Nexperia Mosfet, N-Ch, 30V, 120A, To-220Ab Rohs Compliant: Yes - PSMN1R1-30PL,127
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Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
![]() Newark | 74AH1189 | 1 | 4665 | 1 | 1 @ $4.36, 10 @ $3.66, 25 @ $3.42, 50 @ $3.19, 100 @ $2.96, 250 @ $2.80, 500 @ $2.63, 1000 @ $2.26 |
| PSMN1R1-30PL.127 | 1 | 40 | 1 | 1 @ $5.38, 3 @ $4.83, 10 @ $4.27, 50 @ $3.84 | |
| Digi-Key | 13443851 | 1 | 4165 | 1 | 1 @ $3.69, 10 @ $3.32, 100 @ $2.72, 500 @ $2.31, 1000 @ $2.09 |
![]() Radwell | PSMN1R1-30PL,127 | 5000 | 5000 | 1 @ $2.75 | |
| Amazon | B00M2DVAD4 | 1 | 1 | ||
| AmazonSC | B07CJTXW65 | 1 | -2 | 1 | 1 @ $194.13 |
| iodParts | PSMN1R1-30PL,127 | 200 | 350 | 200 | 200 @ $1.51 |
![]() AmazonTP | B07WF9MG7B | 1 | 1 | 1 @ $61.20 | |
| Hotenda | H1814321 | 1 | 1924 | 1 | 1 @ $2.83, 10 @ $2.54, 100 @ $2.08, 500 @ $1.77 |
| Digi-Key | 568-6719-5-ND | 1 | 50 | 1 @ $2.83, 10 @ $2.54, 100 @ $2.08, 500 @ $1.77, 1000 @ $1.49 |
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MOSFET N-Ch 30V 1.3 mOhms (10 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 120 A Rds On - Drain-Source Resistance: 1.3 mOhms Vgs th - Gate-Source Threshold Voltage: 1.7 V Qg - Gate Charge: 243 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 338 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | PSMN1R1-30PL,127 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET N-Ch 30V 1.3 mOhms (100 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 120 A Rds On - Drain-Source Resistance: 1.3 mOhms Vgs th - Gate-Source Threshold Voltage: 1.7 V Qg - Gate Charge: 243 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 338 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | PSMN1R1-30PL,127 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET N-Ch 30V 1.3 mOhms (5 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 120 A Rds On - Drain-Source Resistance: 1.3 mOhms Vgs th - Gate-Source Threshold Voltage: 1.7 V Qg - Gate Charge: 243 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 338 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | PSMN1R1-30PL,127 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET N-Ch 30V 1.3 mOhms (50 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 120 A Rds On - Drain-Source Resistance: 1.3 mOhms Vgs th - Gate-Source Threshold Voltage: 1.7 V Qg - Gate Charge: 243 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 338 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | PSMN1R1-30PL,127 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET N-Ch 30V 1.3 mOhms (500 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 120 A Rds On - Drain-Source Resistance: 1.3 mOhms Vgs th - Gate-Source Threshold Voltage: 1.7 V Qg - Gate Charge: 243 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 338 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | PSMN1R1-30PL,127 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | NXP Semiconductors |
PSMN1R1-30PL127
Brand: NXP Semiconductors
Listing
| Product group | Home Improvement |
|---|---|
| Product type | HARDWARE |
| Model | PSMN1R1-30PL,127 |
| Part number | PSMN1R1-30PL,127 |
| Label | NXP Semiconductors |
| Manufacturer | NXP Semiconductors |
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 120 A Rds On - Drain-Source Resistance: 1.3 mOhms Vgs th - Gate-Source Threshold Voltage: 1.7 V Qg - Gate Charge: 243 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 338 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | PSMN1R1-30PL,127 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
NEXPERIA PSMN1R1-30PL,127 PSMN1R1 Series 30 V 1.3 mOhm N-Channel Logic Level MOSFET - TO-220-3 - 50 item(s)
Brand: NEXPERIA
PSMN1R1 Series 30 V 1.3 mOhm N-Channel Logic Level MOSFET - TO-220-3 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Model | PSMN1R1-30PL,127 |
| Part number | PSMN1R1-30PL,127 |
| Items per pack | 50 |
| Label | NEXPERIA |
| Manufacturer | NEXPERIA |
PSMN1R1-30PL,127, Trans MOSFET N-CH 30V 120A 3-Pin(3+Tab) TO-220AB Rail (10 Items)
Brand: NEXPERIA
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Model | PSMN1R1-30PL,127 |
| Part number | PSMN1R1-30PL,127 |
| Items per pack | 10 |
| Label | Nexperia |
| Manufacturer | Nexperia |

