Vishay N Channel Mosfet, 30V, 60A, Soic, Full Reel - SI7192DP-T1-GE3
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Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
![]() Newark | 09P2626 | 3000 | 3000 | 2000 @ $1.79, 4000 @ $1.67, 8000 @ $1.55, 12000 @ $1.50, 20000 @ $1.47 | |
![]() Radwell | SI7192DP-T1-GE3 | 3000 | 3000 | ||
| 1Source | SI7192DP-T1-GE3 | 1 | 1 | ||
| Digi-Key | 1979050 | 1 | 1 | 1 @ $3.82, 10 @ $3.43, 100 @ $2.81, 500 @ $2.39, 1000 @ $2.16 | |
![]() swatee.com | SI7192DP-T1-GE3 | 1 | 2456 | 1 | 1 @ $6.95 |
| Win Source | SI7192DP-T1-GE3 | 75 | 58625 | 75 | 75 @ $0.70, 195 @ $0.57, 605 @ $0.50 |
| Hotenda | H1807440 | 1 | 9000 | 1 | 1 @ $1.52 |
| Future Electronics | 2052579 | 3000 | 3000 | 3000 @ $0.95 |
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MOSFET 30V 60A 104W 1.9mohm @ 10V (10 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 60 A Rds On - Drain-Source Resistance: 1.85 mOhms Configuration: Single Quad Drain Triple Source Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 6.25 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI7192DP-T1-GE3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET 30V 60A 104W 1.9mohm @ 10V (100 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 60 A Rds On - Drain-Source Resistance: 1.85 mOhms Configuration: Single Quad Drain Triple Source Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 6.25 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI7192DP-T1-GE3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET 30V 60A 104W 1.9mohm @ 10V (5 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 60 A Rds On - Drain-Source Resistance: 1.85 mOhms Configuration: Single Quad Drain Triple Source Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 6.25 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI7192DP-T1-GE3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET 30V 60A 104W 1.9mohm @ 10V (50 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 60 A Rds On - Drain-Source Resistance: 1.85 mOhms Configuration: Single Quad Drain Triple Source Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 6.25 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI7192DP-T1-GE3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET 30V 60A 104W 1.9mohm @ 10V (500 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 60 A Rds On - Drain-Source Resistance: 1.85 mOhms Configuration: Single Quad Drain Triple Source Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 6.25 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI7192DP-T1-GE3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET 30V 60A 104W 1.9mohm @ 10V (1 piece)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 60 A Rds On - Drain-Source Resistance: 1.85 mOhms Configuration: Single Quad Drain Triple Source Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 6.25 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI7192DP-T1-GE3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
SILICONIX (VISHAY) SI7192DP-T1-GE3 SI7192DP - N-Channel 30 V 1.9 m? 104 W TrenchFET GEN III Mosfet - PPAKSO-8 - 3000 item(s)
Brand: SILICONIX (VISHAY)
SI7192DP - N-Channel 30 V 1.9 m? 104 W TrenchFET GEN III Mosfet - PPAKSO-8 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
- ChannelType: N-Channel
- VoltageDraintoSource: 30 V
- Drain-sourceOnResistance-Max: 0.0019 Ω
- QgGateCharge: 135 nC
- RatedPowerDissipation(P): 104 W
Listing
| Product group | BISS |
|---|---|
| Product type | BISS |
| Model | SI7192DP-T1-GE3 |
| Part number | SI7192DP-T1-GE3 |
| Items per pack | 3000 |
| Label | SILICONIX (VISHAY) |
| Manufacturer | SILICONIX (VISHAY) |
Catalog
| Feature | ChannelType: N-Channel |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI7192DP-T1-GE3 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | SILICONIX (VISHAY) |
SI7192DP-T1-GE3, Trans MOSFET N-CH 30V 42A 8-Pin PowerPAK SO EP T/R (25 Items)
Brand: Vishay
EU RoHS: Compliant with Exemption ECCN (US): EAR99 Part Status: NRND HTS: 8541.29.00.95 SVHC: Yes SVHC Exceeds Threshold: Yes Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Quad Drain Triple Source Process Technology: TrenchFET Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 30 Maximum Gate Source Voltage (V): ±20 Maximum Gate Threshold Voltage (V): 2.5 Operating Junction Temperature (°C): -55 to 150 Maximum Continuous Drain Current (A): 42 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 1 Maximum Drain Source Resistance (mOhm): 1.9@10V Typical Gate Charge @ Vgs (nC): 90@10V|43.5@4.5V Typical Gate Charge @ 10V (nC): 90 Typical Gate to Drain Charge (nC): 12.5 Typical Gate to Source Charge (nC): 14 Typical Reverse Recovery Charge (nC): 50 Typical Input Capacitance @ Vds (pF): 5800@15V Typical Reverse Transfer Capacitance @ Vds (pF): 440@15V Minimum Gate Threshold Voltage (V): 1 Typical Output Capacitance (pF): 1050 Maximum Power Dissipation (mW): 6250 Typical Fall Time (ns): 32 Typical Rise Time (ns): 26 Typical Turn-Off Delay Time (ns): 86 Typical Turn-On Delay Time (ns): 41 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Maximum Power Dissipation on PCB @ TC=25°C (W): 6.25 Maximum Pulsed Drain Current @ TC=25°C (A): 100 Maximum Junction Ambient Thermal Resistance on PCB (°C/W): 54 Typical Diode Forward Voltage (V): 0.74 Typical Gate Plateau Voltage (V): 2.5 Typical Reverse Recovery Time (ns): 44 Maximum Diode Forward Voltage (V): 1.1 Maximum Gate Resistance (Ohm): 2 Maximum Positive Gate Source Voltage (V): 20 Maximum Continuous Drain Current on PCB @ TC=25°C (A): 42 Supplier Package: PowerPAK SO EP Pin Count: 8 Standard Package Name: SO Mounting: Surface Mount Package Height: 1.07(Max) Package Length: 4.9 Package Width: 5.89 PCB changed: 8 Lead Shape: No Lead

