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IXFH12N50F IXYS Transistors - Jotrin Electronics

Gallery

Attributes

Brand name, Manufacturer name, ManufacturerIXYS Corporation
Attribute00TO-247
Attribute01MOSFET
Attribute02Rohs
Attribute03Obsoleted
Attribute04, qtyInStock208
Attribute05Single
Attribute06+ 150 C
Attribute07Through Hole
Attribute08TO-247AD
Attribute09Tube
Attribute108 ns
Attribute11- 55 C
Attribute12180 W
Attribute1314 ns
Attribute1430
Attribute1528 ns
AttributeKey00Package/Case
AttributeKey01Product Categories
AttributeKey02RoHs Status
AttributeKey03Life Cycle
AttributeKey04In-stock
AttributeKey05Configuration
AttributeKey06Maximum Operating Temperature
AttributeKey07Mounting Style
AttributeKey08Package / Case
AttributeKey09Packaging
AttributeKey10Fall Time
AttributeKey11Minimum Operating Temperature
AttributeKey12Power Dissipation
AttributeKey13Rise Time
AttributeKey14Factory Pack Quantity
AttributeKey15Typical Turn Off Delay Time
Extra Product NameIXFH12N50F IXYS Transistors - Jotrin Electronics
keywordsIXFH12N50F,IXYS,TO-247,MOSFET,IXFH12N50F Datasheet PDF
moq, multiple1
MPNIXFH12N50F
SKUJT25-IXFH12N50F
snippetBuy IXFH12N50F IXYS , Learn more about IXFH12N50F N-Channel Enhancement Mode HiPerFET Power MOSFET (maximum drain-source breakdown voltage of 500V, 0.4? on-resistance N-channel enhancement mode HiPerFET power MOSFET) ,MOSFET, View the manufacturer, and stock, and datasheet pdf for the IXFH12N50F at Jotrin Electronics.

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