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Onsemi Single Igbt, 1.2Kv, 21A - HGTG5N120BND

ONSEMI . HGTG5N120BND

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Attributes

Brand name, Manufacturer nameONSEMI
ManufacturerONSEMI Fairchild Semiconductor
CategoryL1Semiconductors - Discretes
CategoryL2IGBTs
CategoryL3Single IGBTs
Extra Product NameOnsemi Single Igbt, 1.2Kv, 21A - HGTG5N120BND
jsonUrlDataSemiconductors - Discretes > IGBTs > Single IGBTs
moq, multiple450
MPN, Part Number, Keyword, PartNumber, Part_numberHGTG5N120BND
qtyInStock, tierPrice10
SKU98B1932
tierMinQty11
urlhttps://www.newark.com/98B1932?CMP=AFC-DATAALCHEMY
Product GroupBISS
ASINB00M1H38MC
AdultProduct, Autographed, Batteries_required, Memorabilia, TradeInEligibleFalse
AsinB00LUF5PTU B00LUF5QN0 B00LUF5RSO B00LUF5SIS B00M1H38MC B00MEKA5DG
Brand, Label, Man, Publisher, StudioFairchild Semiconductor
Case, PackageQuantity1 10 100 5 50
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 512-HGTG5N120BND MS 512-HGTG5N120BND X1 MS 512-HGTG5N120BND X10 MS 512-HGTG5N120BND X100 MS 512-HGTG5N120BND X5 MS 512-HGTG5N120BND X50
ClassificationId306916011
DisplayNameIGBT
FeatureManufacturer: Fairchild Semiconductor Product Category: IGBT Transistors RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 2.45 V Maximum Gate Emitter Voltage: +/- 20 V Continuous Collector Current at 25 C: 21 A Gate-Emitter Leakage Current: +/- 250 nA Power Dissipation: 167 W Maximum Operating Temperature: + 150 C Package / Case: TO-247-3
FetchTime1626191415 1674754624 1714867875
Height, Width500 75
ItemClassificationBASE_PRODUCT
ItemName, Item_nameIGBT Transistors 21a 1200V IGBT NPT Series N-Ch (1 piece)
Item_type_keywordigbt-transistors
Item_weight0.01
Linkhttps://m.media-amazon.com/images/I/31c7QkvmV2L._SL75_.jpg https://m.media-amazon.com/images/I/31c7QkvmV2L.jpg
Marketplace_idATVPDKIKX0DER
ProductGroupBISS BISS Basic
ProductType, ProductTypeNameELECTRONIC_COMPONENT
Product_site_launch_date2014-11-05T07:18:34.673Z
Supplier_declared_dg_hz_regulationunknown
TitleIGBT Transistors 21a 1200V IGBT NPT Series N-Ch IGBT Transistors 21a 1200V IGBT NPT Series N-Ch (1 piece) IGBT Transistors 21a 1200V IGBT NPT Series N-Ch (10 pieces) IGBT Transistors 21a 1200V IGBT NPT Series N-Ch (100 pieces) IGBT Transistors 21a 1200V IGBT NPT Series N-Ch (5 pieces) IGBT Transistors 21a 1200V IGBT NPT Series N-Ch (50 pieces)
URLhttps://m.media-amazon.com/images/I/31c7QkvmV2L._SL75_.jpg
Unitounces pounds
Unitspixels pounds
VariantMAIN
WebsiteDisplayGroupbiss_basic_display_on_website
WebsiteDisplayGroupNameBISS Basic
Weight0.000625

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Newark98B19324504501 @ $0.00
4 Star ElectronicsHGTG5N120BND11
Little DiodeHGTG5N120BND111 @ $20.79
TMEHGTG5N120BND11
1SourceHGTG5N120BND11
Digi-Key105774111
swatee.comHGTG5N120BND149611 @ $4.80
RadwellHGTG5N120BND4504501 @ $2.45
Win SourceHGTG5N120BND204462020 @ $1.60, 50 @ $1.50, 150 @ $1.40
HotendaH1849024146011 @ $2.84, 10 @ $2.55
Future Electronics7000431450450450 @ $1.54, 150 @ $1.33, 510 @ $1.20

Related on Amazon

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IGBT Transistors 21a 1200V IGBT NPT Series N-Ch (10 pieces)
Brand: Fairchild Semiconductor
Catalog
FeatureManufacturer: Fairchild Semiconductor Product Category: IGBT Transistors RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 2.45 V Maximum Gate Emitter Voltage: +/- 20 V Continuous Collector Current at 25 C: 21 A Gate-Emitter Leakage Current: +/- 250 nA Power Dissipation: 167 W Maximum Operating Temperature: + 150 C Package / Case: TO-247-3
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Product typeELECTRONIC_COMPONENT
ManufacturerFairchild Semiconductor
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FeatureManufacturer: Fairchild Semiconductor Product Category: IGBT Transistors RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 2.45 V Maximum Gate Emitter Voltage: +/- 20 V Continuous Collector Current at 25 C: 21 A Gate-Emitter Leakage Current: +/- 250 nA Power Dissipation: 167 W Maximum Operating Temperature: + 150 C Package / Case: TO-247-3
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MPNHGTG5N120BND
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Product groupBISS
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IGBT Transistors 21a 1200V IGBT NPT Series N-Ch (1 piece)
Brand: Fairchild Semiconductor
Listing
Product groupBISS Basic
Product typeELECTRONIC_COMPONENT
Part numberHGTG5N120BND
LabelFairchild Semiconductor
ManufacturerFairchild Semiconductor
Catalog
FeatureManufacturer: Fairchild Semiconductor Product Category: IGBT Transistors RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 2.45 V Maximum Gate Emitter Voltage: +/- 20 V Continuous Collector Current at 25 C: 21 A Gate-Emitter Leakage Current: +/- 250 nA Power Dissipation: 167 W Maximum Operating Temperature: + 150 C Package / Case: TO-247-3
CategoryIndustrial & Scientific
MPNHGTG5N120BND
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerFairchild Semiconductor
View on Amazon (paid link)
IGBT Transistors 21a 1200V IGBT NPT Series N-Ch
Brand: Fairchild Semiconductor
Catalog
FeatureManufacturer: Fairchild Semiconductor Product Category: IGBT Transistors RoHS: Configuration: Single Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 2.45 V Maximum Gate Emitter Voltage: +/- 20 V Continuous Collector Current at 25 C: 21 A Gate-Emitter Leakage Current: +/- 250 nA Power Dissipation: 167 W Maximum Operating Temperature: + 150 C Package / Case: TO-247-3
CategoryIndustrial & Scientific
MPNHGTG5N120BND
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerFairchild Semiconductor
View on Amazon (paid link)