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Vishay N Channel Mosfet, 30V, 60A, Soic, Full Reel - SI7192DP-T1-GE3

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Attributes

Brand name, Manufacturer nameVISHAY
ManufacturerVISHAY SILICONIX (VISHAY) Vishay Vishay / Siliconix
CategoryL1Semiconductors - Discretes
CategoryL2FETs
CategoryL3Single MOSFETs
Extra Product NameVishay N Channel Mosfet, 30V, 60A, Soic, Full Reel - SI7192DP-T1-GE3
jsonUrlDataSemiconductors - Discretes > FETs > Single MOSFETs
moq, multiple, NumberOfItems3000
MPN, Part Number, Model, ModelNumber, Model_number, PartNumber, Part_numberSI7192DP-T1-GE3
qtyInStock0
SKU09P2626
tierMinQty12000
tierMinQty24000
tierMinQty38000
tierMinQty412000
tierMinQty520000
tierPrice11.79
tierPrice21.67
tierPrice31.55
tierPrice41.5
tierPrice51.47
urlhttps://www.newark.com/09P2626?CMP=AFC-DATAALCHEMY
Product GroupBISS
ASINB0748LLXPV
AdultProduct, Autographed, Batteries_required, Memorabilia, TradeInEligibleFalse
AsinB00LWQCY82 B00LWQCZ9K B00LWQD0FI B00LWQD1IO B00LWQD2J2 B00M2EJ634 B0748LLXPV B09T5RMZCN
BrandSILICONIX (VISHAY) Vishay Vishay / Siliconix
Bullet_pointChannelType: N-Channel Drain-sourceOnResistance-Max: 0.0019 Ω QgGateCharge: 135 nC RatedPowerDissipation(P): 104 W VoltageDraintoSource: 30 V
Case1 10 100 3000 5 50 500
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 781-SI7192DP-T1-GE3 X1 MS 781-SI7192DP-T1-GE3 X10 MS 781-SI7192DP-T1-GE3 X100 MS 781-SI7192DP-T1-GE3 X5 MS 781-SI7192DP-T1-GE3 X50 MS 781-SI7192DP-T1-GE3 X500
ClassificationId306506011 306919011
DisplayNameIndustrial Electrical MOSFET
Externally_assigned_product_identifier, Identifier6098000644670
FeatureChannelType: N-Channel Manufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 60 A Rds On - Drain-Source Resistance: 1.85 mOhms Configuration: Single Quad Drain Triple Source Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 6.25 W Mounting Style: SMD/SMT
FetchTime1542552399 1660643197 1704476825 1714738908
Height150 243 56 75
IdentifierTypeEAN
ItemClassificationBASE_PRODUCT
ItemName, Item_nameSI7192DP-T1-GE3, Trans MOSFET N-CH 30V 42A 8-Pin PowerPAK SO EP T/R (25 Items) SILICONIX (VISHAY) SI7192DP-T1-GE3 SI7192DP - N-Channel 30 V 1.9 m? 104 W TrenchFET GEN III Mosfet - PPAKSO-8 - 3000 item(s)
Item_package_quantity1
Item_type_keywordelectronic-components mosfet-transistors
Item_weight0.33
Keyword1910V SI7192DP-T1-GE3
Label, Man, Publisher, StudioSILICONIX (VISHAY) Vishay / Siliconix
Linkhttps://m.media-amazon.com/images/I/11LILwBWaNL._SL75_.jpg https://m.media-amazon.com/images/I/11LILwBWaNL.jpg https://m.media-amazon.com/images/I/11v9ZRB5vnL._SL75_.jpg https://m.media-amazon.com/images/I/11v9ZRB5vnL.jpg
Marketplace_idATVPDKIKX0DER
Number_of_items25 3000
PackageQuantity1 10 100 5 50 500
ProductGroupBISS BISS Basic
ProductType, ProductTypeNameBISS ELECTRONIC_COMPONENT
Product_descriptionEU RoHS: Compliant with Exemption ECCN (US): EAR99 Part Status: NRND HTS: 8541.29.00.95 SVHC: Yes SVHC Exceeds Threshold: Yes Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Quad Drain Triple Source Process Technology: TrenchFET Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 30 Maximum Gate Source Voltage (V): ±20 Maximum Gate Threshold Voltage (V): 2.5 Operating Junction Temperature (°C): -55 to 150 Maximum Continuous Drain Current (A): 42 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 1 Maximum Drain Source Resistance (mOhm): 1.9@10V Typical Gate Charge @ Vgs (nC): 90@10V|43.5@4.5V Typical Gate Charge @ 10V (nC): 90 Typical Gate to Drain Charge (nC): 12.5 Typical Gate to Source Charge (nC): 14 Typical Reverse Recovery Charge (nC): 50 Typical Input Capacitance @ Vds (pF): 5800@15V Typical Reverse Transfer Capacitance @ Vds (pF): 440@15V Minimum Gate Threshold Voltage (V): 1 Typical Output Capacitance (pF): 1050 Maximum Power Dissipation (mW): 6250 Typical Fall Time (ns): 32 Typical Rise Time (ns): 26 Typical Turn-Off Delay Time (ns): 86 Typical Turn-On Delay Time (ns): 41 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Maximum Power Dissipation on PCB @ TC=25°C (W): 6.25 Maximum Pulsed Drain Current @ TC=25°C (A): 100 Maximum Junction Ambient Thermal Resistance on PCB (°C/W): 54 Typical Diode Forward Voltage (V): 0.74 Typical Gate Plateau Voltage (V): 2.5 Typical Reverse Recovery Time (ns): 44 Maximum Diode Forward Voltage (V): 1.1 Maximum Gate Resistance (Ohm): 2 Maximum Positive Gate Source Voltage (V): 20 Maximum Continuous Drain Current on PCB @ TC=25°C (A): 42 Supplier Package: PowerPAK SO EP Pin Count: 8 Standard Package Name: SO Mounting: Surface Mount Package Height: 1.07(Max) Package Length: 4.9 Package Width: 5.89 PCB changed: 8 Lead Shape: No Lead SI7192DP - N-Channel 30 V 1.9 m? 104 W TrenchFET GEN III Mosfet - PPAKSO-8 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Product_site_launch_date2017-07-26T15:55:54.056Z 2020-07-23T20:53:20.402Z
Size1 Piece 10 Piece 100 Piece 5 Piece 50 Piece 500
Supplier_declared_dg_hz_regulationunknown
TitleMOSFET 30V 60A 104W 1.9mohm @ 10V (1 piece) MOSFET 30V 60A 104W 1.9mohm @ 10V (10 pieces) MOSFET 30V 60A 104W 1.9mohm @ 10V (100 pieces) MOSFET 30V 60A 104W 1.9mohm @ 10V (5 pieces) MOSFET 30V 60A 104W 1.9mohm @ 10V (50 pieces) MOSFET 30V 60A 104W 1.9mohm @ 10V (500 pieces) SILICONIX (VISHAY) SI7192DP-T1-GE3 SI7192DP - N-Channel 30 V 1.9 m? 104 W TrenchFET GEN III Mosfet - PPAKSO-8 - 3000 item(s)
Typeean
URLhttp://ecx.images-amazon.com/images/I/11LILwBWaNL._SL75_.jpg https://m.media-amazon.com/images/I/11LILwBWaNL._SL75_.jpg
Unitgrams pounds
Unitspixels pounds
VariantMAIN
WebsiteDisplayGroupbiss_basic_display_on_website
WebsiteDisplayGroupNameBISS Basic
Weight0.0007275254646
Width150 323 75

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Newark09P2626300030002000 @ $1.79, 4000 @ $1.67, 8000 @ $1.55, 12000 @ $1.50, 20000 @ $1.47
RadwellSI7192DP-T1-GE330003000
1SourceSI7192DP-T1-GE311
Digi-Key1979050111 @ $3.82, 10 @ $3.43, 100 @ $2.81, 500 @ $2.39, 1000 @ $2.16
swatee.comSI7192DP-T1-GE31245611 @ $6.95
Win SourceSI7192DP-T1-GE375586257575 @ $0.70, 195 @ $0.57, 605 @ $0.50
HotendaH18074401900011 @ $1.52
Future Electronics2052579300030003000 @ $0.95

Related on Amazon

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MOSFET 30V 60A 104W 1.9mohm @ 10V (10 pieces)
Brand: Vishay / Siliconix
Catalog
FeatureManufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 60 A Rds On - Drain-Source Resistance: 1.85 mOhms Configuration: Single Quad Drain Triple Source Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 6.25 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNSI7192DP-T1-GE3
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVishay / Siliconix
View on Amazon (paid link)
MOSFET 30V 60A 104W 1.9mohm @ 10V (100 pieces)
Brand: Vishay / Siliconix
Catalog
FeatureManufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 60 A Rds On - Drain-Source Resistance: 1.85 mOhms Configuration: Single Quad Drain Triple Source Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 6.25 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNSI7192DP-T1-GE3
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVishay / Siliconix
View on Amazon (paid link)
MOSFET 30V 60A 104W 1.9mohm @ 10V (5 pieces)
Brand: Vishay / Siliconix
Catalog
FeatureManufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 60 A Rds On - Drain-Source Resistance: 1.85 mOhms Configuration: Single Quad Drain Triple Source Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 6.25 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNSI7192DP-T1-GE3
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVishay / Siliconix
View on Amazon (paid link)
MOSFET 30V 60A 104W 1.9mohm @ 10V (50 pieces)
Brand: Vishay / Siliconix
Catalog
FeatureManufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 60 A Rds On - Drain-Source Resistance: 1.85 mOhms Configuration: Single Quad Drain Triple Source Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 6.25 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNSI7192DP-T1-GE3
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVishay / Siliconix
View on Amazon (paid link)
MOSFET 30V 60A 104W 1.9mohm @ 10V (500 pieces)
Brand: Vishay / Siliconix
Catalog
FeatureManufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 60 A Rds On - Drain-Source Resistance: 1.85 mOhms Configuration: Single Quad Drain Triple Source Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 6.25 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNSI7192DP-T1-GE3
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVishay / Siliconix
View on Amazon (paid link)
MOSFET 30V 60A 104W 1.9mohm @ 10V (1 piece)
Brand: Vishay / Siliconix
Catalog
FeatureManufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 60 A Rds On - Drain-Source Resistance: 1.85 mOhms Configuration: Single Quad Drain Triple Source Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 6.25 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNSI7192DP-T1-GE3
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVishay / Siliconix
View on Amazon (paid link)
SILICONIX (VISHAY) SI7192DP-T1-GE3 SI7192DP - N-Channel 30 V 1.9 m? 104 W TrenchFET GEN III Mosfet - PPAKSO-8 - 3000 item(s)
Brand: SILICONIX (VISHAY)
SI7192DP - N-Channel 30 V 1.9 m? 104 W TrenchFET GEN III Mosfet - PPAKSO-8 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
  • ChannelType: N-Channel
  • VoltageDraintoSource: 30 V
  • Drain-sourceOnResistance-Max: 0.0019 Ω
  • QgGateCharge: 135 nC
  • RatedPowerDissipation(P): 104 W
Listing
Product groupBISS
Product typeBISS
ModelSI7192DP-T1-GE3
Part numberSI7192DP-T1-GE3
Items per pack3000
LabelSILICONIX (VISHAY)
ManufacturerSILICONIX (VISHAY)
Catalog
FeatureChannelType: N-Channel
CategoryIndustrial & Scientific
MPNSI7192DP-T1-GE3
Product groupBISS
Product typeBISS
ManufacturerSILICONIX (VISHAY)
View on Amazon (paid link)
SI7192DP-T1-GE3, Trans MOSFET N-CH 30V 42A 8-Pin PowerPAK SO EP T/R (25 Items)
Brand: Vishay
EU RoHS: Compliant with Exemption ECCN (US): EAR99 Part Status: NRND HTS: 8541.29.00.95 SVHC: Yes SVHC Exceeds Threshold: Yes Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Quad Drain Triple Source Process Technology: TrenchFET Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 30 Maximum Gate Source Voltage (V): ±20 Maximum Gate Threshold Voltage (V): 2.5 Operating Junction Temperature (°C): -55 to 150 Maximum Continuous Drain Current (A): 42 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 1 Maximum Drain Source Resistance (mOhm): 1.9@10V Typical Gate Charge @ Vgs (nC): 90@10V|43.5@4.5V Typical Gate Charge @ 10V (nC): 90 Typical Gate to Drain Charge (nC): 12.5 Typical Gate to Source Charge (nC): 14 Typical Reverse Recovery Charge (nC): 50 Typical Input Capacitance @ Vds (pF): 5800@15V Typical Reverse Transfer Capacitance @ Vds (pF): 440@15V Minimum Gate Threshold Voltage (V): 1 Typical Output Capacitance (pF): 1050 Maximum Power Dissipation (mW): 6250 Typical Fall Time (ns): 32 Typical Rise Time (ns): 26 Typical Turn-Off Delay Time (ns): 86 Typical Turn-On Delay Time (ns): 41 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Maximum Power Dissipation on PCB @ TC=25°C (W): 6.25 Maximum Pulsed Drain Current @ TC=25°C (A): 100 Maximum Junction Ambient Thermal Resistance on PCB (°C/W): 54 Typical Diode Forward Voltage (V): 0.74 Typical Gate Plateau Voltage (V): 2.5 Typical Reverse Recovery Time (ns): 44 Maximum Diode Forward Voltage (V): 1.1 Maximum Gate Resistance (Ohm): 2 Maximum Positive Gate Source Voltage (V): 20 Maximum Continuous Drain Current on PCB @ TC=25°C (A): 42 Supplier Package: PowerPAK SO EP Pin Count: 8 Standard Package Name: SO Mounting: Surface Mount Package Height: 1.07(Max) Package Length: 4.9 Package Width: 5.89 PCB changed: 8 Lead Shape: No Lead
View on Amazon (paid link)