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Microsemi Corporation . APT50GS60BRG

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Attributes

Brand name, Manufacturer nameMicrosemi Corporation
ManufacturerMicrosemi Corporation Microsemi
minimum, moq, tierMinQty173
MPN, Part Number, PartNumberAPT50GS60BRG
multiple1
qtyInStock0
SKUAPT50GS60BRG-ND
tierPrice17.53068
Product Group, ProductGroup, ProductTypeNameBISS
AsinB0137L029C B0137L1160 B0137L3ETW B0137L6U3E
Brand, Label, Man, Publisher, StudioMicrosemi
Case, NumberOfItems, PackageQuantity1 10 5 50
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
Feature<b>Price For:</b> Pack of 1 <b>Manufacturer</b>: Microsemi <b>Product Category</b>: IGBT Transistors <b>RoHS</b>: <b>Configuration</b>: Single <b>Collector- Emitter Voltage VCEO Max</b>: 600 V <b>Collector-Emitter Saturation Voltage</b>: 2.8 V <b>Maximum Gate Emitter Voltage</b>: 30 V <b>Continuous Collector Current at 25 C</b>: 93 A <b>Gate-Emitter Leakage Current</b>: 100 nA <b>Power Dissipation</b>: 415 W <b>Maximum Operating Temperature</b>: + 150 C <b>Price For:</b> Pack of 10 <b>Manufacturer</b>: Microsemi <b>Product Category</b>: IGBT Transistors <b>RoHS</b>: <b>Configuration</b>: Single <b>Collector- Emitter Voltage VCEO Max</b>: 600 V <b>Collector-Emitter Saturation Voltage</b>: 2.8 V <b>Maximum Gate Emitter Voltage</b>: 30 V <b>Continuous Collector Current at 25 C</b>: 93 A <b>Gate-Emitter Leakage Current</b>: 100 nA <b>Power Dissipation</b>: 415 W <b>Maximum Operating Temperature</b>: + 150 C <b>Price For:</b> Pack of 5 <b>Manufacturer</b>: Microsemi <b>Product Category</b>: IGBT Transistors <b>RoHS</b>: <b>Configuration</b>: Single <b>Collector- Emitter Voltage VCEO Max</b>: 600 V <b>Collector-Emitter Saturation Voltage</b>: 2.8 V <b>Maximum Gate Emitter Voltage</b>: 30 V <b>Continuous Collector Current at 25 C</b>: 93 A <b>Gate-Emitter Leakage Current</b>: 100 nA <b>Power Dissipation</b>: 415 W <b>Maximum Operating Temperature</b>: + 150 C <b>Price For:</b> Pack of 50 <b>Manufacturer</b>: Microsemi <b>Product Category</b>: IGBT Transistors <b>RoHS</b>: <b>Configuration</b>: Single <b>Collector- Emitter Voltage VCEO Max</b>: 600 V <b>Collector-Emitter Saturation Voltage</b>: 2.8 V <b>Maximum Gate Emitter Voltage</b>: 30 V <b>Continuous Collector Current at 25 C</b>: 93 A <b>Gate-Emitter Leakage Current</b>: 100 nA <b>Power Dissipation</b>: 415 W <b>Maximum Operating Temperature</b>: + 150 C
Size1 pack 10 pack 5 pack 50 pack
TitleIGBT Transistors Insulated Gate Bipolar Transistor - NPT High Frequency - Single (1 piece) IGBT Transistors Insulated Gate Bipolar Transistor - NPT High Frequency - Single (10 pieces) IGBT Transistors Insulated Gate Bipolar Transistor - NPT High Frequency - Single (5 pieces) IGBT Transistors Insulated Gate Bipolar Transistor - NPT High Frequency - Single (50 pieces)

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SellerSKUMOQIn stockMultiplePrices
Digi-KeyAPT50GS60BRG-ND73173 @ $7.53
HotendaH184964111
1SourceAPT50GS60BRG11

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IGBT Transistors Insulated Gate Bipolar Transistor - NPT High Frequency - Single (1 piece)
Brand: Microsemi
Catalog
Feature<b>Price For:</b> Pack of 1 <b>Manufacturer</b>: Microsemi <b>Product Category</b>: IGBT Transistors <b>RoHS</b>: <b>Configuration</b>: Single <b>Collector- Emitter Voltage VCEO Max</b>: 600 V <b>Collector-Emitter Saturation Voltage</b>: 2.8 V <b>Maximum Gate Emitter Voltage</b>: 30 V <b>Continuous Collector Current at 25 C</b>: 93 A <b>Gate-Emitter Leakage Current</b>: 100 nA <b>Power Dissipation</b>: 415 W <b>Maximum Operating Temperature</b>: + 150 C
CategoryIndustrial & Scientific
MPNAPT50GS60BRG
Product groupBISS
Product typeBISS
ManufacturerMicrosemi
View on Amazon (paid link)
IGBT Transistors Insulated Gate Bipolar Transistor - NPT High Frequency - Single (10 pieces)
Brand: Microsemi
Catalog
Feature<b>Price For:</b> Pack of 10 <b>Manufacturer</b>: Microsemi <b>Product Category</b>: IGBT Transistors <b>RoHS</b>: <b>Configuration</b>: Single <b>Collector- Emitter Voltage VCEO Max</b>: 600 V <b>Collector-Emitter Saturation Voltage</b>: 2.8 V <b>Maximum Gate Emitter Voltage</b>: 30 V <b>Continuous Collector Current at 25 C</b>: 93 A <b>Gate-Emitter Leakage Current</b>: 100 nA <b>Power Dissipation</b>: 415 W <b>Maximum Operating Temperature</b>: + 150 C
CategoryIndustrial & Scientific
MPNAPT50GS60BRG
Product groupBISS
Product typeBISS
ManufacturerMicrosemi
View on Amazon (paid link)
IGBT Transistors Insulated Gate Bipolar Transistor - NPT High Frequency - Single (5 pieces)
Brand: Microsemi
Catalog
Feature<b>Price For:</b> Pack of 5 <b>Manufacturer</b>: Microsemi <b>Product Category</b>: IGBT Transistors <b>RoHS</b>: <b>Configuration</b>: Single <b>Collector- Emitter Voltage VCEO Max</b>: 600 V <b>Collector-Emitter Saturation Voltage</b>: 2.8 V <b>Maximum Gate Emitter Voltage</b>: 30 V <b>Continuous Collector Current at 25 C</b>: 93 A <b>Gate-Emitter Leakage Current</b>: 100 nA <b>Power Dissipation</b>: 415 W <b>Maximum Operating Temperature</b>: + 150 C
CategoryIndustrial & Scientific
MPNAPT50GS60BRG
Product groupBISS
Product typeBISS
ManufacturerMicrosemi
View on Amazon (paid link)
IGBT Transistors Insulated Gate Bipolar Transistor - NPT High Frequency - Single (50 pieces)
Brand: Microsemi
Catalog
Feature<b>Price For:</b> Pack of 50 <b>Manufacturer</b>: Microsemi <b>Product Category</b>: IGBT Transistors <b>RoHS</b>: <b>Configuration</b>: Single <b>Collector- Emitter Voltage VCEO Max</b>: 600 V <b>Collector-Emitter Saturation Voltage</b>: 2.8 V <b>Maximum Gate Emitter Voltage</b>: 30 V <b>Continuous Collector Current at 25 C</b>: 93 A <b>Gate-Emitter Leakage Current</b>: 100 nA <b>Power Dissipation</b>: 415 W <b>Maximum Operating Temperature</b>: + 150 C
CategoryIndustrial & Scientific
MPNAPT50GS60BRG
Product groupBISS
Product typeBISS
ManufacturerMicrosemi
View on Amazon (paid link)