Infineon Mosfet, N-Ch, 600V, 20.2A, To-247-3 - IPW60R190E6FKSA1
Gallery
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 13AC9097 | 1 | 231 | 1 | 1 @ $4.39, 10 @ $4.11, 25 @ $3.83, 50 @ $3.55, 100 @ $3.32, 480 @ $3.09 |
| JT25-IPW60R190E6 | 1 | 37800 | 1 | ||
| IPW60R190E6FKSA1 | 1 | 1 | 1 @ $5.65, 5 @ $4.99, 10 @ $4.49, 30 @ $4.19 | ||
| RS Delivers | 110-7443 | 1 | 1 | 1 @ $5.37 | |
| Digi-Key | 2523055 | 1 | 1 | 1 @ $5.91, 10 @ $5.31, 100 @ $4.35, 500 @ $3.72 | |
| Digi-Key | 13470732 | 1 | 1 | 125 @ $1.63 | |
| componentsense.com | IPW60R190E6 | 1 | 1 | ||
| Hotenda | H1818426 | 1 | 911 | 1 | 1 @ $3.08, 10 @ $2.77, 100 @ $2.27, 500 @ $1.93 |
| 1Source | IPW60R190E6FKSA1 | 1 | 1 | ||
| 1Source | IPW60R190E6 | 1 | 1 |
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MOSFET 600V CoolMOS E6 Power Transistor (1 piece)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 650 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 20.2 A Rds On - Drain-Source Resistance: 190 mOhms Configuration: Single Qg - Gate Charge: 63 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 151 W Mounting Style: Through Hole |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPW60R190E6 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET 600V CoolMOS E6 Power Transistor (10 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 650 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 20.2 A Rds On - Drain-Source Resistance: 190 mOhms Configuration: Single Qg - Gate Charge: 63 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 151 W Mounting Style: Through Hole |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPW60R190E6 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET 600V CoolMOS E6 Power Transistor (5 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 650 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 20.2 A Rds On - Drain-Source Resistance: 190 mOhms Configuration: Single Qg - Gate Charge: 63 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 151 W Mounting Style: Through Hole |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPW60R190E6 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET 600V CoolMOS E6 Power Transistor (50 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 650 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 20.2 A Rds On - Drain-Source Resistance: 190 mOhms Configuration: Single Qg - Gate Charge: 63 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 151 W Mounting Style: Through Hole |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPW60R190E6 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |