VISHAY . SIHG22N60S-E3
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 74R0208 | 1 | 1 | ||
![]() Galco | SIHG22N60S-E3-VISH | 500 | 500 | 1 @ $1.93 | |
| 1Source | SIHG22N60S-E3 | 1 | 1 | ||
![]() Radwell | SIHG22N60S-E3 | 500 | 500 | ||
| Digi-Key | 2207320 | 1 | 1 | ||
| Win Source | SIHG22N60S-E3 | 1 | 127 | 1 |
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MOSFET 600V N-Channel Superjunction TO-247 (10 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 22 A Rds On - Drain-Source Resistance: 160 mOhms Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 75 nC Pd - Power Dissipation: 250 W Mounting Style: Through Hole |
|---|---|
| Category | Industrial & Scientific |
| MPN | SIHG22N60S-E3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET 600V N-Channel Superjunction TO-247 (5 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 22 A Rds On - Drain-Source Resistance: 160 mOhms Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 75 nC Pd - Power Dissipation: 250 W Mounting Style: Through Hole |
|---|---|
| Category | Industrial & Scientific |
| MPN | SIHG22N60S-E3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET 600V N-Channel Superjunction TO-247 (50 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | <b>Pack of:</b> 50 |
|---|---|
| Category | Industrial & Scientific |
| MPN | SIHG22N60S-E3 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Vishay / Siliconix |
MOSFET 600V N-Channel Superjunction TO-247 (1 piece)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 600 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 22 A Rds On - Drain-Source Resistance: 160 mOhms Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 75 nC Pd - Power Dissipation: 250 W Mounting Style: Through Hole |
|---|---|
| Category | Industrial & Scientific |
| MPN | SIHG22N60S-E3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
VISHAY SILICONIX SIHG22N60S-E3 MOSFET, N CH, 600V, 22A, TO-247-3
Brand: Vishay / Siliconix
Catalog
| Feature | <b>Price For:</b> Each\xa01 |
|---|---|
| Category | Industrial & Scientific |
| MPN | SIHG22N60S-E3 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | VISHAY SILICONIX |

