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Vishay Dual N/p Channel Mosfet, 20V, 1206 - SI5515CDC-T1-E3

VISHAY . SI5515CDC-T1-E3

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Attributes

Brand name, Manufacturer nameVISHAY
ManufacturerVISHAY SILICONIX (VISHAY) Vishay Siliconix
CategoryL1Semiconductors - Discretes
CategoryL2FETs
CategoryL3Dual MOSFETs
Extra Product NameVishay Dual N/p Channel Mosfet, 20V, 1206 - SI5515CDC-T1-E3
jsonUrlDataSemiconductors - Discretes > FETs > Dual MOSFETs
moq, multiple, Number_of_items3000
MPN, Part Number, Model, ModelNumber, Model_number, PartNumber, Part_numberSI5515CDC-T1-E3
qtyInStock, tierPrice10
SKU16P3787
tierMinQty1, Item_package_quantity, PackageQuantity1
urlhttps://www.newark.com/16P3787?CMP=AFC-DATAALCHEMY
UPC, EAN, EANList, UPCList645220973484
Product Group, ProductGroupBISS
AdultProduct, Autographed, Memorabilia, TradeInEligibleFalse
AsinB071PCYWD5 B07D8Z18FK
BrandSILICONIX (VISHAY) Vishay / Siliconix
Bullet_pointChannelType: Dual N/P-Ch Drain-sourceOnResistance-Max: 0.05 ? / 0.156 ?RatedPowerDissipation(P): 2.1 W / 1.3 W; QgGateCharge: 11.3 nC / 11 nC; GateSourceVoltageMax: 8 V; DrainCurrent-Max(ID): 3.1 A / 4 A; Turn-onTime-Nom(ton): 7 ns / 10 ns; Turn-offTime-Nom(toff): 30 LowInputCapacitance: 632 pF / 455 pF Noofchannels: 2 VoltageDraintoSource: 20 V
Case, NumberOfItems10
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011
ClassificationId306919011
DisplayNameMOSFET
FeatureMOSFET N/P-CH 20V 4A 1206-8
FetchTime1714865914
Height243 56
ItemClassificationBASE_PRODUCT
ItemName, Item_nameSILICONIX (VISHAY) SI5515CDC-T1-E3 Dual N/P-Channel 20 V 2.1/1.3 W 11.3/11 nC Silicon SMT Mosfet - 1206-8 ChipFET - 3000 item(s)
Item_type_keywordmosfet-transistors
Item_weight0.1
Keyword1206-8
Label, Man, Publisher, StudioVishay Siliconix
Linkhttps://m.media-amazon.com/images/I/21qicjq3AsL._SL75_.jpg https://m.media-amazon.com/images/I/21qicjq3AsL.jpg
Marketplace_idATVPDKIKX0DER
ProductType, ProductTypeNameELECTRONIC_COMPONENT
Product_descriptionDual N/P-Channel 20 V 2.1/1.3 W 11.3/11 nC Silicon SMT Mosfet - 1206-8 ChipFET ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Product_site_launch_date2018-05-24T15:15:41.691Z
TitleDiscrete Semiconductor Products Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 4A 1206-8
Unitgrams pounds
VariantMAIN
WebsiteDisplayGroupbiss_basic_display_on_website
WebsiteDisplayGroupNameBISS Basic
Weight0.000220462262
Width323 75

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Newark16P3787300030001 @ $0.00
RadwellSI5515CDC-T1-E330003000
1SourceSI5515CDC-T1-E311
Digi-Key6595309100010001 @ $1.00, 10 @ $0.88, 100 @ $0.67, 500 @ $0.53, 1000 @ $0.43
Future Electronics51179931597811 @ $0.71, 250 @ $0.52, 500 @ $0.49, 750 @ $0.48, 1500 @ $0.47
Win SourceSI5515CDC-T1-E31701
HotendaH180059211

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Discrete Semiconductor Products Transistors - FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 4A 1206-8
Brand: Vishay / Siliconix
Catalog
FeatureMOSFET N/P-CH 20V 4A 1206-8
CategoryIndustrial & Scientific
MPNSI5515CDC-T1-E3
UPC645220973484
EAN645220973484
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVishay Siliconix
View on Amazon (paid link)
SILICONIX (VISHAY) SI5515CDC-T1-E3 Dual N/P-Channel 20 V 2.1/1.3 W 11.3/11 nC Silicon SMT Mosfet - 1206-8 ChipFET - 3000 item(s)
Brand: SILICONIX (VISHAY)
Dual N/P-Channel 20 V 2.1/1.3 W 11.3/11 nC Silicon SMT Mosfet - 1206-8 ChipFET ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
  • ChannelType: Dual N/P-Ch
  • LowInputCapacitance: 632 pF / 455 pF
  • Noofchannels: 2
  • VoltageDraintoSource: 20 V
  • Drain-sourceOnResistance-Max: 0.05 ? / 0.156 ?RatedPowerDissipation(P): 2.1 W / 1.3 W; QgGateCharge: 11.3 nC / 11 nC; GateSourceVoltageMax: 8 V; DrainCurrent-Max(ID): 3.1 A / 4 A; Turn-onTime-Nom(ton): 7 ns / 10 ns; Turn-offTime-Nom(toff): 30
View on Amazon (paid link)