Vishay Mosfet, N Channel, 20V, 25A, Powerpak Sc70-6 - SIA466EDJ-T1-GE3

EU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Quad Drain Process Technology: TrenchFET Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 20 Maximum Gate Source Voltage (V): ±20 Maximum Gate Threshold Voltage (V): 2.5 Maximum Continuous Drain Current (A): 25 Maximum Gate Source Leakage Current (nA): 30000 Maximum IDSS (uA): 10 Maximum Drain Source Resistance (mOhm): 9.5@10V Typical Gate Charge @ Vgs (nC): 13@10V Typical Gate Charge @ 10V (nC): 13 Typical Input Capacitance @ Vds (pF): 620 Maximum Power Dissipation (mW): 19200 Typical Fall Time (ns): 20 Typical Rise Time (ns): 73 Typical Turn-Off Delay Time (ns): 12 Typical Turn-On Delay Time (ns): 15 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Maximum Positive Gate Source Voltage (V): 20 Maximum Continuous Drain Current on PCB @ TC=25°C (A): 15.1 Maximum Power Dissipation on PCB @ TC=25°C (W): 3.5 Maximum Junction Ambient Thermal Resistance on PCB (°C/W): 80 Typical Diode Forward Voltage (V): 0.8 Typical Gate Plateau Voltage (V): 2.2 Typical Reverse Recovery Time (ns): 22 Maximum Diode Forward Voltage (V): 1.2 Minimum Gate Resistance (Ohm): 0.2 Maximum Gate Resistance (Ohm): 1.8 Supplier Package: PowerPAK SC-70 Pin Count: 6 Standard Package Name: SOT Mounting: Surface Mount Package Height: 0.75(Max) Package Length: 2.05 Package Width: 2.05 PCB changed: 6