Infineon Technologies . IPA90R1K0C3
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Hotenda | H1818279 | 1 | 1481 | 1 | 1 @ $1.70, 10 @ $1.52, 100 @ $1.22, 500 @ $1.01 |
| 1Source | IPA90R1K0C3 | 1 | 1 | ||
| iodParts | IPA90R1K0C3 | 1 | 285 | 1 | |
| Digi-Key | IPA90R1K0C3-ND | 1 | 500 | 1 @ $1.87, 10 @ $1.68, 100 @ $1.35, 500 @ $1.11, 1000 @ $0.92 |
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MOSFET COOL MOS (10 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 900 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 5.7 A Rds On - Drain-Source Resistance: 1 Ohms Configuration: Single Qg - Gate Charge: 34 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 32 W Package / Case: TO-220-3 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPA90R1K0C3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET COOL MOS (100 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 900 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 5.7 A Rds On - Drain-Source Resistance: 1 Ohms Configuration: Single Qg - Gate Charge: 34 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 32 W Package / Case: TO-220-3 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPA90R1K0C3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET COOL MOS (5 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 900 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 5.7 A Rds On - Drain-Source Resistance: 1 Ohms Configuration: Single Qg - Gate Charge: 34 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 32 W Package / Case: TO-220-3 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPA90R1K0C3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET COOL MOS (50 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 900 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 5.7 A Rds On - Drain-Source Resistance: 1 Ohms Configuration: Single Qg - Gate Charge: 34 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 32 W Package / Case: TO-220-3 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPA90R1K0C3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET COOL MOS (500 pieces)
Catalog
| Category | Industrial & Scientific |
|---|---|
| MPN | IPA90R1K0C3 |
| Manufacturer | Infineon Technologies |
MOSFET COOL MOS (1 piece)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 900 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 5.7 A Rds On - Drain-Source Resistance: 1 Ohms Configuration: Single Qg - Gate Charge: 34 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 32 W Package / Case: TO-220-3 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPA90R1K0C3 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |