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Infineon IPD50N03S2L-06

Infineon . IPD50N03S2L-06

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Attributes

Brand name, Manufacturer name, Attribute20Infineon
ManufacturerInfineon Infineon Technologies
Attribute00Reel
Attribute01N-Channel
Attribute0240 ns
Attribute0330 ns
Attribute0430 V
Attribute05Single
Attribute06+ 175 C
Attribute07- 55 C
Attribute08DPAK-2
Attribute096.4 mOhms
Attribute1050 A
Attribute11, Brand, Label, Man, Publisher, StudioInfineon Technologies
Attribute12136 W
Attribute13MOSFET
Attribute1420 V
Attribute15726-IPD50N03S2L-06
Attribute16IPD50N03
Attribute17IPD50N03S2L06ATMA1 SP000254461
Attribute18SMD/SMT
Attribute19, MPN, SKU, Part Number, PartNumberIPD50N03S2L-06
Attribute2115 ns
Attribute22Enhancement
AttributeKey00Packaging
AttributeKey01Transistor Polarity
AttributeKey02Typical Turn-Off Delay Time
AttributeKey03Rise Time
AttributeKey04Vds - Drain-Source Breakdown Voltage
AttributeKey05Configuration
AttributeKey06Maximum Operating Temperature
AttributeKey07Minimum Operating Temperature
AttributeKey08Package/Case
AttributeKey09Rds On - Drain-Source Resistance
AttributeKey10Id - Continuous Drain Current
AttributeKey11Brand
AttributeKey12Pd - Power Dissipation
AttributeKey13Product Category
AttributeKey14Vgs - Gate-Source Breakdown Voltage
AttributeKey15Alternate Part No.
AttributeKey16Series
AttributeKey17Part # Aliases
AttributeKey18Mounting Style
AttributeKey19Manufacturer Part No.
AttributeKey20Manufacturer
AttributeKey21Fall Time
AttributeKey22Channel Mode
Extra Product NameInfineon IPD50N03S2L-06
moq, multiple, tierMinQty11
qtyInStock107
tierPrice11.87
AsinB00HKIBT9Q B00LWP5AN4 B00LWP5D3Q B00LWP5HL4 B00LWP5KF2 B00LWP5NQ8 B00M2DIPC8
Case, PackageQuantity1 10 100 5 50 500
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 726-IPD50N03S2L-06 X1 MS 726-IPD50N03S2L-06 X10 MS 726-IPD50N03S2L-06 X100 MS 726-IPD50N03S2L-06 X5 MS 726-IPD50N03S2L-06 X50 MS 726-IPD50N03S2L-06 X500
FeatureManufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 50 A Rds On - Drain-Source Resistance: 6.4 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 136 W Mounting Style: SMD/SMT Package / Case: DPAK-2
ProductGroupBISS
ProductTypeNameBISS ELECTRONIC_COMPONENT
Size1 Piece 10 Piece 100 Piece 5 Piece 50 Piece 500
TitleMOSFET OPTIMOS PWR-TRANS N-CH 30V 50A 6.4mOhm MOSFET OPTIMOS PWR-TRANS N-CH 30V 50A 6.4mOhm (1 piece) MOSFET OPTIMOS PWR-TRANS N-CH 30V 50A 6.4mOhm (10 pieces) MOSFET OPTIMOS PWR-TRANS N-CH 30V 50A 6.4mOhm (100 pieces) MOSFET OPTIMOS PWR-TRANS N-CH 30V 50A 6.4mOhm (5 pieces) MOSFET OPTIMOS PWR-TRANS N-CH 30V 50A 6.4mOhm (50 pieces) MOSFET OPTIMOS PWR-TRANS N-CH 30V 50A 6.4mOhm (500 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
swatee.comIPD50N03S2L-06110711 @ $1.87
Win SourceIPD50N03S2L-06125001
HotendaH183190311
1SourceIPD50N03S2L-0611

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MOSFET OPTIMOS PWR-TRANS N-CH 30V 50A 6.4mOhm
Catalog
CategoryIndustrial & Scientific
MPNIPD50N03S2L-06
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET OPTIMOS PWR-TRANS N-CH 30V 50A 6.4mOhm (10 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 50 A Rds On - Drain-Source Resistance: 6.4 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 136 W Mounting Style: SMD/SMT Package / Case: DPAK-2
CategoryIndustrial & Scientific
MPNIPD50N03S2L-06
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET OPTIMOS PWR-TRANS N-CH 30V 50A 6.4mOhm (100 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 50 A Rds On - Drain-Source Resistance: 6.4 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 136 W Mounting Style: SMD/SMT Package / Case: DPAK-2
CategoryIndustrial & Scientific
MPNIPD50N03S2L-06
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET OPTIMOS PWR-TRANS N-CH 30V 50A 6.4mOhm (5 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 50 A Rds On - Drain-Source Resistance: 6.4 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 136 W Mounting Style: SMD/SMT Package / Case: DPAK-2
CategoryIndustrial & Scientific
MPNIPD50N03S2L-06
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET OPTIMOS PWR-TRANS N-CH 30V 50A 6.4mOhm (50 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 50 A Rds On - Drain-Source Resistance: 6.4 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 136 W Mounting Style: SMD/SMT Package / Case: DPAK-2
CategoryIndustrial & Scientific
MPNIPD50N03S2L-06
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET OPTIMOS PWR-TRANS N-CH 30V 50A 6.4mOhm (500 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 50 A Rds On - Drain-Source Resistance: 6.4 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 136 W Mounting Style: SMD/SMT Package / Case: DPAK-2
CategoryIndustrial & Scientific
MPNIPD50N03S2L-06
Product groupBISS
Product typeBISS
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET OPTIMOS PWR-TRANS N-CH 30V 50A 6.4mOhm (1 piece)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 50 A Rds On - Drain-Source Resistance: 6.4 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 136 W Mounting Style: SMD/SMT Package / Case: DPAK-2
CategoryIndustrial & Scientific
MPNIPD50N03S2L-06
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)