Microsemi Corporation . APT50GS60BRG
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Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| APT50GS60BRG-ND | 73 | 1 | 73 @ $7.53 | ||
| Hotenda | H1849641 | 1 | 1 | ||
| 1Source | APT50GS60BRG | 1 | 1 |
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IGBT Transistors Insulated Gate Bipolar Transistor - NPT High Frequency - Single (1 piece)
Brand: Microsemi
Catalog
| Feature | <b>Price For:</b> Pack of 1 <b>Manufacturer</b>: Microsemi <b>Product Category</b>: IGBT Transistors <b>RoHS</b>: <b>Configuration</b>: Single <b>Collector- Emitter Voltage VCEO Max</b>: 600 V <b>Collector-Emitter Saturation Voltage</b>: 2.8 V <b>Maximum Gate Emitter Voltage</b>: 30 V <b>Continuous Collector Current at 25 C</b>: 93 A <b>Gate-Emitter Leakage Current</b>: 100 nA <b>Power Dissipation</b>: 415 W <b>Maximum Operating Temperature</b>: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | APT50GS60BRG |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Microsemi |
IGBT Transistors Insulated Gate Bipolar Transistor - NPT High Frequency - Single (10 pieces)
Brand: Microsemi
Catalog
| Feature | <b>Price For:</b> Pack of 10 <b>Manufacturer</b>: Microsemi <b>Product Category</b>: IGBT Transistors <b>RoHS</b>: <b>Configuration</b>: Single <b>Collector- Emitter Voltage VCEO Max</b>: 600 V <b>Collector-Emitter Saturation Voltage</b>: 2.8 V <b>Maximum Gate Emitter Voltage</b>: 30 V <b>Continuous Collector Current at 25 C</b>: 93 A <b>Gate-Emitter Leakage Current</b>: 100 nA <b>Power Dissipation</b>: 415 W <b>Maximum Operating Temperature</b>: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | APT50GS60BRG |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Microsemi |
IGBT Transistors Insulated Gate Bipolar Transistor - NPT High Frequency - Single (5 pieces)
Brand: Microsemi
Catalog
| Feature | <b>Price For:</b> Pack of 5 <b>Manufacturer</b>: Microsemi <b>Product Category</b>: IGBT Transistors <b>RoHS</b>: <b>Configuration</b>: Single <b>Collector- Emitter Voltage VCEO Max</b>: 600 V <b>Collector-Emitter Saturation Voltage</b>: 2.8 V <b>Maximum Gate Emitter Voltage</b>: 30 V <b>Continuous Collector Current at 25 C</b>: 93 A <b>Gate-Emitter Leakage Current</b>: 100 nA <b>Power Dissipation</b>: 415 W <b>Maximum Operating Temperature</b>: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | APT50GS60BRG |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Microsemi |
IGBT Transistors Insulated Gate Bipolar Transistor - NPT High Frequency - Single (50 pieces)
Brand: Microsemi
Catalog
| Feature | <b>Price For:</b> Pack of 50 <b>Manufacturer</b>: Microsemi <b>Product Category</b>: IGBT Transistors <b>RoHS</b>: <b>Configuration</b>: Single <b>Collector- Emitter Voltage VCEO Max</b>: 600 V <b>Collector-Emitter Saturation Voltage</b>: 2.8 V <b>Maximum Gate Emitter Voltage</b>: 30 V <b>Continuous Collector Current at 25 C</b>: 93 A <b>Gate-Emitter Leakage Current</b>: 100 nA <b>Power Dissipation</b>: 415 W <b>Maximum Operating Temperature</b>: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | APT50GS60BRG |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Microsemi |