | SILICONIX (VISHAY) |
Catalog
| Feature | ChannelType: N-Channel; VoltageDraintoSource: 100 V; Drain-sourceOnResistance-Max: 0.17 ?; |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI3430DV-T1-E3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | SILICONIX (VISHAY) |

