Vishay N Channel Mosfet, 150V, 4.8A, Soic - SI7898DP-T1-E3
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Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
![]() Newark | 06J8174 | 3000 | 3000 | 500 @ $1.02 | |
| JT25-SI7898DP-T1-E3 | 1 | 410 | 1 | ||
| SI7898DPT1E3 | 1 | 1 | |||
| 1Source | SI7898DP-T1-E3 | 1 | 1 | ||
| Allied Electronics | 70026291 | 3000 | 3000 | ||
| RS Delivers | 180-7322 | 1 | 1 | 1 @ $1.00 | |
![]() Radwell | SI7898DP-T1-E3 | 3000 | 3000 | ||
| Digi-Key | 1765000 | 1 | 83 | 1 | 1 @ $2.29, 10 @ $2.06, 100 @ $1.66, 500 @ $1.36, 1000 @ $1.17, 3000 @ $1.17 |
![]() AmazonTP | B011NB8ML8 | 1 | 1 | 1 @ $5.99 | |
| Hotenda | H1807481 | 1 | 3140 | 1 | 1 @ $1.67, 10 @ $1.50, 25 @ $1.42, 100 @ $1.21, 250 @ $1.13, 500 @ $0.99 |
| Future Electronics | 8997389 | 3000 | 15000 | 3000 | 3000 @ $0.65 |
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MOSFET 150V 4.8A 0.085Ohm (10 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 150 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 3 A Rds On - Drain-Source Resistance: 85 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.9 W Mounting Style: SMD/SMT Package / Case: PowerPAK SO-8 |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI7898DP-T1-E3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET 150V 4.8A 0.085Ohm (5 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 150 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 3 A Rds On - Drain-Source Resistance: 85 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.9 W Mounting Style: SMD/SMT Package / Case: PowerPAK SO-8 |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI7898DP-T1-E3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET 150V 4.8A 0.085Ohm (50 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 150 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 3 A Rds On - Drain-Source Resistance: 85 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.9 W Mounting Style: SMD/SMT Package / Case: PowerPAK SO-8 |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI7898DP-T1-E3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
MOSFET 150V 4.8A 0.085Ohm (500 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 150 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 3 A Rds On - Drain-Source Resistance: 85 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.9 W Mounting Style: SMD/SMT Package / Case: PowerPAK SO-8 |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI7898DP-T1-E3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
Mosfet 150V 4.8A 0.085Ohm
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 150 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 3 A Rds On - Drain-Source Resistance: 85 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.9 W Mounting Style: SMD/SMT Package / Case: PowerPAK SO-8 |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI7898DP-T1-E3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
Vishay N Channel Mosfet, 150V, 4.8A, Soic - SI7898DP-T1-E3
Brand: Vishay
N CHANNEL MOSFET, 150V, 4.8A, SOIC; Transistor Polarity:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:4.8A; On Resistance Rds(on):0.095ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:20V RoHS Compliant: Yes
Details
- <b>Price For:</b> Pack of 1<b>Order Unit:</b> Tape & Reel Cut 1 <b>Continuous Drain Current Id:</b>: 4.8 <b>Drain Source Voltage Vds:</b>: 150 <b>MSL:</b>: MSL 1 - Unlimited <b>No. of Pins:</b>: 8 <b>On Resistance Rds(on):</b>: 0.095 <b>Operating Temperature Max:</b>: 150 <b>Operating Temperature Min:</b>: -55 <b>Power Dissipation Pd:</b>: 5 <b>Rds(on) Test Voltage Vgs:</b>: 20 <b>SVHC:</b>: To Be Advised <b>Threshold Voltage Vgs Typ:</b>: 4
- <b>Transistor Case Style:</b>: SOIC <b>Transistor Polarity:</b>: N Channel
Listing
| Product group | BISS Basic |
|---|---|
| Product type | HARDWARE |
| Model | SI7898DP-T1-E3 |
| Part number | SI7898DP-T1-E3 |
| Items per pack | 1 |
| Label | Vishay |
| Manufacturer | Vishay |
MOSFET 150V 4.8A 0.085Ohm (100 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | Manufacturer: Vishay Product Category: N-Channel MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 150 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 3 A Rds On - Drain-Source Resistance: 85 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.9 W Mounting Style: SMD/SMT Package / Case: PowerPAK SO-8 |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI7898DP-T1-E3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Vishay / Siliconix |
VISHAY SILICONIX SI7898DP-T1-E3 N CHANNEL MOSFET, 150V, 4.8A, SOIC (50 pieces)
Brand: Vishay / Siliconix
Catalog
| Feature | <b>Price For:</b> Pack of 50<b>Order Unit:</b> Tape & Reel Cut\xa01 <b>Continuous Drain Current Id:</b>: 4.8 <b>Drain Source Voltage Vds:</b>: 150 <b>MSL:</b>: MSL 1 - Unlimited <b>No. of Pins:</b>: 8 <b>On Resistance Rds(on):</b>: 0.095 <b>Operating Temperature Max:</b>: 150 <b>Operating Temperature Min:</b>: -55 <b>Power Dissipation Pd:</b>: 5 <b>Rds(on) Test Voltage Vgs:</b>: 20 <b>SVHC:</b>: To Be Advised <b>Threshold Voltage Vgs Typ:</b>: 4 |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI7898DP-T1-E3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | VISHAY SILICONIX |
SILICONIX (VISHAY) SI7898DP-T1-E3 Single N-Channel 150 V 0.085 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8-3000 item(s)
Brand: SILICONIX (VISHAY)
Single N-Channel 150 V 0.085 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8 For more info refer to the specification sheet located in the 'Downloads' section below the image
Details
- ChannelType: N-Channel; VoltageDraintoSource: 150 V; Drain-sourceOnResistance-Max: 0.085 ?;
- QgGateCharge: 21 nC; RatedPowerDissipation(P): 1.9 W;
Listing
| Product group | BISS |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Model | SI7898DP-T1-E3 |
| Part number | SI7898DP-T1-E3 |
| Items per pack | 3000 |
| Label | SILICONIX (VISHAY) |
| Manufacturer | SILICONIX (VISHAY) |
Catalog
| Feature | ChannelType: N-Channel; VoltageDraintoSource: 150 V; Drain-sourceOnResistance-Max: 0.085 ?; |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI7898DP-T1-E3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | SILICONIX (VISHAY) |

