As an Amazon Associate, we earn from qualifying purchases.

VISHAY SIJ482DP-T1-GE3 | Transistor: N-MOSFET

VISHAY . SIJ482DP-T1-GE3

Attributes

Brand name, Manufacturer name, Attribute00VISHAY
ManufacturerVISHAY Vishay
Attribute01N-MOSFET
AttributeKey00Manufacturer
AttributeKey01Type of transistor
CategoryL1Semiconductors
CategoryL2Transistors
CategoryL3Unipolar transistors
CategoryL4N channel transistors
Extra Product NameVISHAY SIJ482DP-T1-GE3 | Transistor: N-MOSFET
atoms1
jsonUrlData3737b541ed1cb84e0abde0d041fe7ef5.
jsonUrlData222a842f168c57f11881a
keywordsVISHAY, SIJ482DP-T1-GE3
moq, multiple, tierMinQty13000
MPN, SKU, Keyword, ModelNumber, Model_number, PartNumber, Part_numberSIJ482DP-T1-GE3
qtyInStock0
snippetVISHAY SIJ482DP-T1-GE3 | Transistor: N-MOSFE
tierPrice11.13
AdultProduct, Autographed, Memorabilia, TradeInEligibleFalse
AsinB09T5PPBQZ
Brand, MaterialVishay
ClassificationId306919011
DisplayNameMOSFET
Externally_assigned_product_identifier, Identifier6098001110143
FetchTime1705110357
Height, Width150 75
IdentifierTypeEAN
ItemClassificationBASE_PRODUCT
ItemName, Item_nameVishay SIJ482DP-T1-GE3, Trans MOSFET N-CH 80V 60A 5-Pin(4+Tab) PowerPAK SO EP T/R (25 Items)
Item_type_keywordmosfet-transistors
Linkhttps://m.media-amazon.com/images/I/11LVDACYdhL._SL75_.jpg https://m.media-amazon.com/images/I/11LVDACYdhL.jpg
Marketplace_idATVPDKIKX0DER
Number_of_items25
ProductTypeELECTRONIC_COMPONENT
Product_descriptionEU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Triple Source Process Technology: TrenchFET Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 80 Maximum Gate Source Voltage (V): ±20 Maximum Gate Threshold Voltage (V): 2.7 Maximum Continuous Drain Current (A): 60 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 1 Maximum Drain Source Resistance (mOhm): 6.2@10V Typical Gate Charge @ Vgs (nC): 24@4.5V|36.5@7.5V|47@10V Typical Gate Charge @ 10V (nC): 47 Typical Input Capacitance @ Vds (pF): 2425@40V Maximum Power Dissipation (mW): 5000 Typical Fall Time (ns): 9 Typical Rise Time (ns): 11 Typical Turn-Off Delay Time (ns): 36 Typical Turn-On Delay Time (ns): 14 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Maximum Positive Gate Source Voltage (V): 20 Maximum Continuous Drain Current on PCB @ TC=25°C (A): 21.1 Maximum Power Dissipation on PCB @ TC=25°C (W): 5 Maximum Junction Ambient Thermal Resistance on PCB (°C/W): 65 Typical Diode Forward Voltage (V): 0.73 Typical Gate Plateau Voltage (V): 2.9 Typical Reverse Recovery Time (ns): 46 Maximum Diode Forward Voltage (V): 1.1 Minimum Gate Resistance (Ohm): 0.4 Maximum Gate Resistance (Ohm): 2.2 Supplier Package: PowerPAK SO EP Pin Count: 5 Standard Package Name: SOP Mounting: Surface Mount Package Height: 1.07 Package Length: 4.9 Package Width: 4.37 PCB changed: 4 Tab: Tab Lead Shape: Gull-wing
Product_site_launch_date2022-02-15T19:38:08.707Z
Typeean
VariantMAIN
WebsiteDisplayGroupbiss_basic_display_on_website
WebsiteDisplayGroupNameBISS Basic

Distributor offers

SellerSKUMOQIn stockMultiplePrices
TMESIJ482DP-T1-GE3300030003000 @ $1.13
RS Delivers787-931711
AmazonSCB00LWM63A611
Future Electronics4025156300030003000 @ $0.81
Mouser78-SIJ482DP-T1-GE310261 @ $1.80, 10 @ $1.45, 50 @ $1.45, 100 @ $1.16, 1000 @ $0.84, 10000 @ $0.69
Future ElectronicsSIJ482DP-T1-GE330003000 @ $0.83
TTISIJ482DP-T1-GE3
Farnell228367111 @ $1.14, 25 @ $0.98, 100 @ $0.89, 250 @ $0.81, 500 @ $0.67
RS Components78793172015
Avnet EuropeSIJ482DP-T1-GE330003000 @ $0.86, 6000 @ $0.80

Related on Amazon

As an Amazon Associate, we earn from qualifying purchases. (paid link) CERTAIN CONTENT THAT APPEARS ON THIS SITE COMES FROM AMAZON. THIS CONTENT IS PROVIDED 'AS IS' AND IS SUBJECT TO CHANGE OR REMOVAL AT ANY TIME.

Vishay SIJ482DP-T1-GE3, Trans MOSFET N-CH 80V 60A 5-Pin(4+Tab) PowerPAK SO EP T/R (25 Items)
Brand: Vishay
EU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Triple Source Process Technology: TrenchFET Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 80 Maximum Gate Source Voltage (V): ±20 Maximum Gate Threshold Voltage (V): 2.7 Maximum Continuous Drain Current (A): 60 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 1 Maximum Drain Source Resistance (mOhm): 6.2@10V Typical Gate Charge @ Vgs (nC): 24@4.5V|36.5@7.5V|47@10V Typical Gate Charge @ 10V (nC): 47 Typical Input Capacitance @ Vds (pF): 2425@40V Maximum Power Dissipation (mW): 5000 Typical Fall Time (ns): 9 Typical Rise Time (ns): 11 Typical Turn-Off Delay Time (ns): 36 Typical Turn-On Delay Time (ns): 14 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Maximum Positive Gate Source Voltage (V): 20 Maximum Continuous Drain Current on PCB @ TC=25°C (A): 21.1 Maximum Power Dissipation on PCB @ TC=25°C (W): 5 Maximum Junction Ambient Thermal Resistance on PCB (°C/W): 65 Typical Diode Forward Voltage (V): 0.73 Typical Gate Plateau Voltage (V): 2.9 Typical Reverse Recovery Time (ns): 46 Maximum Diode Forward Voltage (V): 1.1 Minimum Gate Resistance (Ohm): 0.4 Maximum Gate Resistance (Ohm): 2.2 Supplier Package: PowerPAK SO EP Pin Count: 5 Standard Package Name: SOP Mounting: Surface Mount Package Height: 1.07 Package Length: 4.9 Package Width: 4.37 PCB changed: 4 Tab: Tab Lead Shape: Gull-wing
View on Amazon (paid link)